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-rw-r--r--3665/CH8/EX8.1/Ex8_1.sce16
-rw-r--r--3665/CH8/EX8.10/Ex8_10.sce16
-rw-r--r--3665/CH8/EX8.11/Ex8_11.sce15
-rw-r--r--3665/CH8/EX8.12/Ex8_12.sce26
-rw-r--r--3665/CH8/EX8.13/Ex8_13.sce24
-rw-r--r--3665/CH8/EX8.14/Ex8_14.sce16
-rw-r--r--3665/CH8/EX8.15/Ex8_15.sce15
-rw-r--r--3665/CH8/EX8.16/Ex8_16.sce15
-rw-r--r--3665/CH8/EX8.17/Ex8_17.sce16
-rw-r--r--3665/CH8/EX8.18/Ex8_18.sce16
-rw-r--r--3665/CH8/EX8.19/Ex8_19.sce16
-rw-r--r--3665/CH8/EX8.2/Ex8_2.sce18
-rw-r--r--3665/CH8/EX8.3/Ex8_3.sce19
-rw-r--r--3665/CH8/EX8.4/Ex8_4.sce16
-rw-r--r--3665/CH8/EX8.5/Ex8_5.sce17
-rw-r--r--3665/CH8/EX8.8/Ex8_8.sce25
-rw-r--r--3665/CH8/EX8.9/Ex8_9.sce19
17 files changed, 305 insertions, 0 deletions
diff --git a/3665/CH8/EX8.1/Ex8_1.sce b/3665/CH8/EX8.1/Ex8_1.sce
new file mode 100644
index 000000000..bbfca68f4
--- /dev/null
+++ b/3665/CH8/EX8.1/Ex8_1.sce
@@ -0,0 +1,16 @@
+clc//
+//
+//
+
+//Variable declaration
+ni=2.37*10^19; //carrier density(per m^3)
+mew_e=0.38; //electron mobility(m^2/Vs)
+mew_h=0.18; //hole mobility(m^2/Vs)
+e=1.6*10^-19;
+
+//Calculation
+sigma_i=ni*e*(mew_e+mew_h);
+rho=1/sigma_i; //resistivity(ohm m)
+
+//Result
+printf("\n resistivity is %0.3f ohm m",rho)
diff --git a/3665/CH8/EX8.10/Ex8_10.sce b/3665/CH8/EX8.10/Ex8_10.sce
new file mode 100644
index 000000000..65fc52b12
--- /dev/null
+++ b/3665/CH8/EX8.10/Ex8_10.sce
@@ -0,0 +1,16 @@
+clc//
+//
+//
+
+//Variable declaration
+k=1.38*10^-23; //boltzmann constant
+EF=0.18; //fermi shift(eV)
+E=1.2; //energy gap(eV)
+e=1.6*10^-19;
+r=5;
+
+//Calculation
+T=EF*e*4/(3*k*log(r)); //temperature(K)
+
+//Result
+printf("\n temperature is %0.0f K",T)
diff --git a/3665/CH8/EX8.11/Ex8_11.sce b/3665/CH8/EX8.11/Ex8_11.sce
new file mode 100644
index 000000000..dccdde45b
--- /dev/null
+++ b/3665/CH8/EX8.11/Ex8_11.sce
@@ -0,0 +1,15 @@
+clc//
+//
+//
+
+//Variable declaration
+Na=5*10^23; //number of atoms(atoms)
+Nd=3*10^23; //number of atoms(atoms)
+ni=2*10^16; //intrinsic charge carriers(per m^3)
+
+//Calculation
+p=2*(Na-Nd)/2; //hole concentration(per m^3)
+n=ni^2/p; //electron concentration(per m^3)
+
+//Result
+printf("\n electron concentration is %0.3f *10^9 per m^3",n/10^9)
diff --git a/3665/CH8/EX8.12/Ex8_12.sce b/3665/CH8/EX8.12/Ex8_12.sce
new file mode 100644
index 000000000..fd54d12ec
--- /dev/null
+++ b/3665/CH8/EX8.12/Ex8_12.sce
@@ -0,0 +1,26 @@
+clc//
+//
+//
+
+//Variable declaration
+ni=1.5*10^16; //carrier density(per m^3)
+mew_e=0.13; //electron mobility(m^2/Vs)
+mew_h=0.05; //hole mobility(m^2/Vs)
+e=1.6*10^-19;
+d=2.33*10^3; //density(kg/m^3)
+n=28.1;
+na=6.02*10^26; //number of atoms
+
+//Calculation
+sigma=ni*e*(mew_e+mew_h); //conductivity(ohm-1 m-1)
+Nd=d*na/(n*10^8);
+p=ni^2/Nd;
+sigma_ex1=Nd*e*mew_e; //conductivity(ohm-1 m-1)
+n=p;
+Na=Nd;
+sigma_ex2=Na*e*mew_h; //conductivity(ohm-1 m-1)
+
+//Result
+printf("\n conductivity is %0.3f *10^-3 ohm-1 m-1",sigma*10^3)
+printf("\n conductivity is %0.2f ohm-1 m-1",sigma_ex1)
+printf("\n conductivity is %0.2f ohm-1 m-1",sigma_ex2)
diff --git a/3665/CH8/EX8.13/Ex8_13.sce b/3665/CH8/EX8.13/Ex8_13.sce
new file mode 100644
index 000000000..2d8a8bb8d
--- /dev/null
+++ b/3665/CH8/EX8.13/Ex8_13.sce
@@ -0,0 +1,24 @@
+clc//
+//
+//
+
+//Variable declaration
+ni=1.5*10^16; //carrier density(per m^3)
+mew_e=0.135; //electron mobility(m^2/Vs)
+mew_h=0.048; //hole mobility(m^2/Vs)
+e=1.6*10^-19;
+Nd=10^23;
+T=300; //temperature(K)
+k=1.38*10^-23;
+
+//Calculation
+sigma=ni*e*(mew_e+mew_h); //conductivity(ohm-1 m-1)
+p=ni^2/Nd; //hole concentration(per m^3)
+sigma_ex=Nd*e*mew_e; //conductivity(ohm-1 m-1)
+x=3*k*T*log(mew_e/mew_h)/4;
+
+//Result
+printf("\n conductivity is %0.3f *10^-3 ohm-1 m-1",sigma*10^3)
+printf("\n hole concentration is %0.3f per m^3",p)
+printf("\n conductivity is %0.3f *10^3 ohm-1 m-1",sigma_ex/10^3)
+printf("\n position of fermi level is %0.2f eV",x/(1.6*10^-19))
diff --git a/3665/CH8/EX8.14/Ex8_14.sce b/3665/CH8/EX8.14/Ex8_14.sce
new file mode 100644
index 000000000..23141b898
--- /dev/null
+++ b/3665/CH8/EX8.14/Ex8_14.sce
@@ -0,0 +1,16 @@
+clc//
+//
+//
+
+//Variable declaration
+mew_e=0.19; //electron mobility(m^2/Vs)
+e=1.6*10^-19;
+T=300; //temperature(K)
+k=1.38*10^-23;
+
+//Calculation
+Dn=mew_e*k*T/e; //diffusion coefficient(m^2 s-1)
+
+//Result
+printf("\n diffusion coefficient is %0.3f *10^-4 m^2 s-1",Dn*10^4)
+printf("\n answer varies due to rounding off errors")
diff --git a/3665/CH8/EX8.15/Ex8_15.sce b/3665/CH8/EX8.15/Ex8_15.sce
new file mode 100644
index 000000000..4ebdcb9af
--- /dev/null
+++ b/3665/CH8/EX8.15/Ex8_15.sce
@@ -0,0 +1,15 @@
+clc//
+//
+//
+
+//Variable declaration
+RH=3.66*10^-4; //hall coefficient(m^3/coulomb)
+I=10^-2; //current(amp)
+B=0.5; //magnetic field(wb/m^2)
+t=1*10^-3; //thickness(m)
+
+//Calculation
+VH=RH*I*B*10^3/t; //hall voltage(mV)
+
+//Result
+printf("\n hall voltage is %0.3f mV",VH)
diff --git a/3665/CH8/EX8.16/Ex8_16.sce b/3665/CH8/EX8.16/Ex8_16.sce
new file mode 100644
index 000000000..e091c3455
--- /dev/null
+++ b/3665/CH8/EX8.16/Ex8_16.sce
@@ -0,0 +1,15 @@
+clc//
+//
+//
+
+//Variable declaration
+Vy=37*10^-6; //voltage(V)
+t=10^-3; //thickness(m)
+Bz=0.5; //magnetic field(wb/m^2)
+Ix=20*10^-3; //current(A)
+
+//Calculation
+RH=Vy*t/(Ix*Bz); //hall coefficient(m^3/coulomb)
+
+//Result
+printf("\n hall coefficient is %e C-1 m^3",RH)
diff --git a/3665/CH8/EX8.17/Ex8_17.sce b/3665/CH8/EX8.17/Ex8_17.sce
new file mode 100644
index 000000000..c98beffad
--- /dev/null
+++ b/3665/CH8/EX8.17/Ex8_17.sce
@@ -0,0 +1,16 @@
+clc//
+//
+//
+
+//Variable declaration
+RH=6.85*10^-5; //hall coefficient(m^3/coulomb)
+e=1.6*10^-19;
+sigma=250; //conductivity(m-1 ohm-1)
+
+//Calculation
+n=1/(RH*e); //density of charge carriers(m^3)
+mew=sigma/(n*e); //mobility of charge carriers(m^2/Vs)
+
+//Result
+printf("\n density of charge carriers is %0.3f *10^22 m^3",n/10^22)
+printf("\n mobility of charge carriers is %0.3f *10^-3 m^2 V-1 s-1",mew*10^3)
diff --git a/3665/CH8/EX8.18/Ex8_18.sce b/3665/CH8/EX8.18/Ex8_18.sce
new file mode 100644
index 000000000..8a236f068
--- /dev/null
+++ b/3665/CH8/EX8.18/Ex8_18.sce
@@ -0,0 +1,16 @@
+clc//
+//
+//
+
+//Variable declaration
+I=30; //current(A)
+B=1.75; //magnetic field(T)
+n=6.55*10^28; //electron concentration(/m^3)
+t=0.35*10^-2; //thickness(m)
+e=1.6*10^-19;
+
+//Calculation
+VH=I*B*10^6/(n*e*t); //hall voltage(micro V)
+
+//Result
+printf("\n hall voltage is %0.3f micro V",VH)
diff --git a/3665/CH8/EX8.19/Ex8_19.sce b/3665/CH8/EX8.19/Ex8_19.sce
new file mode 100644
index 000000000..be92da068
--- /dev/null
+++ b/3665/CH8/EX8.19/Ex8_19.sce
@@ -0,0 +1,16 @@
+clc//
+//
+//
+
+//Variable declaration
+RH=3.66*10^-4; //hall coefficient(m^3/coulomb)
+e=1.6*10^-19;
+Pn=8.93*10^-3; //resistivity(ohm m)
+
+//Calculation
+n=1/(RH*e); //density of charge carriers(per m^3)
+mew_e=RH/Pn; //mobility of charge carriers(m^2/Vs)
+
+//Result
+printf("\n density of charge carriers is %0.3f *10^22 per m^3",n/10^22)
+printf("\n mobility of charge carriers is %0.3f m^2 V-1 s-1",mew_e)
diff --git a/3665/CH8/EX8.2/Ex8_2.sce b/3665/CH8/EX8.2/Ex8_2.sce
new file mode 100644
index 000000000..0224a3aed
--- /dev/null
+++ b/3665/CH8/EX8.2/Ex8_2.sce
@@ -0,0 +1,18 @@
+clc//
+//
+//
+
+//Variable declaration
+Eg=1.12; //band gap(eV)
+T=300; //temperature(K)
+m0=1; //assume
+me=0.12*m0;
+mh=0.28*m0;
+k=1.38*10^-23; //boltzmann constant
+e=1.6*10^-19;
+
+//Calculation
+EF=(Eg/2)+(3*k*T*log(mh/me)/(4*e)); //position of fermi level(eV)
+
+//Result
+printf("\n position of fermi level is %0.3f eV",EF)
diff --git a/3665/CH8/EX8.3/Ex8_3.sce b/3665/CH8/EX8.3/Ex8_3.sce
new file mode 100644
index 000000000..b9c66e33c
--- /dev/null
+++ b/3665/CH8/EX8.3/Ex8_3.sce
@@ -0,0 +1,19 @@
+clc//
+//
+//
+
+//Variable declaration
+T=300; //temperature(K)
+k=1.38*10^-23; //boltzmann constant
+m=9.109*10^-31; //mass(kg)
+h=6.626*10^-34; //plancks constant
+Eg=0.7; //energy(eV)
+e=1.6*10^-19;
+
+//Calculation
+x=(2*%pi*m*k/h^2)^(3/2);
+y=exp(-Eg*e/(2*k*T));
+ni=2*x*(T^(3/2))*y; //concentration of intrinsic charge carriers(per m^3)
+
+//Result
+printf("\n concentration of intrinsic charge carriers is %0.2f *10^18 per m^3",ni/10^18)
diff --git a/3665/CH8/EX8.4/Ex8_4.sce b/3665/CH8/EX8.4/Ex8_4.sce
new file mode 100644
index 000000000..d4a8dd574
--- /dev/null
+++ b/3665/CH8/EX8.4/Ex8_4.sce
@@ -0,0 +1,16 @@
+clc//
+//
+//
+
+//Variable declaration
+ni=2.4*10^19; //carrier density(per m^3)
+mew_e=0.39; //electron mobility(m^2/Vs)
+mew_h=0.19; //hole mobility(m^2/Vs)
+e=1.6*10^-19;
+
+//Calculation
+sigma_i=ni*e*(mew_e+mew_h);
+rhoi=1/sigma_i; //resistivity(ohm m)
+
+//Result
+printf("\n resistivity is %0.3f ohm m",rhoi)
diff --git a/3665/CH8/EX8.5/Ex8_5.sce b/3665/CH8/EX8.5/Ex8_5.sce
new file mode 100644
index 000000000..c162bcc73
--- /dev/null
+++ b/3665/CH8/EX8.5/Ex8_5.sce
@@ -0,0 +1,17 @@
+clc//
+//
+//
+
+//Variable declaration
+ni=2.5*10^19; //carrier density(per m^3)
+mew_e=0.39; //electron mobility(m^2/Vs)
+mew_p=0.19; //hole mobility(m^2/Vs)
+e=1.6*10^-19;
+l=1*10^-2; //length(m)
+A=10^-3*10^-3; //area(m^2)
+
+//Calculation
+R=l/(ni*e*A*(mew_p+mew_e)); //resistance(ohm)
+
+//Result
+printf("\n resistance is %0.2f *10^3 ohm",R/10^3)
diff --git a/3665/CH8/EX8.8/Ex8_8.sce b/3665/CH8/EX8.8/Ex8_8.sce
new file mode 100644
index 000000000..dcf5b6f3d
--- /dev/null
+++ b/3665/CH8/EX8.8/Ex8_8.sce
@@ -0,0 +1,25 @@
+clc//
+//
+//
+
+//Variable declaration
+e=1.6*10^-19;
+mew_e=0.36; //electron mobility(m^2/Vs)
+mew_h=0.17; //hole mobility(m^2/Vs)
+rho=2.12; //resistivity(ohm m)
+T=300; //temperature(K)
+k=1.38*10^-23; //boltzmann constant
+m=9.109*10^-31; //mass(kg)
+h=6.626*10^-34; //plancks constant
+
+//Calculation
+sigma=1/rho;
+ni=sigma/(e*(mew_e+mew_h));
+C=2*((2*%pi*m*k/h^2)^(3/2));
+y=C*T^(3/2)/ni;
+z=log(y);
+Eg=2*k*T*z/(1.6*10^-19); //forbidden energy gap(eV)
+
+//Result
+printf("\n forbidden energy gap is %0.3f eV",Eg)
+printf("\n answer varies due to rounding off errors")
diff --git a/3665/CH8/EX8.9/Ex8_9.sce b/3665/CH8/EX8.9/Ex8_9.sce
new file mode 100644
index 000000000..31b7272a0
--- /dev/null
+++ b/3665/CH8/EX8.9/Ex8_9.sce
@@ -0,0 +1,19 @@
+clc//
+//
+//
+
+//Variable declaration
+x=0.6532;
+y=0.3010;
+T1=273+20; //temperature(K)
+T2=273+32; //temperature(K)
+k=8.616*10^-5;
+
+//Calculation
+dy=x-y;
+dx=(1/T1)-(1/T2);
+Eg=2*k*dy/dx; //energy band gap(eV)
+
+//Result
+printf("\n energy band gap is %0.3f eV",Eg)
+printf("\n answer varies due to rounding off errors")
generated by cgit (git 2.34.1) at 2024-12-23 01:55:46 +0000