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diff --git a/3655/CH4/EX4.3/Ex4_3.sce b/3655/CH4/EX4.3/Ex4_3.sce new file mode 100644 index 000000000..91749c382 --- /dev/null +++ b/3655/CH4/EX4.3/Ex4_3.sce @@ -0,0 +1,44 @@ +// Example 4.3 +// Computation for effective density of states in the conduction band and concentration of electrons in the semiconductor for case(A) and case(B)// +// Page no.90 + +clc; +clear; +close; + +//Given data ; +mn=1.4*9.1*10^-31; +k=8.62*10^-5; +T=300; +h=6.626*10^-34; +P=0.25;//p=EC-EF=0.25eV +T1=400; +kT=25.9*10^-3; + +//.....................................(A)...................................// + +//Calculation for effective density of states in the conduction band at T=300K// +NC=2*(((2*%pi*mn*k*T*(1.60*10^-19))/(h^2))^(3/2)); + +//Calculation for concentration of electrons in the semiconductor// +n=NC*exp(-(P)/(kT)); + +//.....................................(B)...................................// + +//Calculation for effective density of states in the conduction band at T=400K// +NC1=2*(((2*%pi*mn*k*T1*(1.60*10^-19))/(h^2))^(3/2)); + +//Calculation for concentration of electrons in the semiconductor// +n1=NC1*exp(-(P)/(kT)); + +//the concentration of electrons and effective density of states in a semiconductor are increased with the increase in the temperature// + +//Displaying the result in command window +printf('\n Effective density of states in the conduction band at T=300K = %0.2f x 10^25 m^-3',NC*10^-25); +printf('\n \n Concentration of electrons in the semiconductor at T=300K = %0.2f x 10^21 m^-3',n*10^-21); +printf('\n \n Effective density of states in the conduction band at T=400K = %0.2f x 10^25 m^-3',NC1*10^-25); +printf('\n \n Concentration of electrons in the semiconductor at T=400K = %0.1f x 10^21 m^-3',n1*10^-21); + + + +//Answers are varying due to round off error// |