diff options
Diffstat (limited to '3636/CH9/EX9.7/Ex9_7.sce')
-rw-r--r-- | 3636/CH9/EX9.7/Ex9_7.sce | 21 |
1 files changed, 21 insertions, 0 deletions
diff --git a/3636/CH9/EX9.7/Ex9_7.sce b/3636/CH9/EX9.7/Ex9_7.sce new file mode 100644 index 000000000..99c45d64a --- /dev/null +++ b/3636/CH9/EX9.7/Ex9_7.sce @@ -0,0 +1,21 @@ +clc;
+clear;
+epsilon_0=8.854*10^-14 //in F/cm
+epsilon_r=11.8 //in F/cm
+epsilon_i=3.9 //in F/cm
+d=80*10^-8 //gate oxide thickness in cm
+phi_ms=-0.15 //work-function difference in V
+Qi=10^11*1.6*10^-19 //fixed oxide charge in C/cm^2
+Nd=5*10^17 //in cm^-3
+ni=1.5*10^10 //in cm^-3
+e=1.6*10^-19 //in J
+const=0.0259 //value for kT/e in V
+
+//Calculation
+phi_F=const*log(Nd/ni) //in V
+Wm=2*sqrt((epsilon_0*epsilon_r*abs(phi_F))/(e*Nd)) //in cm
+Qd=e*Nd*Wm //depletion charges in C
+Ci=(epsilon_0*epsilon_i)/d //in F/cm^2
+VT=phi_ms-(Qi/Ci)-(Qd/Ci)-(2*phi_F)
+
+mprintf("Voltage of n-channel= %1.2f V",VT)
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