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diff --git a/3636/CH9/EX9.6/Ex9_6.sce b/3636/CH9/EX9.6/Ex9_6.sce
new file mode 100644
index 000000000..a2806ad39
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+++ b/3636/CH9/EX9.6/Ex9_6.sce
@@ -0,0 +1,28 @@
+clc;
+clear;
+epsilon_0=8.854*10^-14 //in F/cm
+epsilon_r=11.8 //in F/cm
+epsilon_i=3.9 //in F/cm
+d=100*10^-8 //gate oxide thickness in cm
+phi_ms=-1.5 //in V
+Qi=5*10^10*1.6*10^-19 //fixed oxide charge in C/cm^2
+Na=10^18 //in cm^-3
+ni=1.5*10^10 //in cm^-3
+e=1.6*10^-19 //in J
+VB=2.5 //in V
+const=0.0259 //value for kT/e in V
+
+//Calculation
+Ci=(epsilon_0*epsilon_i)/d //in F/cm^2
+VFB=phi_ms-(Qi/Ci) //in V
+phi_F=const*log(Na/ni) //in V
+W=sqrt((2*epsilon_0*epsilon_r*(2*phi_F))/(e*Na)) //in cm
+Qd=-e*Na*W //in C
+VT=VFB+(2*phi_F)-(Qd/Ci) //in V
+Wm=sqrt((2*epsilon_0*epsilon_r*((2*phi_F)+VB))/(e*Na)) //in cm
+Qd1=-e*Na*Wm //in C
+VT1=VFB+(2*phi_F)-(Qd1/Ci) //in V
+
+mprintf("Voltage of n-channel Si(1)= %1.2f V\n",VT)
+mprintf("Voltage of n-channel Si(2)= %1.3f V",VT1) //The answers vary due to round off error
+