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+// Exa 2.9
+format('v',7);
+clc;
+clear;
+close;
+// Given data 
+R_D= 20;// in kΩ
+R_D= R_D*10^3;// in Ω
+R1= 30;// in kΩ
+R1= R1*10^3;// in Ω
+R2= 20;// in kΩ
+R2= R2*10^3;// in Ω
+V_DD= 5;// in V
+Vtn= 1;// in V
+Kn= 0.1;// in mA/V^2
+Kn=Kn*10^-3;// in A/V^2
+V_GS= R2*V_DD/(R1+R2);// in V
+// I_D= 1/2*µnCox*W/L*(V_GS-Vtm)^2 
+I_D = Kn*(V_GS-Vtn)^2  ;// in mA (As Kn= 1/2*µnCox*W/L)
+V_DS= V_DD-I_D*R_D;// in V
+I_D= I_D*10^3;// in mA
+disp(V_GS,"The value of V_GS in volt is : ")
+disp(I_D,"The value of I_D in mA is : ")
+disp(V_DS,"The value of V_DS in volt is : ")
+disp("Since V_DS = 3V > V_DS(sat) = V_GS-Vtn = 2 - 1V, the transistor is indeed biased in the saturation region")
+
+