diff options
Diffstat (limited to '3428/CH19/EX12.19.4/Ex12_19_4.sce')
-rw-r--r-- | 3428/CH19/EX12.19.4/Ex12_19_4.sce | 12 |
1 files changed, 6 insertions, 6 deletions
diff --git a/3428/CH19/EX12.19.4/Ex12_19_4.sce b/3428/CH19/EX12.19.4/Ex12_19_4.sce index 499084179..478802d9f 100644 --- a/3428/CH19/EX12.19.4/Ex12_19_4.sce +++ b/3428/CH19/EX12.19.4/Ex12_19_4.sce @@ -1,12 +1,12 @@ //Section-12,Example-4,Page no.-SS.59
//To calculate concentration of holes and electrons in an n-type silicon.
clc;
-C_n=0.1
-e=1.6*10^-19
-u_e=1300
-N_D=C_n/(e*u_e)
-n=N_D
-n_i=1.5*10^10
+C_n=0.1 //(ohm-cm)^-1
+e=1.6*10^-19 //Coulombs
+u_e=1300 //cm^2/Vsec
+N_D=C_n/(e*u_e) //atoms/cm^3
+n=N_D //electrons/cm^3
+n_i=1.5*10^10 //per cm^3
disp(n,'Concentration of electrons(per cm^3)')
p=((n_i)^2)/n
disp(p,'Concentration of holes(per cm^3)')
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