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+// chapter 9
+// example 9.10
+// Find the electron and hole concentrations and the resistivity
+// page 276
+clear;
+clc;
+//given
+rho=2300; // in ohm-m (resistivity of pure silicon)
+ue=0.135; // in m^2/V-s (mobility of electron)
+uh=0.048; // in m^2/V-s (mobility of electron)
+Nd=1E19;// in /m^3 (doping concentration)
+e=1.6E-19;// in C (charge of electron)
+//calculate
+// since sigma=ni*e*(ue+uh) and sigma=1/rho
+// therefore ni=1/(rho*e*(ue+uh))
+ni=1/(rho*e*(ue+uh)); // calculation of intrinsic concentration
+ne=Nd; // calculation of electron concentration
+printf('\nThe electron concentration is \tne=%1.1E /m^3',ne);
+nh=ni^2/Nd; // calculation of hole concentration
+printf('\nThe hole concentration is \tnh=%1.1E /m^3',nh);
+sigma=ne*ue*e+nh*uh*e; // calculation of conductivity
+rho=1/sigma; // calculation of resistivity
+printf('\nThe resistivity of the specimen  is \t%.2f  ohm-m',rho);
+
+