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+// Chapter 3_The Semiconductor in Equilibrium
+//Caption_Charge Neutrality
+//Ex_12//page 116
+T=550 //temperature in kelvin
+Nc=2.8*(10^19)
+Nv=1.04*(10^19)
+Eg=1.12 // band gap energy in eV
+ni=(Nc*Nv*(T/300)^3*exp(-Eg/0.0259 *(300/T)))^0.5
+//no=1.05*Nd since the intrinsic carrier concentration to contribute no more than 5 percent of the total electron concentration .
+Nd=(ni^2/(1.05-1))^0.5
+printf('The required impurity doping concentration is %fd per cm cube',Nd)