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+// Chapter 12_The junction field effect transistor
+//Caption_The MESFET-Channel length modulation
+//Ex_8//page 573
+Nd=3*10^15
+eps=8.85*10^-14*11.7
+L=10
+ID1=4
+VDSsat=0  //assume
+VDS1=VDSsat+2
+VDS2=VDSsat+2.5
+
+delL2=10^4*(2*eps*(VDS2-VDSsat)/(e*Nd))^0.5   //change in length
+delL1=10^4*(2*eps*(VDS1-VDSsat)/(e*Nd))^0.5   //change in length
+//drain currents are
+ID22=ID1*(L/(L-0.5*delL2))
+ID11=ID1*(L/(L-0.5*delL1))
+rds=(VDS2-VDS1)/(ID22-ID11)
+printf('The small signal output resistance at the drain terminal due to channel length modulation effects is %1.1f kohm',rds)
+