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Diffstat (limited to '284/CH12/EX12.1')
| -rwxr-xr-x | 284/CH12/EX12.1/ex1.sce | 14 |
1 files changed, 14 insertions, 0 deletions
diff --git a/284/CH12/EX12.1/ex1.sce b/284/CH12/EX12.1/ex1.sce new file mode 100755 index 000000000..c2d4c11d1 --- /dev/null +++ b/284/CH12/EX12.1/ex1.sce @@ -0,0 +1,14 @@ +// Chapter 12_The junction field effect transistor
+//Caption_Device characteristics
+//Ex_1//page 557
+T=300
+Na=10^18
+e=1.6*10^-19
+eps=8.85*10^-14*11.7
+ni=1.5*10^10
+Nd=10^16 //donor concentration
+a=0.75*10^-4 //metallurgical channel thichness
+Vpo=e*a^2*Nd/(2*eps) //internal pinch off voltage
+Vbi=0.0259*log(Na*Nd/ni^2) //built in potential barrier
+Vp=Vbi-Vpo //pinch off voltage
+printf('The pinch off voltage of this n-channel JFET is %1.2fV',Vp)
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