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Diffstat (limited to '284/CH12/EX12.10')
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1 files changed, 15 insertions, 0 deletions
diff --git a/284/CH12/EX12.10/ex10.sce b/284/CH12/EX12.10/ex10.sce new file mode 100755 index 000000000..0a96e0af7 --- /dev/null +++ b/284/CH12/EX12.10/ex10.sce @@ -0,0 +1,15 @@ +// Chapter 12_The junction field effect transistor
+//Caption_High electron mobility transistor
+//Ex_10//page 585
+Nd=10^18
+d=20*10^-8
+dd=500*10^-8 //thickness
+phi_B=0.85
+q=1.6*10^-19
+VG=0
+epsn=12.2 //relative dielectric constant
+Vp2=q*Nd*dd^2/(2*epsn*8.85*10^-14) //a parameter
+x=0.22 //x=del Ec/q
+Voff=phi_B-x-Vp2 //threshold voltage
+ns=(VG-Voff)*epsn*8.85*10^-14/(q*(dd+d+80*10^-8))
+printf('The two dimensional electron concentration is %1.2f cm^-2',ns)
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