diff options
Diffstat (limited to '2792')
| -rwxr-xr-x | 2792/CH3/EX3.16/Ex3_16.sce | 50 | ||||
| -rwxr-xr-x | 2792/CH5/EX5.10/Ex5_10.sce | 49 | ||||
| -rwxr-xr-x | 2792/CH8/EX8.7/Ex8_7.sce | 54 | ||||
| -rwxr-xr-x | 2792/CH9/EX9.8/Ex9_8.sce | 76 |
4 files changed, 113 insertions, 116 deletions
diff --git a/2792/CH3/EX3.16/Ex3_16.sce b/2792/CH3/EX3.16/Ex3_16.sce index f52687136..7cd3bbe91 100755 --- a/2792/CH3/EX3.16/Ex3_16.sce +++ b/2792/CH3/EX3.16/Ex3_16.sce @@ -1,27 +1,23 @@ -clc
-e = 1.6*10^-19
-disp("e= "+string(e)+"C")//initializing value of charge of electron
-KbT = 0.026
-disp("kbT = "+string(kbT)+"V") //initializing value of kbT at 300K
-sigma=10
-disp("sigma = "+string(sigma)+"ohmcm^-1") //initializing value of conductivity
-mu_n=1100
-disp("mu_n = "+string(mu_n)+"cm^2(Vs)^-1") //initializing value of mobility of electrons
-mu_p=400
-disp("mu_p = "+string(mu_p)+"cm^2(Vs)^-1") //initializing value of mobility of holes
-Nd = 10^17
-disp("Nd= "+string(Nd)+"cm^-3")//initializing value of doping
-n = sigma/(e*mu_n)
-disp("The carrier concentration in n type material is n = sigma/(e*mu_n)= "+string(n)+"cm^-3")//calculation
-// the answer in textbook is given in %
-//The excess drops by 50% once light is off using this fact in below equation
-T = -1/log(.5)
-disp("The recombination time is T = -1/log(.5)= "+string(T)+"micro-sec")//calculation
-Dp = mu_p*kbT
-disp("The diffusion constant is Dp = mu_p*kbT = "+string(Dp)+"cm^2/s")//calculation
-Lp = sqrt(Dp*T*10^-6)
-disp("The diffusion length is Lp = sqrt(Dp*T*10^-6) = "+string(Lp)+"m")//calculation
-
-
-
-
+clc +e = 1.6*10^-19 +disp("e= "+string(e)+"C")//initializing value of charge of electron +kBT = 0.026 +disp("kbT = "+string(kbT)+"V") //initializing value of kbT at 300K +sigma=10 +disp("sigma = "+string(sigma)+"ohmcm^-1") //initializing value of conductivity +mu_n=1100 +disp("mu_n = "+string(mu_n)+"cm^2(Vs)^-1") //initializing value of mobility of electrons +mu_p=400 +disp("mu_p = "+string(mu_p)+"cm^2(Vs)^-1") //initializing value of mobility of holes +Nd = 10^17 +disp("Nd= "+string(Nd)+"cm^-3")//initializing value of doping +n = sigma/(e*mu_n) +disp("The carrier concentration in n type material is n = sigma/(e*mu_n)= "+string(n)+"cm^-3")//calculation +// the answer in textbook is given in % +//The excess drops by 50% once light is off using this fact in below equation +T = -1/log(.5) +disp("The recombination time is T = -1/log(.5)= "+string(T)+"micro-sec")//calculation +Dp = mu_p*kbT +disp("The diffusion constant is Dp = mu_p*kbT = "+string(Dp)+"cm^2/s")//calculation +Lp = sqrt(Dp*T*10^-6) +disp("The diffusion length is Lp = sqrt(Dp*T*10^-6) = "+string(Lp)+"m")//calculation
\ No newline at end of file diff --git a/2792/CH5/EX5.10/Ex5_10.sce b/2792/CH5/EX5.10/Ex5_10.sce index dd07dd0bb..55de01041 100755 --- a/2792/CH5/EX5.10/Ex5_10.sce +++ b/2792/CH5/EX5.10/Ex5_10.sce @@ -1,24 +1,25 @@ -clc
-e = 1.6*10^-19
-disp("e= "+string(e)+"C")//initializing value of charge of electron
-A= 10^-7
-disp("A= "+string(A)+"m^2") //initializing value of diode area
-ni = 1.5*10^16
-disp("ni= "+string(ni)+"m^-3")//initializing value of intrinsic carrier concentration
-T = 10^-6
-disp("T= "+string(T)+"s")//inializing value of carrier lifetime
-// from example 5.2 we get the value of zero bias depletion widths
-W = 0.32*10^-6
-disp("The zero bias depletion widths is ,W "+string(W)+"m")
-Io_GR = (e*A*W*ni)/(2*T)
-disp("The prefactor of the is ,generation recombination currentIo_GR = (e*A*W*ni)/(2*T)= "+string(Io_GR)+"A")//calculation
-//let V = .2 V
-V = .2
-I_GR = Io_GR*(exp(V/(2*kbT))-1)
-disp("The diode current is ,I_GR = Io_GR*(exp(V/(2*kbT))-1)= "+string(I_GR)+"A")//calculation
-//let V = 0.6 V
-V = 0.6
-I_GR = Io_GR*(exp(V/(2*kbT))-1)
-disp("The diode current is ,I_GR = Io_GR*(exp(V/(2*kbT))-1)= "+string(I_GR)+"A")//calculation
-// The generation-recombination prefactor is much larger than prefactor due to diffusion term
-//In forward bias the diffusion current is initially much smaller than the generation recombination term but at high forward bias diffusion current will start to dominate
+clc +e = 1.6*10^-19; +kbT = 0.026; +disp("e= "+string(e)+"C")//initializing value of charge of electron +A= 10^-7 +disp("A= "+string(A)+"m^2") //initializing value of diode area +ni = 1.5*10^16 +disp("ni= "+string(ni)+"m^-3")//initializing value of intrinsic carrier concentration +T = 10^-6 +disp("T= "+string(T)+"s")//inializing value of carrier lifetime +// from example 5.2 we get the value of zero bias depletion widths +W = 0.32*10^-6 +disp("The zero bias depletion widths is ,W "+string(W)+"m") +Io_GR = (e*A*W*ni)/(2*T) +disp("The prefactor of the is ,generation recombination currentIo_GR = (e*A*W*ni)/(2*T)= "+string(Io_GR)+"A")//calculation +//let V = .2 V +V = .2 +I_GR = Io_GR*(exp(V/(2*kbT))-1) +disp("The diode current is ,I_GR = Io_GR*(exp(V/(2*kbT))-1)= "+string(I_GR)+"A")//calculation +//let V = 0.6 V +V = 0.6 +I_GR = Io_GR*(exp(V/(2*kbT))-1) +disp("The diode current is ,I_GR = Io_GR*(exp(V/(2*kbT))-1)= "+string(I_GR)+"A")//calculation +// The generation-recombination prefactor is much larger than prefactor due to diffusion term +//In forward bias the diffusion current is initially much smaller than the generation recombination term but at high forward bias diffusion current will start to dominate
\ No newline at end of file diff --git a/2792/CH8/EX8.7/Ex8_7.sce b/2792/CH8/EX8.7/Ex8_7.sce index e023d6cec..01198756e 100755 --- a/2792/CH8/EX8.7/Ex8_7.sce +++ b/2792/CH8/EX8.7/Ex8_7.sce @@ -1,27 +1,27 @@ -clc
-Nd = 5*10^16
-disp("Nd = "+string(Nd)+"cm^-3") //initializing value of channel doping
-L = 2*10^-4
-disp("L = "+string(L)+"cm") //initializing value of channel length
-apsilen = 13.2*8.85*10^-14
-disp("apsilen = "+string(apsilen)) //initializing value of relative permitivity
-VDS1 = 1.0
-disp("VDS1 = "+string(VDS1)+"V") //initializing value of drain bias voltage 1
-VDS2 = 1.5
-disp("VDS2 = "+string(VDS2)+"V") //initializing value of drain bias voltage 2
-VGS1 = 0
-disp("VGS1 = "+string(VGS1)+"V") //initializing value of gate bias voltage 1
-ID=4.03
-disp("ID(sat) = "+string(ID)+"mA") //initializing value of saturated current
-dL1 = sqrt((2*apsilen*VDS1)/(e*Nd))
-disp("The change in channel length is ,dL (VDS(sat)+1 V) = sqrt((2*apsilen*VDS1)/(e*Nd))= "+string(dL1)+"cm")//calculation
-dL2 = sqrt((2*apsilen*VDS2)/(e*Nd))
-disp("The change in channel length is ,dL (VDS(sat)+1.5 V) = sqrt((2*apsilen*VDS2)/(e*Nd))= "+string(dL2)+"cm")//calculation
-ID1 = ID*(1+(dL1/(2*L)))
-disp("The current at the bias is ,ID1(VDS(sat)+1 V) = ID*(1+(dL1/(2*L)))= "+string(ID1)+"mA")//calculation
-ID2 = ID*(1+(dL2/(2*L)))
-disp("The current at the bias is ,ID2(VDS(sat)+1.5 V) = ID*(1+(dL2/(2*L)))= "+string(ID2)+"mA")//calculation
-rDS = (VDS2-VDS1)/((ID2-ID1)*10^-3)
-disp("The output resistance of source drain channel is ,rDS = (VDS2-VDS1)/(ID2-ID1)= "+string(rDS)+"ohm")//calculation
-// Note : due to different precisions taken by me and the author ... my answer differ
-
+clc +Nd = 5*10^16; +e = 1.6*10^-19; +disp("Nd = "+string(Nd)+"cm^-3") //initializing value of channel doping +L = 2*10^-4 +disp("L = "+string(L)+"cm") //initializing value of channel length +apsilen = 13.2*8.85*10^-14 +disp("apsilen = "+string(apsilen)) //initializing value of relative permitivity +VDS1 = 1.0 +disp("VDS1 = "+string(VDS1)+"V") //initializing value of drain bias voltage 1 +VDS2 = 1.5 +disp("VDS2 = "+string(VDS2)+"V") //initializing value of drain bias voltage 2 +VGS1 = 0 +disp("VGS1 = "+string(VGS1)+"V") //initializing value of gate bias voltage 1 +ID=4.03 +disp("ID(sat) = "+string(ID)+"mA") //initializing value of saturated current +dL1 = sqrt((2*apsilen*VDS1)/(e*Nd)) +disp("The change in channel length is ,dL (VDS(sat)+1 V) = sqrt((2*apsilen*VDS1)/(e*Nd))= "+string(dL1)+"cm")//calculation +dL2 = sqrt((2*apsilen*VDS2)/(e*Nd)) +disp("The change in channel length is ,dL (VDS(sat)+1.5 V) = sqrt((2*apsilen*VDS2)/(e*Nd))= "+string(dL2)+"cm")//calculation +ID1 = ID*(1+(dL1/(2*L))) +disp("The current at the bias is ,ID1(VDS(sat)+1 V) = ID*(1+(dL1/(2*L)))= "+string(ID1)+"mA")//calculation +ID2 = ID*(1+(dL2/(2*L))) +disp("The current at the bias is ,ID2(VDS(sat)+1.5 V) = ID*(1+(dL2/(2*L)))= "+string(ID2)+"mA")//calculation +rDS = (VDS2-VDS1)/((ID2-ID1)*10^-3) +disp("The output resistance of source drain channel is ,rDS = (VDS2-VDS1)/(ID2-ID1)= "+string(rDS)+"ohm")//calculation +// Note : due to different precisions taken by me and the author ... my answer differ
\ No newline at end of file diff --git a/2792/CH9/EX9.8/Ex9_8.sce b/2792/CH9/EX9.8/Ex9_8.sce index 7ba1a45b9..ef1c2284e 100755 --- a/2792/CH9/EX9.8/Ex9_8.sce +++ b/2792/CH9/EX9.8/Ex9_8.sce @@ -1,38 +1,38 @@ -clc
-kbT = 0.026
-disp("kbT = "+string(kbT)+"eV") //initializing value of kbT at 300K
-Z = 10*10^-4
-disp("Z = "+string(Z)+"cm") //initializing value of channel width
-L = 1*10^-4
-disp("L = "+string(L)+"cm") //initializing value of channel length
-mu_n=700
-disp("mu_n = "+string(mu_n)+"cm^2(Vs)^-1") //initializing value of channel mobility
-apsilen = 11.9*8.85*10^-14
-disp("apsilen = "+string(apsilen)+"F/cm") //initializing value of relative permitivity
-e = 1.6*10^-19
-disp("e= "+string(e)+"C")//initializing value of charge of electron
-Na=4*10^14
-disp("Na = "+string(Na)+"cm^-3") //initializing value of doped carrier concentration
-ni = 1.5*10^10
-disp("ni= "+string(ni)+"cm^-3")//initializing value of intrinsic carrier concentration
-apsilen_ox = 3.9*8.85*10^-14
-disp("apsilen_ox= "+string(apsilen_ox))//initializing value of relative permitivity of oxide
-dox = 200*10^-8
-disp("dox= "+string(dox)+"cm")//initializing value of thickness of oxide
-VGS = 5
-disp("VGS= "+string(VGS)+"V")//initializing value of gate voltage
-Qs = sqrt(4*apsilen*(-phi_F)*e*Na)
-disp("The maximum depletion width is ,Qs = sqrt(4*apsilen*(-phi_F)*e*Na)= "+string(Qs)+" cm^-2")//calculation
-phi_F= (-kbT*log(Na/ni))
-disp("The potential phi_F= (-kbT*log(Na/ni))= "+string(phi_F)+" V")//calculation
-Cox = apsilen_ox/dox
-disp("The oxide capicitance per unit area is ,Cox = apsilen_ox/dox= "+string(Cox)+" cm^-1")//calculation
-Vs = -(2*phi_F)
-disp("The surface potential is ,Vs = -(2*QF)= "+string(Vs)+" V")//calculation
-VT = Vs+((Qs/Cox))
-disp(" The threshold voltage is ,VT = Vs+((Qs/Cox)) = "+string(VT)+" V")//calculation
-VDS = VGS-VT
-disp("The saturation voltage is ,VDS = VGS-VT= "+string(VDS)+" V")//calculation
-ID = (Z*mu_n*Cox*(VDS)^2)/(2*L)
-disp("The saturation current is ,ID = (Z*mu_n*Cox*(VDS)^2)/(2*L)= "+string(ID)+" A")//calculation
-// Note : due to different precisions taken by me and the author ... my answer differ
+clc +kbT = 0.026 +disp("kbT = "+string(kbT)+"eV") //initializing value of kbT at 300K +Z = 10*10^-4 +disp("Z = "+string(Z)+"cm") //initializing value of channel width +L = 1*10^-4 +disp("L = "+string(L)+"cm") //initializing value of channel length +mu_n=700 +disp("mu_n = "+string(mu_n)+"cm^2(Vs)^-1") //initializing value of channel mobility +apsilen = 11.9*8.85*10^-14 +disp("apsilen = "+string(apsilen)+"F/cm") //initializing value of relative permitivity +e = 1.6*10^-19 +disp("e= "+string(e)+"C")//initializing value of charge of electron +Na=4*10^14 +disp("Na = "+string(Na)+"cm^-3") //initializing value of doped carrier concentration +ni = 1.5*10^10 +disp("ni= "+string(ni)+"cm^-3")//initializing value of intrinsic carrier concentration +apsilen_ox = 3.9*8.85*10^-14 +disp("apsilen_ox= "+string(apsilen_ox))//initializing value of relative permitivity of oxide +dox = 200*10^-8 +disp("dox= "+string(dox)+"cm")//initializing value of thickness of oxide +VGS = 5; +phi_F= (-kbT*log(Na/ni)); +disp("VGS= "+string(VGS)+"V")//initializing value of gate voltage +Qs = sqrt(4*apsilen*(-phi_F)*e*Na) +disp("The maximum depletion width is ,Qs = sqrt(4*apsilen*(-phi_F)*e*Na)= "+string(Qs)+" cm^-2")//calculation +disp("The potential phi_F= (-kbT*log(Na/ni))= "+string(phi_F)+" V")//calculation +Cox = apsilen_ox/dox +disp("The oxide capicitance per unit area is ,Cox = apsilen_ox/dox= "+string(Cox)+" cm^-1")//calculation +Vs = -(2*phi_F) +disp("The surface potential is ,Vs = -(2*QF)= "+string(Vs)+" V")//calculation +VT = Vs+((Qs/Cox)) +disp(" The threshold voltage is ,VT = Vs+((Qs/Cox)) = "+string(VT)+" V")//calculation +VDS = VGS-VT +disp("The saturation voltage is ,VDS = VGS-VT= "+string(VDS)+" V")//calculation +ID = (Z*mu_n*Cox*(VDS)^2)/(2*L) +disp("The saturation current is ,ID = (Z*mu_n*Cox*(VDS)^2)/(2*L)= "+string(ID)+" A")//calculation +// Note : due to different precisions taken by me and the author ... my answer differ
\ No newline at end of file |