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diff --git a/2534/CH4/EX4.1/Ex4_1.sce b/2534/CH4/EX4.1/Ex4_1.sce
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+//Ex4_1
+clc
+Irs = 0.2*10^-6
+Vf = 0.1
+VT = 26*10^-3
+eta = 1//for germanium
+I = Irs*(exp(Vf/eta/VT)-1)
+disp("Irs = "+string(Irs)+"A")//reverse saturation current
+disp("Vf = "+string(Vf)+"V")//applied voltage
+disp("VT = "+string(VT)+"V")//voltage at room temperature
+disp("eta = "+string(eta))
+disp("I = Irs*(exp(Vf/eta/VT)-1)")//current at room temperature
+disp("I = "+string(I)+"A")
+
+//current in silicon:
+eta = 2//for silicon
+disp("eta = "+string(eta))
+I = Irs*(exp(Vf/eta/VT)-1)
+disp("I = "+string(I)+"A")
+
+
+
+
+// note: incomplete solution in textbook for above question.