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-rwxr-xr-x181/CH8/EX8.1/example8_1.sce27
-rwxr-xr-x181/CH8/EX8.1/example8_1.txt3
-rwxr-xr-x181/CH8/EX8.10/example8_10.sce37
-rwxr-xr-x181/CH8/EX8.10/example8_10.txt4
-rwxr-xr-x181/CH8/EX8.11/example8_11.sce23
-rwxr-xr-x181/CH8/EX8.11/example8_11.txt1
-rwxr-xr-x181/CH8/EX8.2/example8_2.sce30
-rwxr-xr-x181/CH8/EX8.2/example8_2.txt3
-rwxr-xr-x181/CH8/EX8.3/example8_3.sce21
-rwxr-xr-x181/CH8/EX8.3/example8_3.txt1
-rwxr-xr-x181/CH8/EX8.4/example8_4.sce28
-rwxr-xr-x181/CH8/EX8.4/example8_4.txt4
-rwxr-xr-x181/CH8/EX8.5/example8_5.sce22
-rwxr-xr-x181/CH8/EX8.5/example8_5.txt1
-rwxr-xr-x181/CH8/EX8.6/example8_6.sce20
-rwxr-xr-x181/CH8/EX8.6/example8_6.txt2
-rwxr-xr-x181/CH8/EX8.7/example8_7.sce23
-rwxr-xr-x181/CH8/EX8.7/example8_7.txt3
-rwxr-xr-x181/CH8/EX8.8/example8_8.sce29
-rwxr-xr-x181/CH8/EX8.8/example8_8.txt5
20 files changed, 287 insertions, 0 deletions
diff --git a/181/CH8/EX8.1/example8_1.sce b/181/CH8/EX8.1/example8_1.sce
new file mode 100755
index 000000000..ed7092e22
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@@ -0,0 +1,27 @@
+// Calculate the Gate Source Resistance
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 8-1 in page 376
+
+clear; clc; close;
+
+// Given Data
+P=0.5; // Value of Allowable Gate Power Dissipation in watt
+Es=14; // Trigger Source Voltage in V
+slope=130; // Slope of Gate-Cathode Characteristic line
+
+// Calculations
+Ig=sqrt(P/slope);
+Vg=slope*Ig;
+Rs=(Es-Vg)/Ig;
+
+printf("(a)The value of Gate Resistance for the Circuit is %0.2e ohm \n",Rs);
+printf("(b)The value of the Gate Voltage is %0.2e V \n",Vg);
+printf("(c)The value of the Gate Current is %0.2e A \n",Ig);
+
+// Results
+// (a) The value of Gate Resistance for the Circuit is 95.3 ohm
+// (b) The value of the Gate Voltage is 8.06 V
+// (c) The value of the Gate Current is 62 mA \ No newline at end of file
diff --git a/181/CH8/EX8.1/example8_1.txt b/181/CH8/EX8.1/example8_1.txt
new file mode 100755
index 000000000..322c21343
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+(a)The value of Gate Resistance for the Circuit is 9.57e+001 ohm
+(b)The value of the Gate Voltage is 8.06e+000 V
+(c)The value of the Gate Current is 6.20e-002 A \ No newline at end of file
diff --git a/181/CH8/EX8.10/example8_10.sce b/181/CH8/EX8.10/example8_10.sce
new file mode 100755
index 000000000..7cc002d95
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+// Design of Triggering Circuit for a UJT
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 8-10 in page 390
+
+clear; clc; close;
+
+// Given Data
+Vs=30; // DC source voltage in V
+eta=0.51; // Intrinsic stand off ratio
+Ip=10*10^-6; // Peak Emitter current of UJT in mu-A
+Vv=3.5; // Valley voltage in V
+Iv=10*10^-3; // Valley current in A
+f=60; // Source frequency in Hz
+tg=50*10^-6; // width of triggering pulse in seconds
+C=0.5*10^-6; // Assumption for circuit Capacitance in mu-F
+Vd=0.5; // Fixed value of Vb in V
+
+// Calculations
+Vp=(eta*Vs)+Vd;
+Rlow=(Vs-Vp)/Ip;
+Rup=(Vs-Vv)/Iv;
+tou=1/f;
+R=(tou/C)*(1/log(1/(1-eta)));
+Rb1=tg/C;
+Rb2=10^4/(eta*Vs);
+
+printf("(a)The value of Base-1 Resistance of UJT is %0.2f ohm \n",Rb1);
+printf("(b)The value of Base-2 Resistance of UJT is %0.2f ohm \n",Rb2);
+printf("(c)Circuit resistance of the arrangement is %0.2e ohm \n",R);
+
+// Results
+// (a) The value of Base-1 Resistance of UJT is 100 ohm
+// (b) The value of Base-2 Resistance of UJT is 654 ohm
+// (c) Circuit resistance of the arrangement is 46.7 K-ohm \ No newline at end of file
diff --git a/181/CH8/EX8.10/example8_10.txt b/181/CH8/EX8.10/example8_10.txt
new file mode 100755
index 000000000..8fa8dc18c
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+++ b/181/CH8/EX8.10/example8_10.txt
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+(a)The value of Base-1 Resistance of UJT is 100.00 ohm
+(b)The value of Base-2 Resistance of UJT is 653.59 ohm
+(c)Circuit resistance of the arrangement is 4.67e+004 ohm
+ \ No newline at end of file
diff --git a/181/CH8/EX8.11/example8_11.sce b/181/CH8/EX8.11/example8_11.sce
new file mode 100755
index 000000000..30b2ccf70
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+++ b/181/CH8/EX8.11/example8_11.sce
@@ -0,0 +1,23 @@
+// To determine Emitter source voltage of UJT
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 8-11 in page 391
+
+clear; clc; close;
+
+// Given Data
+Re=1*10^3; // Emitter Resistance of UJT in ohm
+Iv=5*10^-3; // Valley current of UJT in A
+Vv=2; // Valley voltage of UJT in V
+
+// Calculations
+Ve=Vv;
+Ie=Iv;
+Vee=(Ie*Re)+Ve;
+
+printf("The value of Emitter source voltage of UJT for turn-off is %0.2f V",Vee);
+
+// Results
+// The value of Emitter source voltage of UJT for turn-off is 7 V \ No newline at end of file
diff --git a/181/CH8/EX8.11/example8_11.txt b/181/CH8/EX8.11/example8_11.txt
new file mode 100755
index 000000000..06346a0b9
--- /dev/null
+++ b/181/CH8/EX8.11/example8_11.txt
@@ -0,0 +1 @@
+The value of Emitter source voltage of UJT for turn-off is 7 V. \ No newline at end of file
diff --git a/181/CH8/EX8.2/example8_2.sce b/181/CH8/EX8.2/example8_2.sce
new file mode 100755
index 000000000..30fb95a2a
--- /dev/null
+++ b/181/CH8/EX8.2/example8_2.sce
@@ -0,0 +1,30 @@
+// Firing angle of Thyristor
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 8-2 in page 377
+
+clear; clc; close;
+
+// Given Data
+Il=50^10*-3; // Latching current of the Thyristor in mA
+t=50^10*-6; // Duration of firing pulse in second
+Es=50; // DC voltage of the circuit in V
+R=10; // Resistance of the circuit in ohm
+L=0.25; // Inductance of the circuit in H
+e=2.718282; // Constant of calculation
+
+// Calculations
+tou=0.025;
+i=(Es/R)*(1-exp((-(50*10^-6))/tou));
+printf("(a) i = %0.3e A\n",i);
+
+if(i<Il)
+ printf("Since the Gate current is less than Latching Current, SCR will not get fired \n");
+else
+ printf("Since the Gate current is more than Latching Current, SCR will get fired \n");
+end
+
+// Results
+// SCR will not get fired in the Circuit \ No newline at end of file
diff --git a/181/CH8/EX8.2/example8_2.txt b/181/CH8/EX8.2/example8_2.txt
new file mode 100755
index 000000000..240b705cf
--- /dev/null
+++ b/181/CH8/EX8.2/example8_2.txt
@@ -0,0 +1,3 @@
+(a) i = 9.990e-003 A
+Since the Gate current is more than Latching Current, SCR will get fired
+ \ No newline at end of file
diff --git a/181/CH8/EX8.3/example8_3.sce b/181/CH8/EX8.3/example8_3.sce
new file mode 100755
index 000000000..411795964
--- /dev/null
+++ b/181/CH8/EX8.3/example8_3.sce
@@ -0,0 +1,21 @@
+// Calculate width of Gating pulse
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 8-3 in page 377
+
+clear; clc; close;
+
+// Given Data
+Il=4*10^-3; // Latching current of SCR in A
+V=100; // DC voltage of the circuit in V
+L=0.1; // Inductance of the circuit in H
+
+// Calculations
+t=(L/V)*Il;
+
+printf("Required width of the gating pulse is %0.2e s",t);
+
+// Results
+// Required width of the gating pulse is 4 mu-s \ No newline at end of file
diff --git a/181/CH8/EX8.3/example8_3.txt b/181/CH8/EX8.3/example8_3.txt
new file mode 100755
index 000000000..1a960923a
--- /dev/null
+++ b/181/CH8/EX8.3/example8_3.txt
@@ -0,0 +1 @@
+Required width of the gating pulse is 4.00e-006 s \ No newline at end of file
diff --git a/181/CH8/EX8.4/example8_4.sce b/181/CH8/EX8.4/example8_4.sce
new file mode 100755
index 000000000..f18357eb8
--- /dev/null
+++ b/181/CH8/EX8.4/example8_4.sce
@@ -0,0 +1,28 @@
+// To calculate required Gate source Resistance
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 8-4 in page 378
+
+clear; clc; close;
+
+// Given Data
+P=0.012; // Value of Allowable Gate Power Dissipation in watt
+Es=10; // Trigger Source Voltage in V
+slope=3*10^3; // Slope of Gate-Cathode Characteristic line
+
+// Calculations
+Ig=sqrt(P/slope);
+Vg=slope*Ig;
+Rs=(Es-Vg)/Ig;
+
+printf("(a)The value of Gate Resistance for the Circuit is %0.0f ohm \n",Rs);
+printf("(b)The value of the Gate Voltage is %0.2e V \n",Vg);
+printf("(c)The value of the Gate Current is %0.2e A \n",Ig);
+
+
+// Results
+// (a) The value of Gate Resistance for the Circuit is 2 K-ohm
+// (b) The value of the Gate Voltage is 6 V
+// (c) The value of the Gate Current is 2 mA \ No newline at end of file
diff --git a/181/CH8/EX8.4/example8_4.txt b/181/CH8/EX8.4/example8_4.txt
new file mode 100755
index 000000000..a5fbdaa11
--- /dev/null
+++ b/181/CH8/EX8.4/example8_4.txt
@@ -0,0 +1,4 @@
+(a)The value of Gate Resistance for the Circuit is 2000 ohm
+(b)The value of the Gate Voltage is 6.00e+000 V
+(c)The value of the Gate Current is 2.00e-003 A
+ \ No newline at end of file
diff --git a/181/CH8/EX8.5/example8_5.sce b/181/CH8/EX8.5/example8_5.sce
new file mode 100755
index 000000000..ac84fbf51
--- /dev/null
+++ b/181/CH8/EX8.5/example8_5.sce
@@ -0,0 +1,22 @@
+// To calculate series Resistance across SCR
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 8-5 in page 378
+
+clear; clc; close;
+
+// Given Data
+Ig_min=0.5; // Minimum gate current for quick ON, in A
+Vs=15; // Gate source voltage in V
+slope=16; // Slope of Gate-Cathode Characteristic line
+
+// Calculations
+Vg=slope*Ig_min;
+Rg=(Vs-Vg)/Ig_min;
+
+printf("The value of Gate Resistance is %0.2f ohm \n",Rg);
+
+// Results
+// The value of Gate Resistance is 14 ohm \ No newline at end of file
diff --git a/181/CH8/EX8.5/example8_5.txt b/181/CH8/EX8.5/example8_5.txt
new file mode 100755
index 000000000..2df754040
--- /dev/null
+++ b/181/CH8/EX8.5/example8_5.txt
@@ -0,0 +1 @@
+The value of Gate Resistance is 14 ohm \ No newline at end of file
diff --git a/181/CH8/EX8.6/example8_6.sce b/181/CH8/EX8.6/example8_6.sce
new file mode 100755
index 000000000..927a94f5f
--- /dev/null
+++ b/181/CH8/EX8.6/example8_6.sce
@@ -0,0 +1,20 @@
+// To determine critical value of dv/dt
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 8-6 in page 379
+
+clear; clc; close;
+
+// Given Data
+ij2=32*10^-3; // Limiting value of the charging current in A
+Cj2=40*10^-12; // Capacitance of reverse biased junction J2 in F
+
+// Calculations
+dv_dt=ij2/Cj2;
+
+printf("The value of dv/dt of the given SCR is %0.2e volt/second \n",dv_dt);
+
+// Results
+// The value of dv/dt of the given SCR is 800 V/mu-s \ No newline at end of file
diff --git a/181/CH8/EX8.6/example8_6.txt b/181/CH8/EX8.6/example8_6.txt
new file mode 100755
index 000000000..80e4dda49
--- /dev/null
+++ b/181/CH8/EX8.6/example8_6.txt
@@ -0,0 +1,2 @@
+The value of dv/dt of the given SCR is 8.00e+008 volt/second
+ \ No newline at end of file
diff --git a/181/CH8/EX8.7/example8_7.sce b/181/CH8/EX8.7/example8_7.sce
new file mode 100755
index 000000000..4a5b2d4aa
--- /dev/null
+++ b/181/CH8/EX8.7/example8_7.sce
@@ -0,0 +1,23 @@
+// Calculate surge current & I2t ratings
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 8-7 in page 379
+
+clear; clc; close;
+
+// Given Data
+ish=3000; // half cycle surge current rating of SCR in A
+f=50; // Frequency of operation of supply in Hz
+
+// Calculations
+I=ish*sqrt(2*f)/sqrt(4*f);
+I2t_rate=(I*I)/(2*f);
+
+printf("(a)The surge current rating of one cycle for the SCR is %0.2f A \n",I);
+printf("(b)The I2t rating of one cycle for the SCR is %0.2f A^2-second \n",I2t_rate);
+
+// Results
+// (a) The surge current rating of one cycle for the SCR is 2121.32 A
+// (b) The I2t rating of one cycle for the SCR is 45000 A^2-second \ No newline at end of file
diff --git a/181/CH8/EX8.7/example8_7.txt b/181/CH8/EX8.7/example8_7.txt
new file mode 100755
index 000000000..970a52106
--- /dev/null
+++ b/181/CH8/EX8.7/example8_7.txt
@@ -0,0 +1,3 @@
+(a)The surge current rating of one cycle for the SCR is 2121.32 A
+(b)The I2t rating of one cycle for the SCR is 45000.00 A^2-second
+ \ No newline at end of file
diff --git a/181/CH8/EX8.8/example8_8.sce b/181/CH8/EX8.8/example8_8.sce
new file mode 100755
index 000000000..0080c08d9
--- /dev/null
+++ b/181/CH8/EX8.8/example8_8.sce
@@ -0,0 +1,29 @@
+// Max and Min firing delays
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 8-8 in page 386
+
+clear; clc; close;
+
+// Given Data
+Vc=40; // Breakdown voltage of DIAC in V
+C=470*10^-9; // Capacitance in nF
+E=240; // Rms voltage at 50 Hz in V
+omga=2*%pi*50; // Angular frequency
+
+// Calculation
+printf("When DIAC is not conducting:\n")
+A=asind(40/335.8)+8.4;
+Z=1/(omga*C);
+R1=atand(1/(omga*1000*C));
+Zd=sqrt(R1^(2+(1/omga^2*C^2)));
+printf("Minimum delay = %0.2f degrees\n\n",A);
+printf("When DIAC conducts:\n");
+A1=asind(40/88.6)+74.84;
+printf("Maximum delay = %0.2f degrees",A1);
+
+// Result
+// Minimum delay = 15.24 degrees
+// Maximum delay = 101.6 degrees \ No newline at end of file
diff --git a/181/CH8/EX8.8/example8_8.txt b/181/CH8/EX8.8/example8_8.txt
new file mode 100755
index 000000000..adfbe88f5
--- /dev/null
+++ b/181/CH8/EX8.8/example8_8.txt
@@ -0,0 +1,5 @@
+When DIAC is not conducting:
+Minimum delay = 15.24 degrees
+
+When DIAC conducts:
+Maximum delay = 101.68 degrees \ No newline at end of file