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diff --git a/181/CH2/EX2.4/example2_4.sce b/181/CH2/EX2.4/example2_4.sce
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+// Barrier potential for silicon junction
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 2-4 in page 84
+
+clear; clc; close;
+
+// Given data
+t=[70 0]; // Declaring the variables
+t1=25; // Given temperature in K
+
+// Calculation
+alp=[1 2];
+for i=1:2
+delta_V=-0.002*(t(i)-t1);
+Vb=0.7+delta_V;
+printf("(%0.0f)delta_V at %d degrees = %0.2f V\n",alp(i),t(i),delta_V);
+printf("Thus the barrier potential at %d degress = %0.2f V\n",t(i),Vb);
+end
+
+// Result
+// (a) Barrier potential at 70 degrees is 0.61 V
+// (b) Barrier potential at 0 degrees is 0.75 V
+\ No newline at end of file
diff --git a/181/CH2/EX2.4/example2_4.txt b/181/CH2/EX2.4/example2_4.txt
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+ (1)delta_V at 70 degrees = -0.09 V
+Thus the barrier potential at 70 degress = 0.61 V
+(2)delta_V at 0 degrees = 0.05 V
+Thus the barrier potential at 0 degress = 0.75 V
+ 
+\ No newline at end of file