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+// Width of depletion zone at 300K
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 2-2 in page 83
+
+clear; clc; close;
+
+// Given data
+N_d=10^16; // Donor concentration /cm^3
+N_a=5*10^18; // Acceptor concentration /cm^3
+ni=1.5*10^10; // Intrinsic concentration /cm^3
+e=1.6*10^-19; // Charge on an electron in C
+epsln=11.8*8.85*10^-14; // Constant of calculation
+
+// Calculation
+V_0=0.0259*log((N_d*N_a)/(ni^2));
+printf("The height of the barrier energy is %0.2f V\n",V_0);
+
+W=sqrt(2*((epsln*V_0)/(e)*((1/N_a)+(1/N_d))));
+printf("Width of depletion zone is %0.3e cm",W);
+
+// Result
+// The height of the barrier energy is 0.86 V
+// Width of depletion zone in n-type Si is 3.354*10^-5 cm
+\ No newline at end of file