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+// Concentration of holes and electrons
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 1-27 in page 52
+
+clear; clc; close;
+
+// Data given
+sigma=100; // Conductivity of p-type germanium
+e=1.6*10^-19; // Charge on an electron in eV
+mu_p=1800; // Mobility of holes in cm^2/Vs
+ni=2.5*10^13; // Number of intrinsic atoms in germanium
+mu_n=1300; // Mobility of electrons in cm^2/Vs
+sigma1=0.1; // Conductivity in n-type silicon in /ohm-cm
+ni1=1.5*10^10; // Number of intrinsic atoms in silicon
+P_p=3.47*10^17; // Constant of calculation
+
+// Calculation
+printf("For Germanium:\n");
+p_0=sigma/(e*mu_p);
+n_0=(ni^2)/P_p;
+printf("(a)Concentration of holes is %0.2e cm^-3\n",p_0);
+printf("(b)Concentration of electrons is %0.2e m^-3\n",n_0);
+printf("For Silicon:\n");
+n_0=sigma1/(e*mu_n);
+p_0=(ni1^2)/(4.81*10^14);
+printf("(c)Concentration of electrons is %0.2e cm^-3\n",n_0);
+printf("(d)Concentration of holes is %0.2e m^-3",p_0);
+
+// Result
+// (a) For Ge,Hole conc. = 3.47*10^17 cm^-3, Electron conc. = 1.8*10^15 m^-3
+// (b) For Si,Hole conc. = 4.68*10^5 cm^-3, Electron conc. = 4.81*10^14 cm^-3
+\ No newline at end of file
diff --git a/181/CH1/EX1.27/example1_27.txt b/181/CH1/EX1.27/example1_27.txt
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+ For Germanium:
+(a)Concentration of holes is 3.47e+017 cm^-3
+(b)Concentration of electrons is 1.80e+009 m^-3
+For Silicon:
+(c)Concentration of electrons is 4.81e+014 cm^-3
+(d)Concentration of holes is 4.68e+005 m^-3 
+\ No newline at end of file