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+// Previous problem calculated for intrinsic silicon
+// Basic Electronics
+// By Debashis De
+// First Edition, 2010
+// Dorling Kindersley Pvt. Ltd. India
+// Example 1-24 in page 51
+
+clear; clc; close;
+
+// Data given
+kT=0.026; // Value at T=300K
+T=300; // Room temperature in K
+dT=1/300; // Rate of change of temperature
+E_g=1.21; // Band gap energy in silicon in eV
+
+// Calculation
+dni=((1.5+(E_g/(2*kT)))*dT)*100; 
+
+printf("Rise in intrinsic carrier concentration is %0.1f percent/degree",dni);
+
+// Result
+// Percentage rise in intrinsic carrier concentration is 8.3 %/degree
+\ No newline at end of file
diff --git a/181/CH1/EX1.24/example1_24.txt b/181/CH1/EX1.24/example1_24.txt
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+Rise in intrinsic carrier concentration is 8.3 percent/degree 
+\ No newline at end of file