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Diffstat (limited to '1586/CH5/EX5.3')
| -rw-r--r-- | 1586/CH5/EX5.3/EXP5_3.jpg | bin | 0 -> 169046 bytes | |||
| -rw-r--r-- | 1586/CH5/EX5.3/EXP5_3.sce | 16 |
2 files changed, 16 insertions, 0 deletions
diff --git a/1586/CH5/EX5.3/EXP5_3.jpg b/1586/CH5/EX5.3/EXP5_3.jpg Binary files differnew file mode 100644 index 000000000..2db405a27 --- /dev/null +++ b/1586/CH5/EX5.3/EXP5_3.jpg diff --git a/1586/CH5/EX5.3/EXP5_3.sce b/1586/CH5/EX5.3/EXP5_3.sce new file mode 100644 index 000000000..e4e4e0d4f --- /dev/null +++ b/1586/CH5/EX5.3/EXP5_3.sce @@ -0,0 +1,16 @@ +clc;funcprot(0);//EXAMPLE 5.3
+// Initialisation of Variables
+X=0.1;.......//Thickness of SIlicon Wafer in cm
+n=8;.......//No. of atoms in silicon per cell
+ni=1;..........//No of phosphorous atoms present for every 10^7 Si atoms
+ns=400;.......//No of phosphorous atoms present for every 10^7 Si atoms
+ci1=(ni/10^7)*100;..........//Initial compositions in atomic percent
+cs1=(ns/10^7)*100;...........//Surface compositions in atomic percent
+G1=(ci1-cs1)/X;.....//concentration gradient in percent/cm
+a0=1.6*10^-22;........//The lattice parameter of silicon
+v=(10^7/n)*a0;......//volume of the unit cell in cm^3
+ci2=ni/v;..........//The compositions in atoms/cm^3
+cs2=ns/v;..........//The compositions in atoms/cm^3
+G2=(ci2-cs2)/X;.....//concentration gradient in percent/cm^3.cm
+disp(G1,"concentration gradient in percent/cm:")
+disp(G2,"concentration gradient in percent/cm^3.cm:")
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