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+clear;
+clc;
+//Example 1.4
+T=300;//(°K)Given Temperature
+Na=10^16;//(cm^-3)Acceptor concentration in p region
+Nd=10^15;//(cm^-3)Donor concentration in n region
+n_i=1.5*10^10;//(cm^-3)intrinsic carrier concentration
+C_jo=0.5;//(pF)junction capacitance at zero applied voltage
+V_T=0.026;//(Volt)terminal voltage
+//built-in potential
+V_bi=V_T*log(Na*Nd/(n_i)^2);
+disp(V_bi,"the built-in potential(V)")
+//the junction capacitance for
+V_R=1;//(V)reverse bias voltage
+Cj=C_jo*(1+V_R/V_bi)^(-1/2);
+printf('\nthe junction capacitance for V_R=1V=%f pF\n',Cj)
+V_R=5;//(V)reverse bias voltage
+Cj=C_jo*(1+V_R/V_bi)^(-1/2);
+printf('\nthe junction capacitance for V_R=5V =%f pF',Cj)