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+clear;
+clc;
+//Example 1.1
+T=300;//((°K)temperature)
+//for silicon
+B=5.23*10^(15);//Constant (per centimeter cube degree kelvin)
+Eg=1.1;//bandgap energy in electrovolt(eV)
+k=86*10^(-6);//Boltzmann's constant(eV per degree kelvin)
+n_i=B*T^(3/2)*exp(-Eg/(2*k*T));//intrinsic carrier concentration
+printf('intrinsic carrier concentration=%f cm^-3',n_i);