initial commit / add all books

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diff --git a/72/CH5/EX5.1.1/5_1_1.sce b/72/CH5/EX5.1.1/5_1_1.sce
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+//CAPTION: Equivalent_Elements_of_a_Hybrid-Pi_Common-Emitter_Circuit

+//CHAPTER NO.-5

+//Example No.5-1-1 , Page No.-195 

+                                                                     

+//(a) Program_to_find_the_mutual_inductance_gm. 

+         

+                                                                     

+ic=6*(10^-3);//Collector_Current

+vt=26*(10^-3); //vt=26mV_at_300k_is_the_voltage_equivalent_of_temperature        

+gm=ic/vt;//the_mutual_inductance_is gm=(ic/vt)   

+disp(gm,'the_mutual_inductance_is gm(in mho)=');                      

+

+//(b) Program_to_find_the_input_inductance_gb_and_resistance_R 

+

+hfe=120;//hfe= common-emitter_current_gain_factor

+gb=gm/hfe;//input_inductance

+R=1/gb; //Resistance

+

+disp(gb,'input_inductance gb(in mho)=');

+disp(R,'input_resistance R (in ohms)=');

+

+//(c)Program_to_find_the_electron_diffusion_coefficient_Dn

+

+un=1600;//electron_Mobility

+Dn=un*vt; // Dn=un*kt/q=un*26*(10^-3);

+

+disp(Dn,'electron_diffusion_coefficient_Dn(in cm2/s)=');

+

+//(d)Program_to_find_the_diffusion_capacitance_Cbe

+Wb=(10^-8); //cross_sectional_area

+Cbe=(gm*(Wb^2))/(2*Dn*(10^-7));

+Cbe=Cbe/(10^-12);

+disp(Cbe,'diffusion_capacitance_Cbe(in pF)=');
\ No newline at end of file
diff --git a/72/CH5/EX5.1.2/5_1_2.sce b/72/CH5/EX5.1.2/5_1_2.sce
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+//CAPTION:I-V_Characteristics_of_an_n-p-n_Transistor

+//CHAPTER NO.-5

+//Example No.5-1-2 , Page No.-203 

+                                                                     

+//(a) Program_to_find_the_impurity_desities_in_the_emitter,base_and_collector_regions

+                                                                                                                           

+disp('the impurity densities (in cm-3)are read from Fig A-1 in the Appendix A as NdE=1*(10^19)[the impurity density in the n-type emitter region], NaB=1.5*(10^17) [the impurity density in the p-type base region],NdC=3*(10^14)[the impurity density in the n-type collector region]'); 

+NdE=1*(10^19); 

+NaB=1.5*(10^17);

+NdC=3*(10^14);

+

+//(b)Program_to_find_the_mobilities_in_the_emitter,base and collector_regions

+disp('the mobilities(in cm2/v*s)are read from fig A-2 in the Appendix A as upe=80[mobility in the emitter] , unE=105[mobility in the emitter] , upB=400[mobility in the base] , unC=1600[mobility in the collector]'); 

+upE=80;

+unE=105;

+upB=400;

+unC=1600;

+

+//(c)Program_to_find_the_diffusion_lengths_in_the_emitter,base and collector_regions

+disp('the_diffusion_constants_are_computed_to_be');

+Vt=26*(10^-3);

+

+DpE=upE*Vt;

+DnE=unE*Vt;

+DpB=upB*Vt;

+DnC=unC*Vt;

+disp(DpE,'DpE=');

+disp(DnE,'DnE=');

+disp(DpB,'DpB=');

+disp(DnC,'DnC=');

+

+//(d)Program_to_compute_the_equilibrium_densities_in the emitter,base and_collector_regions

+

+disp('the_equlibrium_densities_are');

+ni=1.5*(10^10);

+

+pEo=(ni^2)/NdE; 

+npB=(ni^2)/NaB;

+pCo=(ni^2)/NdC;

+disp(npB,'npB=');

+disp(pEo,'pEo=');

+disp(pCo,'pCo=');

+

+//(e)Program_to_compute_the_terminal_currents

+

+disp('the_terminal_currents_are_computed_as follows. From Eq 5-1-39, the_electron_current_in_the_emitter_is ');

+A=2*(10^-2);// cross-section_area

+q=1.6*(10^-19);

+W=(10^-5);//base_width

+Le=(10^-4);//Diffusion_length_in_emitter

+Ve=.5;//Emitter_junction_voltage

+InE=-(A*q*DnE*(ni^2)*exp(Ve/Vt))/(NaB*W);//Ine=-(Aq*Dp*(ni^2)*(exp(Ve/Vt)-1))/(Le*Nd);

+InE=InE/(10^-3);

+disp(InE,'the_electron_current_in_the_emitter_is(in mA)');

+

+disp('From Eq5-1-42,_the_hole_current_in_the_emitter_is ');

+IpE=(A*q*DpE*(ni^2)*(exp(Ve/Vt)-1))/(Le*NdE);//Ipe=(A*q*De*peo*(exp(Ve/Vt)-1))/Le  =  (A*q*Dp*(ni^2)*(exp(Ve/Vt)-1))/(Le*Nd)

+IpE=IpE/(10^-6);

+disp(IpE,'the_electron_current_in_the_emitter_is(in uA)');

+

+

+

+disp('From Eq-5-1-24, the_reverse_saturation_current_in_the_collector_is ');

+ICo=-(A*q*DnE*(ni^2)/(NaB*W))-(A*q*DpE*pEo)/Le;

+ICo=ICo/(10^-12);

+disp(ICo,'the_electron_current_in_the_emitter_is(in pA)');

+

+

+disp('From Eq-5-1-40,_the_electron_current_which_reaches_the_collector is ');

+InC=-(A*q*DnE*(ni^2)*exp(Ve/Vt)/(NaB*W));

+InC=InC/(10^-3);

+disp(InC,'the_electron_current_which_reaches_the_collector_is (in mA)');

+

+IE=(-IpE*(10^-6))+(InE*(10^-3));

+IE=IE/(10^-3);

+disp(IE,'the_emitter_current_is (in mA)');

+

+IC=(-ICo*(10^-12))-(InC*(10^-3));

+IC=IC/(10^-3);

+disp(IC,'the_collector_current_is (in mA)');

+

+IB=(IpE*(10^-6))-[((InE*(10^-3)))-(InC*(10^-3))]+(ICo*(10^-12));

+IB=IB/(10^-6);

+disp(IB,'the_current_in_the_base_terminal_is_(in uA)');

+

+disp('NOTE: The_recombination-generation_currents_in_the_spcae-charge_regions_are_not_counted');

+

diff --git a/72/CH5/EX5.1.3/5_1_3.sce b/72/CH5/EX5.1.3/5_1_3.sce
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+//CAPTION: Silicon_Bipolar_Transistor

+//CHAPTER NO.-5

+//Example No.5-1-3 , Page No.-206 

+                                                                     

+//(a) Program_to_find_the_mobilities_un_and_up 

+

+ disp('the mobilities(in cm2/v.s )are read from Fig-A-2 in Appendix A as un=200 for NdE=5*(10^18) cm-3 and up=500 for Na=5*(10^16) cm-3');

+  un=200;

+  up=500;

+  

+  //(b) Program_to_find_the_diffusion_coefficients_Dn_and_Dp 

+  Vt=26*(10^-3);//Vt=kt/q

+  Dn=un*Vt;

+  Dp=up*Vt;  

+  

+  disp(Dn,'diffusion_coefficient_are_Dn(in cm2/s)=');  

+  disp(Dp,'and__Dp(in cm2/s)=');                

+

+//(c) Program_to_find_the_emitter_efficiency_factor_y

+W=(10^-3);//Base_width

+Le=(10^-2);//Emitter_Length

+Na=5*(10^16);//Acceptor_density_in_base_region

+Nd=5*(10^18);//Donor_density_in_emitter_region

+y=1/(1+((Dp*Na*W)/(Dn*Nd*Le)));

+

+disp(y,'emitter_efficiency_factor_y=');

+

+

+//(d) Program_to_find_the_transport_factor_B

+

+t=10^-6;//hole_lifetime

+B=1-(W^2)/(2*Dn*t);//transport_factor

+

+disp(B,'the transport factor B=');

+

+

+//(e) Program_to_find_the_current_gain_a

+

+a=B*y;

+

+disp(a,'the current_gain a=');

diff --git a/72/CH5/EX5.1.4/5_1_4.sce b/72/CH5/EX5.1.4/5_1_4.sce
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index 000000000..dd34e1940
--- /dev/null
+++ b/72/CH5/EX5.1.4/5_1_4.sce
@@ -0,0 +1,13 @@
+//CAPTION: Power-Frequency_Limitation

+//CHAPTER NO.-5

+//Example No.5-1-4 , Page No.-211 

+                                                                     

+// Program_to_determine_the_maximum_allowable_power_that_the_transisitor_can_carry 

+    

+  Xc=1;//Reactance

+  ft=4*(10^9);//Transit_cut-off_frequency

+  Em=1.6*(10^5);//maximum_electric_field

+  Vx=4*(10^5);//saturation_drift_velocity

+  

+  Pm=(((Em*Vx/(2*%pi)))^2)/(Xc*(ft^2)); 

+ disp(Pm,'the_maximum _allowable_power(in W)_that_the_transisitor_can_carry_is ');

diff --git a/72/CH5/EX5.2.1/5_2_1.sce b/72/CH5/EX5.2.1/5_2_1.sce
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@@ -0,0 +1,19 @@
+//CAPTION: Heterojunction_Bipolar_Transistor(HBT)

+//CHAPTER NO.-5

+//Example No.5-2-1 , Page No.-213 

+                                                                     

+//(a) Program_to_determine_the_latice_match_present_in_percent 

+  disp('the_latice_match_present_is_within 1%');  

+  

+  //(b) Program_to_find_the_conduction-band_differential_between_Ge_and_GeAs

+  X1=4;//electron_affinity

+  X2=4.07;//electron_affinity

+  AE=X1-X2;

+disp(AE,'the_conduction-band differential_is(in eV) =');  

+  

+//(c) Program_to_find_the_valence-band_differential_between_Ge_and_GeA  

+   Eg2=1.43;//energy_gap

+ Eg1=.8;//energy_gap

+  Ev=Eg2-Eg1-AE

+disp(Ev,'the valence-band differential is(in eV) =');  

+ 
\ No newline at end of file
diff --git a/72/CH5/EX5.2.2/5_2_2.sce b/72/CH5/EX5.2.2/5_2_2.sce
new file mode 100755
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+++ b/72/CH5/EX5.2.2/5_2_2.sce
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+//CAPTION:n-Ge-p-GaAs-n-GaAs HBT

+//CHAPTER NO.-5

+//Example No.5-2-2 , Page No.-215 

+                                                                     

+//(a) Program_to_compute_the_built-in voltage_in_the p-GaAs_side

+ Na=6*(10^16); //Acceptor_density_in_p-GaAs_side

+  w02=-26*(10^-3)*log(Na/(1.8*(10^6)));                                                              

+disp(w02,'the_built-in_voltage(in V)  in_the p-GaAs_side');  

+                                                                   

+ //(b) Program_to_compute_the_hole_mobility 

+ 

+ disp('The hole mobility is read from Fig -A-2 in Appendix A as up=400(cm2/v.s)'); 

+ up=400;

+ 

+ //(c) Program_to_compute_the_hole_diffusion_constant

+ Dp=up*26*(10^-3); 

+ 

+ disp(Dp,'The_hole_diffusion_constant_is Dp(cm2/s)=');

+ 

+ 

+  //(d) Program_to_compute_the_minority_hole_density in n-Ge 

+  

+  ni=1.5*(10^10);

+  Nd=5*(10^18);//Donor_density_in_n-Ge_region

+  pno=(ni^2)/Nd;

+   disp(pno,'the_minority_hole density (cm-3)in_n-Ge_is =');

+   

+     //(e) Program_to_compute_the_minority_electron_density_in_p-GaAs_region 

+  Na=6*(10^16);

+ npo=((1.8*10^6)^2)/Na;

+   disp(npo,'the_minority_electron_density(in cm-3)_in_p-GaAs_region_is =');

+   

+   

+   //(e) Program_to_compute_the_hole_diffusion_length 

+   tp=6*(10^-6);//hole_lifetime

+   Lp=sqrt(tp*Dp);

+   disp(Lp,'the_hole_diffusion_length(in cm) is =');

+   

+   //(e) Program_to_compute_the_emitter-junction_current 

+   

+   A=2*(10^-2);//cross_section

+   VE=1;//bias_voltage_at_emitter_junction

+   q=1.6*(10^-19);

+   l=VE/(26*(10^-3));

+   I=(A*q*Dp*pno*(exp(l)-1))/(Lp);

+   disp(I,'the_emitter-junction_current(in A)is =');

+   

+   
\ No newline at end of file