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| author | priyanka | 2015-06-24 15:03:17 +0530 |
|---|---|---|
| committer | priyanka | 2015-06-24 15:03:17 +0530 |
| commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
| tree | ab291cffc65280e58ac82470ba63fbcca7805165 /506/CH7/EX7.1/Example7_1.sce | |
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Diffstat (limited to '506/CH7/EX7.1/Example7_1.sce')
| -rwxr-xr-x | 506/CH7/EX7.1/Example7_1.sce | 25 |
1 files changed, 25 insertions, 0 deletions
diff --git a/506/CH7/EX7.1/Example7_1.sce b/506/CH7/EX7.1/Example7_1.sce new file mode 100755 index 000000000..1d9f092db --- /dev/null +++ b/506/CH7/EX7.1/Example7_1.sce @@ -0,0 +1,25 @@ +clear;
+clc;
+
+//caption:Diffusion of a pn junction
+
+disp('At distance equal to x=xi at which N = concentration n of doped silicon wafers , the net impurity density is zero. Thus xi is the distance at which junction is formed');
+
+//Given Data
+q = 1.6*(10^-19);//Charge of electron
+yn=1300;//mobility of silicon
+p = 0.5;//resistivity in ohm=cm
+y=2.2;
+t=2*3600;//in sec.
+xi = 2.7*(10^-4);// Junction Depth in cm.
+
+n = 1/(p*yn*q);//Concentration of doped silicon wafer
+disp('cm^-3',n,'The concentration n =');
+disp('The junction is formed when N = n');
+
+//y = xi/(2*(D*t)^0.5)
+D=((xi)^2/((2*y)^2*t));//Diffusion Constant
+
+disp('cm^2/sec',D,'The value of Diffusion Constant for Boron = ');
+
+//end
\ No newline at end of file |