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| author | priyanka | 2015-06-24 15:03:17 +0530 |
|---|---|---|
| committer | priyanka | 2015-06-24 15:03:17 +0530 |
| commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
| tree | ab291cffc65280e58ac82470ba63fbcca7805165 /506/CH6/EX6.3.c/Example6_3c.sce | |
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Diffstat (limited to '506/CH6/EX6.3.c/Example6_3c.sce')
| -rwxr-xr-x | 506/CH6/EX6.3.c/Example6_3c.sce | 29 |
1 files changed, 29 insertions, 0 deletions
diff --git a/506/CH6/EX6.3.c/Example6_3c.sce b/506/CH6/EX6.3.c/Example6_3c.sce new file mode 100755 index 000000000..e9f8b6b3a --- /dev/null +++ b/506/CH6/EX6.3.c/Example6_3c.sce @@ -0,0 +1,29 @@ +clear;
+clc;
+
+//Caption:Silicon Transistors and diodes are used in positive NAND
+//Given Data
+R=15;//in K
+R1=15;//in K
+R2=100;//in K
+R3=2.2;//in K
+V0=0;//in V
+V1=12;//in V
+Vcc=12;//in V
+
+//To find wether with given conditions NANAD gate is satisfied
+//Finding thevenin equivallent from P to ground
+Rd = 1;//in K
+Vd=0.7;//in v
+Vr=1;//in K
+v = (Vcc*(Rd/(Rd+R)))+(Vd*(R/(R+Rd)));
+rs = Rd*(R/(R+Rd));
+
+//If the inputs are high
+
+Vcesat = 0.2;//in V
+Vb2 = (-Vcc*(R1/(R1+R2)) + ((Vd+Vcesat)*R2/(R1+R2)));
+disp('V',Vb2,'Vb2=');
+disp('It cuts off Q Y=1 ');
+
+//end
\ No newline at end of file |