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| author | priyanka | 2015-06-24 15:03:17 +0530 |
|---|---|---|
| committer | priyanka | 2015-06-24 15:03:17 +0530 |
| commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
| tree | ab291cffc65280e58ac82470ba63fbcca7805165 /506/CH6/EX6.3.b/Example6_3b.sce | |
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Diffstat (limited to '506/CH6/EX6.3.b/Example6_3b.sce')
| -rwxr-xr-x | 506/CH6/EX6.3.b/Example6_3b.sce | 32 |
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diff --git a/506/CH6/EX6.3.b/Example6_3b.sce b/506/CH6/EX6.3.b/Example6_3b.sce new file mode 100755 index 000000000..acd1e15d6 --- /dev/null +++ b/506/CH6/EX6.3.b/Example6_3b.sce @@ -0,0 +1,32 @@ +clear;
+clc;
+
+//Caption://To find wether with given conditions NAND gate is satisfied
+//Given Data
+R=15;//in K
+R1=15;//in K
+R2=100;//in K
+R3=2.2;//in K
+V0=0;//in V
+V1=12;//in V
+Vcc=12;//in V
+
+//If input is at V0=0V
+Vb = -Vcc*(R1/(R1+R2));//Base Current in V
+
+//Finding thevenin equivallent fom P to ground
+Rd = 1;//in K
+Vd=0.7;//in v
+Vr=1;//in K
+//Thevenin Equivallent Voltage and resistance from P to ground
+v = (Vcc*(Rd/(Rd+R)))+(Vd*(R/(R+Rd)));
+rs = Rd*(R/(R+Rd));
+//Open Circuit Voltage at base of the transistor
+Vb1 = (-Vcc*((R1+rs)/(R1+R2+rs))) + (v*(R2/(R1+R2+rs)));
+disp('V',Vb1,'Vb1=');
+if(Vb1>Vb)
+ disp('The voltage is adequate to reverse bias Q');
+end
+
+
+//end
\ No newline at end of file |