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| author | priyanka | 2015-06-24 15:03:17 +0530 |
|---|---|---|
| committer | priyanka | 2015-06-24 15:03:17 +0530 |
| commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
| tree | ab291cffc65280e58ac82470ba63fbcca7805165 /506/CH10/EX10.1.b | |
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initial commit / add all books
Diffstat (limited to '506/CH10/EX10.1.b')
| -rwxr-xr-x | 506/CH10/EX10.1.b/Example10_1b.sce | 21 |
1 files changed, 21 insertions, 0 deletions
diff --git a/506/CH10/EX10.1.b/Example10_1b.sce b/506/CH10/EX10.1.b/Example10_1b.sce new file mode 100755 index 000000000..2972ceb14 --- /dev/null +++ b/506/CH10/EX10.1.b/Example10_1b.sce @@ -0,0 +1,21 @@ +clear;
+clc;
+
+//Caption: Pinch off V and channel half width of silicon FET
+
+//Given Values
+a=3*(10^-4);//in m
+Nd=10^15;//in electrons/m^3
+q=1.6*(10^-19)//in C
+eo=8.85*(10^-12);//Permittivity of free space
+e=12*eo;//Relative Permittivity
+
+Vp=(q*Nd*a*a*10^6*10^-4)/(2*e);//in V
+//a is in cm so 10^-4 is multiplied and Nd is in electrons/cm^3 so 10^6 is multiplied
+Vgs= Vp/2;
+
+b=a*(1-((Vgs/Vp)^(0.5)));//in cm
+
+disp('cm',b,'Channel Half Width = ');
+
+//end
\ No newline at end of file |