initial commit / add all books

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diff --git a/3834/CH10/EX10.1.1/Ex10_1_1.jpg b/3834/CH10/EX10.1.1/Ex10_1_1.jpg
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diff --git a/3834/CH10/EX10.1.1/Ex10_1_1.sce b/3834/CH10/EX10.1.1/Ex10_1_1.sce
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+//Fiber-optics communication technology, by Djafer K. Mynbaev and Lowell L. Scheiner 

+//Example 10.1.1

+//windows 7

+//Scilab version-6.0.0

+clc;

+clear ;

+//given

+E=0.712;//the energy gap E=Ec-Ef in eV

+KBT=0.025;//Boltzman constant temperature product in eV

+e=1.6E-19;//Electrons value in Coulomb

+Y=E/KBT;

+fE= exp(-Y);//Probability of excited electrons at conduction band at room tenmperature 

+

+mprintf("The probability of excited electrons at conduction band at room tenmperature = %.2f *1e-13 ",fE*1e13);//multiplication by 1e13 to change the unit to 1e-13

diff --git a/3834/CH10/EX10.1.2/Ex10_1_2.jpg b/3834/CH10/EX10.1.2/Ex10_1_2.jpg
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diff --git a/3834/CH10/EX10.1.2/Ex10_1_2.sce b/3834/CH10/EX10.1.2/Ex10_1_2.sce
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+//Fiber-optics communication technology, by Djafer K. Mynbaev and Lowell L. Scheiner 

+//Example 10.1.2

+//windows 7

+//Scilab version-6.0.0

+clc;

+clear ;

+//given

+T=300;//temperature in K

+kB=1.38E-23;//Boltzman constant in J/K

+E=kB*T;

+e=1.6E-19;//Electrons value in Coulomb

+Vd=0.7;;//depletion voltage in V

+Y=e*Vd/E;

+nnbynp=exp(Y);//Ratio of majority to minority charge carriers in an n type and a p type of silicon semiconductor

+mprintf("Ratio of majority to minority charge carriers in an n type and a p type of silicon semiconductor = %.2f x10^11",nnbynp/1e11);//the answer vary due to rounding

diff --git a/3834/CH10/EX10.2.1/Ex10_2_1.jpg b/3834/CH10/EX10.2.1/Ex10_2_1.jpg
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diff --git a/3834/CH10/EX10.2.1/Ex10_2_1.sce b/3834/CH10/EX10.2.1/Ex10_2_1.sce
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+//Fiber-optics communication technology, by Djafer K. Mynbaev and Lowell L. Scheiner 

+//Example 10.2.1

+//windows 7

+//Scilab version-6.0.0

+clc;

+clear ;

+//given

+lambda=1300;//Operating wavelength in nm

+ETAext=0.1;//External Quantum Efficiency

+e=1.6E-19;//Electrons value in Coulomb

+Ep=0.0153E-17;//photon's energy in J

+SlopeE=(Ep/e)*ETAext;//Slope Efficiency

+mprintf("Slope Efficiency = %.3f",SlopeE);

diff --git a/3834/CH10/EX10.2.2/Ex10_2_2.jpg b/3834/CH10/EX10.2.2/Ex10_2_2.jpg
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diff --git a/3834/CH10/EX10.2.2/Ex10_2_2.sce b/3834/CH10/EX10.2.2/Ex10_2_2.sce
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+//Fiber-optics communication technology, by Djafer K. Mynbaev and Lowell L. Scheiner 

+//Example 10.2.2

+//windows 7

+//Scilab version-6.0.0

+clc;

+clear ;

+//given

+

+//case 1

+lambda=840;//Operating wavelength in nm

+Eg=1248/lambda;//semiconductor bandgap in eV

+e=1.6E-19;//Electrons value in Coulomb

+V=Eg;//voltage in V

+R=1;//Reflectivity

+I=10E-3;//Current in A

+P1=I*I*R;

+P2=I*V;

+P3=P1+P2;

+Pout=1.25E-3;//Output power in W

+ETAp=Pout/P3;

+mprintf("Power Efficiency of a VCSEL diode = %.3f", ETAp);

+ETAP=ETAp*100;

+mprintf("\n Hence, Power Efficiency of a VCSEL diode = %.1f Percent ",ETAP);

+

+//case 2

+lambda2=1300;//Operating wavelength in nm

+Eg2=1248/lambda2;//semiconductor bandgap in eV

+e2=1.6E-19;//Electrons value in Coulomb

+V2=Eg2;//voltage in V

+R2=1.84;//Reflectivity

+I2=312E-3;//Current in A

+P11=I2*I2*R;

+P22=I2*V2;

+P33=P11+P22;

+Pout1=1E-3;//Output power in W

+ETAp1=Pout1/P33;

+mprintf("\nPower Efficiency of a broad area laser diode = %.3f", ETAp1);

+ETAP1=ETAp1*100;

+mprintf("\n Hence, Power Efficiency of a broad area laser diode = %.1f Percent ",ETAP1);//the answer vary due to rounding

diff --git a/3834/CH10/EX10.3.1/Ex10_3_1.jpg b/3834/CH10/EX10.3.1/Ex10_3_1.jpg
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diff --git a/3834/CH10/EX10.3.1/Ex10_3_1.sce b/3834/CH10/EX10.3.1/Ex10_3_1.sce
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+//Fiber-optics communication technology, by Djafer K. Mynbaev and Lowell L. Scheiner 

+//Example 10.3.1

+//windows 7

+//Scilab version-6.0.0

+clc;

+clear;

+//given

+Ith1=40//threshold current in mA at 25 degree centigrade

+Ith2=66//threshold current in mA at 25 degree centigrade

+T1=25;//temperature  in degree centigrade for calculation of threshold current

+T2=65//temperature  in degree centigrade for calculation of threshold current

+delta=2.5//threshold current change with temperature in percent per degree centigrade

+Io=Ith1/(1+(delta/100)*T1);//characteristic current in mA at 0

+x=log(Ith1/Io)//constant

+To=T1/x//characteristic temperature degree centigrade

+mprintf("Io =%0.0f mA ",Io)

+mprintf("\nTo =%0.0f degree Centigrade",To)//answer vary due to rounding

diff --git a/3834/CH10/EX10.3.2/Ex10_3_2.jpg b/3834/CH10/EX10.3.2/Ex10_3_2.jpg
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diff --git a/3834/CH10/EX10.3.2/Ex10_3_2.sce b/3834/CH10/EX10.3.2/Ex10_3_2.sce
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+//Fiber-optics communication technology, by Djafer K. Mynbaev and Lowell L. Scheiner 

+//Example 10.3.2

+//windows 7

+//Scilab version-6.0.0

+clc;

+clear ;

+//given

+

+tau=2E-9;//Carrier recombination lifetime in s

+Ith=90E-3;//threshold current in A

+Ip=40E-3;//amplitude of modulation current in A

+//case 1

+Ib=80E-3;//Assumed bias current in A

+Td=tau*log(Ip/(Ip+Ib-Ith));

+

+mprintf("The delay time for broad-area laser diode with Ib %.2f mA= %.2f ns",Ib*1e3,Td*1E+9);

+//case 2

+Ib=70E-3;//Assumed bias current in A

+Td=tau*log(Ip/(Ip+Ib-Ith));

+

+mprintf("\nThe delay time for broad-area laser diode with Ib %.2f mA= %.2f ns",Ib*1e3,Td*1E+9);

+//case 3

+Ib=90E-3;//Assumed bias current in A

+Td=abs(tau*log(Ip/(Ip+Ib-Ith)));

+

+mprintf("\nThe delay time for broad-area laser diode with Ib %.2f mA= %.2f ns",Ib*1e3,Td*1E+9);

+//multiplication by 1e3 to convert unit to mA from A and multiplication by 1e9 to convert unit from s to ns

+

+//the answers vary due to rounding 

diff --git a/3834/CH10/EX10.3.3/Ex10_3_3.jpg b/3834/CH10/EX10.3.3/Ex10_3_3.jpg
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index 000000000..1ab1b8345
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+++ b/3834/CH10/EX10.3.3/Ex10_3_3.jpg
diff --git a/3834/CH10/EX10.3.3/Ex10_3_3.sce b/3834/CH10/EX10.3.3/Ex10_3_3.sce
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+//Fiber-optics communication technology, by Djafer K. Mynbaev and Lowell L. Scheiner 

+//Example 10.3.3

+//windows 7

+//Scilab version-6.0.0

+clc;

+clear ;

+//given

+RIN=1E-16;//relative intensity in 1/Hz

+P=100E-6;//power received in W

+BW=100E+6;//Receiver bandwidth in Hz

+

+PN=sqrt(RIN*(P^2)*BW);//The average noise power detected by receiver W

+

+mprintf("The average noise power detected by receiver = %.2f uW",PN*1E+6);

+//multiplication by 1e6 to convert unit to W from uW 

diff --git a/3834/CH10/EX10.4.1/Ex10_4_1.jpg b/3834/CH10/EX10.4.1/Ex10_4_1.jpg
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diff --git a/3834/CH10/EX10.4.1/Ex10_4_1.sce b/3834/CH10/EX10.4.1/Ex10_4_1.sce
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+//Fiber-optics communication technology, by Djafer K. Mynbaev and Lowell L. Scheiner 

+//Example 10.4.1

+//windows 7

+//Scilab version-6.0.0

+clc;

+clear ;

+//given

+

+//case 1

+R=0.035;//Reflectivity for the air-silica interface

+NAt=0.275;//Typical Numerical Aperture in a GI multimode fiber

+D=1;//Ratio of the diameter of the fiber core to the diameter of the source

+X=2*(D^2);

+Y=1-1/X;

+ETAcgi=(NAt^2)*Y;//The amount of light coupling in a GI multimode fiber

+

+mprintf("The amount of light coupling in a GI multimode fiber is = %.3f",ETAcgi);

+

+//case 2

+NAt2=0.13;//Typical Numerical Aperture in a SI singlemode fiber

+EATcsi=NAt2^2;//The amount of light coupling in a SI singlemode fiber

+mprintf("\nThe amount of light coupling in a SI singlemode fiber is = %.3f",EATcsi);

+//the answers vary due to rounding