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author | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
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committer | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
commit | 7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch) | |
tree | dbb9e3ddb5fc829e7c5c7e6be99b2c4ba356132c /3828/CH12/EX12.1/Ex12_1.sce | |
parent | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff) | |
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diff --git a/3828/CH12/EX12.1/Ex12_1.sce b/3828/CH12/EX12.1/Ex12_1.sce new file mode 100644 index 000000000..e6c410bcb --- /dev/null +++ b/3828/CH12/EX12.1/Ex12_1.sce @@ -0,0 +1,17 @@ +//Chapter 12 : Semiconductor Physics + +clear; + +//Variable declaration +ni=2.5*10**19 //intrinsic concentration +myun=0.40 //mobility of electrons +myup=0.25 //mobility of holes +e=1.6*10**-19 + +//Calculations +sigmai=ni*e*(myun+myup) //conductivity of intrinsic semiconductor +rhoi=1/sigmai + +//Result +mprintf("Resistivity = %f ohm-m",rhoi) + |