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author | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
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committer | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
commit | 7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch) | |
tree | dbb9e3ddb5fc829e7c5c7e6be99b2c4ba356132c /3768/CH9/EX9.9/Ex9_9.sce | |
parent | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff) | |
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initial commit / add all books
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diff --git a/3768/CH9/EX9.9/Ex9_9.sce b/3768/CH9/EX9.9/Ex9_9.sce new file mode 100644 index 000000000..e6d61e131 --- /dev/null +++ b/3768/CH9/EX9.9/Ex9_9.sce @@ -0,0 +1,19 @@ +//Example number 9.9, Page number 206 + +clc;clear; +close; + +//Variable declaration +Eg=6.408*10**-20; //energy gap of semiconductor(J) +T1=273; //temperature(K) +T2=323; //temperature(K) +T3=373; //temperature(K) +KB=1.38*10**-23; //boltzmann constant +//Calculation +FE1=1/(1+exp(Eg/(2*KB*T1))); //probability of occupation at 0C(eV) +FE2=1/(1+exp(Eg/(2*KB*T2))); //probability of occupation at 50C(eV) +FE3=1/(1+exp(Eg/(2*KB*T3))); //probability of occupation at 100C(eV) +//Result +printf("probability of occupation at 0C is %.3e eV",FE1) +printf("\n probability of occupation at 50C is %.2e eV",FE2) +printf("\n probability of occupation at 100C is %.2e eV",FE3) |