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| author | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
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| committer | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
| commit | 7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch) | |
| tree | dbb9e3ddb5fc829e7c5c7e6be99b2c4ba356132c /3768/CH9/EX9.10 | |
| parent | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff) | |
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initial commit / add all books
Diffstat (limited to '3768/CH9/EX9.10')
| -rw-r--r-- | 3768/CH9/EX9.10/Ex9_10.sce | 16 |
1 files changed, 16 insertions, 0 deletions
diff --git a/3768/CH9/EX9.10/Ex9_10.sce b/3768/CH9/EX9.10/Ex9_10.sce new file mode 100644 index 000000000..3787b3e1d --- /dev/null +++ b/3768/CH9/EX9.10/Ex9_10.sce @@ -0,0 +1,16 @@ +//Example number 9.10, Page number 207 + +clc;clear; +close; + +//Variable declaration +Eg=1.9224*10**-19; //energy gap of semiconductor(J) +T1=600; //temperature(K) +T2=300; //temperature(K) +x=-1.666*10**-3; +KB=1.38*10**-23; //boltzmann constant +//Calculation +T=(1/T1)-(1/T2); +r=exp(x*(-Eg/(2*KB))); //ratio between conductivity +//Result +printf("ratio between conductivity is %.3e",r) |