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author | priyanka | 2015-06-24 15:03:17 +0530 |
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committer | priyanka | 2015-06-24 15:03:17 +0530 |
commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
tree | ab291cffc65280e58ac82470ba63fbcca7805165 /2882/CH7/EX7.1 | |
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initial commit / add all books
Diffstat (limited to '2882/CH7/EX7.1')
-rwxr-xr-x | 2882/CH7/EX7.1/Ex7_1.sce | 26 |
1 files changed, 26 insertions, 0 deletions
diff --git a/2882/CH7/EX7.1/Ex7_1.sce b/2882/CH7/EX7.1/Ex7_1.sce new file mode 100755 index 000000000..a48115874 --- /dev/null +++ b/2882/CH7/EX7.1/Ex7_1.sce @@ -0,0 +1,26 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 220
+clear;
+clc;
+
+//Given Data
+//Figure 7.7
+
+IDSS=15D-3;//drain saturation current in amperes
+VGS_cutoff=-5;//gate to source cutoff voltage in volts
+RD=300;//drain resistance in ohms
+
+//Solution
+
+VP=-VGS_cutoff;//pinch-off voltage in volts
+VDS=VP;//drain to source voltage in volts should be equal to VP or more than that for constant current region
+VGS=0;//gate to source voltage in volts
+ID=IDSS;//drain current in amperes is saturation current because VGS=0 volts
+VRD=ID*RD;//voltage drop across resistor
+VD_dash_min=VRD+VDS;//minimum source voltage required for constant current region in volts
+printf("Minimum VD'' required to place JFET into constant current region = %.1f Volts\n ",VD_dash_min);
+VD_dash=15;//given value of VD'
+if VD_dash>VD_dash_min then
+ ID=IDSS;//drain current in equal to saturation current
+end
+printf("Drain current for VD'' = %d Volts , ID = %d mA\n And increased voltage will appear as drop in drain source terminals.",VD_dash,ID*1000);
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