updated the code

2 files changed, 37 insertions, 34 deletions

diff --git a/284/CH8/EX8.1/ex_1.sce b/284/CH8/EX8.1/ex_1.sce
index a564c8681..2b4144341 100755
--- a/284/CH8/EX8.1/ex_1.sce
+++ b/284/CH8/EX8.1/ex_1.sce
@@ -1,13 +1,15 @@
-// Chapter 8_Metal Semiconductor and Semiconductor heterojunctions

-//Caption_Shottky barrier diode

-//Ex_1//page 308

-T=300    //temperature in kelvin

-Nd=10^16    //donor impurity

-phi_m=4.55    //metal work function for tungsten

-xi=4.01      //electron affinity for silicon

-phi_bo=phi_m-xi

-phi_n=0.0259*log(2.8*10^19/Nd)

-Vbi=phi_bo-phi_n

-xn=(2*eps*Vbi/(e*Nd))^0.5     //space charge width at zero bias

-Emax=e*Nd*xn/eps    //maximum electric field

+// Chapter 8_Metal Semiconductor and Semiconductor heterojunctions
+//Caption_Shottky barrier diode
+//Ex_1//page 308
+eps=13.1*8.85*10^-14;
+e = 1.6*10^-19;
+T=300    //temperature in kelvin
+Nd=10^16    //donor impurity
+phi_m=4.55    //metal work function for tungsten
+xi=4.01      //electron affinity for silicon
+phi_bo=phi_m-xi
+phi_n=0.0259*log(2.8*10^19/Nd)
+Vbi=phi_bo-phi_n
+xn=(2*eps*Vbi/(e*Nd))^0.5     //space charge width at zero bias
+Emax=e*Nd*xn/eps    //maximum electric field
 printf('Theoritical barrier height is %f V, built-in potential barrier is %f V and maximium electric field is %f V/cm', phi_bo,phi_n,Emax)
\ No newline at end of file
diff --git a/284/CH8/EX8.5/ex_5.sce b/284/CH8/EX8.5/ex_5.sce
index adf372723..01a4252f9 100755
--- a/284/CH8/EX8.5/ex_5.sce
+++ b/284/CH8/EX8.5/ex_5.sce
@@ -1,23 +1,24 @@
-// Chapter 8_Metal Semiconductor and Semiconductor heterojunctions

-//Caption_Comparison of the schottky barrier diode and the pn junction diode

-//Ex_5/page 319

-e_phi_bn=0.67

-A=114     //effective richardson constant

-T=300

-Jst=A*T^2*exp(-e_phi_bn/0.0259)

-//if we neglect the barrier lowering effect, we have for the schottky barrier diode

-//for a pn junction

-Na=10^18

-Nd=10^16

-Dp=10

-Dn=25

-tau_po=10^-7

-tau_no=10^-7

-Lp=(Dp*tau_po)^0.5

-Ln=(Dn*tau_no)^0.5

-pno=2.25*10^4

-npo=2.25*10^2

-//the ideal reverse saturation current density of the pn junction diode can be determined as

-Js=e*Dn*npo/Ln+(e*Dp*pno/Lp)

-J=10^9*(Js+5.7*10^-13)

+// Chapter 8_Metal Semiconductor and Semiconductor heterojunctions
+//Caption_Comparison of the schottky barrier diode and the pn junction diode
+//Ex_5/page 319
+e = 1.6*10^-19;
+e_phi_bn=0.67
+A=114     //effective richardson constant
+T=300
+Jst=A*T^2*exp(-e_phi_bn/0.0259)
+//if we neglect the barrier lowering effect, we have for the schottky barrier diode
+//for a pn junction
+Na=10^18
+Nd=10^16
+Dp=10
+Dn=25
+tau_po=10^-7
+tau_no=10^-7
+Lp=(Dp*tau_po)^0.5
+Ln=(Dn*tau_no)^0.5
+pno=2.25*10^4
+npo=2.25*10^2
+//the ideal reverse saturation current density of the pn junction diode can be determined as
+Js=e*Dn*npo/Ln+(e*Dp*pno/Lp)
+J=10^9*(Js+5.7*10^-13)
 printf('Reverse saturation current density for schottky baarier diode is %f A/cm^2 and for pn junction is %f nA/cm^2',Jst,J)
\ No newline at end of file