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author | prashantsinalkar | 2017-10-10 12:38:01 +0530 |
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committer | prashantsinalkar | 2017-10-10 12:38:01 +0530 |
commit | f35ea80659b6a49d1bb2ce1d7d002583f3f40947 (patch) | |
tree | eb72842d800ac1233e9d890e020eac5fd41b0b1b /2792/CH8 | |
parent | 7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (diff) | |
download | Scilab-TBC-Uploads-f35ea80659b6a49d1bb2ce1d7d002583f3f40947.tar.gz Scilab-TBC-Uploads-f35ea80659b6a49d1bb2ce1d7d002583f3f40947.tar.bz2 Scilab-TBC-Uploads-f35ea80659b6a49d1bb2ce1d7d002583f3f40947.zip |
updated the code
Diffstat (limited to '2792/CH8')
-rwxr-xr-x | 2792/CH8/EX8.7/Ex8_7.sce | 54 |
1 files changed, 27 insertions, 27 deletions
diff --git a/2792/CH8/EX8.7/Ex8_7.sce b/2792/CH8/EX8.7/Ex8_7.sce index e023d6cec..01198756e 100755 --- a/2792/CH8/EX8.7/Ex8_7.sce +++ b/2792/CH8/EX8.7/Ex8_7.sce @@ -1,27 +1,27 @@ -clc
-Nd = 5*10^16
-disp("Nd = "+string(Nd)+"cm^-3") //initializing value of channel doping
-L = 2*10^-4
-disp("L = "+string(L)+"cm") //initializing value of channel length
-apsilen = 13.2*8.85*10^-14
-disp("apsilen = "+string(apsilen)) //initializing value of relative permitivity
-VDS1 = 1.0
-disp("VDS1 = "+string(VDS1)+"V") //initializing value of drain bias voltage 1
-VDS2 = 1.5
-disp("VDS2 = "+string(VDS2)+"V") //initializing value of drain bias voltage 2
-VGS1 = 0
-disp("VGS1 = "+string(VGS1)+"V") //initializing value of gate bias voltage 1
-ID=4.03
-disp("ID(sat) = "+string(ID)+"mA") //initializing value of saturated current
-dL1 = sqrt((2*apsilen*VDS1)/(e*Nd))
-disp("The change in channel length is ,dL (VDS(sat)+1 V) = sqrt((2*apsilen*VDS1)/(e*Nd))= "+string(dL1)+"cm")//calculation
-dL2 = sqrt((2*apsilen*VDS2)/(e*Nd))
-disp("The change in channel length is ,dL (VDS(sat)+1.5 V) = sqrt((2*apsilen*VDS2)/(e*Nd))= "+string(dL2)+"cm")//calculation
-ID1 = ID*(1+(dL1/(2*L)))
-disp("The current at the bias is ,ID1(VDS(sat)+1 V) = ID*(1+(dL1/(2*L)))= "+string(ID1)+"mA")//calculation
-ID2 = ID*(1+(dL2/(2*L)))
-disp("The current at the bias is ,ID2(VDS(sat)+1.5 V) = ID*(1+(dL2/(2*L)))= "+string(ID2)+"mA")//calculation
-rDS = (VDS2-VDS1)/((ID2-ID1)*10^-3)
-disp("The output resistance of source drain channel is ,rDS = (VDS2-VDS1)/(ID2-ID1)= "+string(rDS)+"ohm")//calculation
-// Note : due to different precisions taken by me and the author ... my answer differ
-
+clc +Nd = 5*10^16; +e = 1.6*10^-19; +disp("Nd = "+string(Nd)+"cm^-3") //initializing value of channel doping +L = 2*10^-4 +disp("L = "+string(L)+"cm") //initializing value of channel length +apsilen = 13.2*8.85*10^-14 +disp("apsilen = "+string(apsilen)) //initializing value of relative permitivity +VDS1 = 1.0 +disp("VDS1 = "+string(VDS1)+"V") //initializing value of drain bias voltage 1 +VDS2 = 1.5 +disp("VDS2 = "+string(VDS2)+"V") //initializing value of drain bias voltage 2 +VGS1 = 0 +disp("VGS1 = "+string(VGS1)+"V") //initializing value of gate bias voltage 1 +ID=4.03 +disp("ID(sat) = "+string(ID)+"mA") //initializing value of saturated current +dL1 = sqrt((2*apsilen*VDS1)/(e*Nd)) +disp("The change in channel length is ,dL (VDS(sat)+1 V) = sqrt((2*apsilen*VDS1)/(e*Nd))= "+string(dL1)+"cm")//calculation +dL2 = sqrt((2*apsilen*VDS2)/(e*Nd)) +disp("The change in channel length is ,dL (VDS(sat)+1.5 V) = sqrt((2*apsilen*VDS2)/(e*Nd))= "+string(dL2)+"cm")//calculation +ID1 = ID*(1+(dL1/(2*L))) +disp("The current at the bias is ,ID1(VDS(sat)+1 V) = ID*(1+(dL1/(2*L)))= "+string(ID1)+"mA")//calculation +ID2 = ID*(1+(dL2/(2*L))) +disp("The current at the bias is ,ID2(VDS(sat)+1.5 V) = ID*(1+(dL2/(2*L)))= "+string(ID2)+"mA")//calculation +rDS = (VDS2-VDS1)/((ID2-ID1)*10^-3) +disp("The output resistance of source drain channel is ,rDS = (VDS2-VDS1)/(ID2-ID1)= "+string(rDS)+"ohm")//calculation +// Note : due to different precisions taken by me and the author ... my answer differ
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