initial commit / add all books

7 files changed, 190 insertions, 0 deletions

diff --git a/2792/CH6/EX6.1/Ex6_1.sce b/2792/CH6/EX6.1/Ex6_1.sce
new file mode 100755
index 000000000..c253f9b36
--- /dev/null
+++ b/2792/CH6/EX6.1/Ex6_1.sce
@@ -0,0 +1,12 @@
+clc

+e = 1.6*10^-19

+disp("e= "+string(e)+"C")//initializing value of charge of electron

+n = 10^22

+disp("n = "+string(n)+"cm^-3") //initializing value of electron density in current flow

+rho = 2.7*10^(-6)

+disp("rho = "+string(rho)+" ohm-cm") //initializing value of resistiviy of aluminium at room temperature

+disp("using following terms   J = Current density ; s(sigma) = 1/rho = conductivity ; F = Electric field ")

+disp("Using relations  J = s*F = n*e*v = n*e*u*F ; we get")

+mu_ = 1/(n*e*rho)

+disp("The mobility of electrons in aluminium is ,mu_ = 1/(n*e*r) = "+string(mu_)+" cm^2(Vs)^-1")//calculation

+//The answer given in the book is 240.4 cm^2/Vs which is wrong

diff --git a/2792/CH6/EX6.2/Ex6_2.sce b/2792/CH6/EX6.2/Ex6_2.sce
new file mode 100755
index 000000000..ea763da5b
--- /dev/null
+++ b/2792/CH6/EX6.2/Ex6_2.sce
@@ -0,0 +1,11 @@
+clc

+e = 1.6*10^-19

+disp("e= "+string(e)+"C")//initializing value of charge of electron

+apsilen = 11.9*8.85*10^-12

+disp("apsilen = "+string(apsilen)+"F/m") //initializing value of relative permitivity

+A= 7.85*10^-9

+disp("A= "+string(A)+"m^2") //initializing value of area 

+S= 3*10^24

+disp("d(1/c2)/dV = S= "+string(S)+"F^-2V^-1") //initializing value of area of slope of the (1/c2) vs V relation

+Nd = (2/(S*e*apsilen*(A^2)))

+disp("The doping density in silicon is ,Nd = (2/(S*e*Es*(A^2)))= "+string(Nd)+"m^-3")//calculation

diff --git a/2792/CH6/EX6.3/Ex6_3.sce b/2792/CH6/EX6.3/Ex6_3.sce
new file mode 100755
index 000000000..391e545e9
--- /dev/null
+++ b/2792/CH6/EX6.3/Ex6_3.sce
@@ -0,0 +1,42 @@
+clc

+Nd = 10^16

+disp("Nd = "+string(Nd)+"cm^-3") //initializing value of diode doping

+Nc = 2.8*10^19

+disp("Nc = "+string(Nd)+"cm^-3") //initializing value of channel doping

+kBT=0.026

+disp("kBT = "+string(kBT)+"eV") //initializing value of multiplication of boltzmann constant and 300K temperature

+Vf=0.3

+disp("Vf = "+string(Vf)+"V") //initializing value of forward bias

+e = 1.6*10^-19

+disp("e= "+string(e)+"C")//initializing value of charge of electron

+A= 10^-3

+disp("A= "+string(A)+"cm^2") //initializing value of area 

+disp("        for W-n type Si schottky barrier          ")

+T = 300

+disp("T= "+string(T)+"K")//initializing value of temperature

+phi_b = 0.67

+disp("schottky barrier heights(in volts) = phi_b= "+string(phi_b)+"eV")//initializing value of schottky barrier heights(in volts)

+R = 110

+disp("R* = "+string(R)+"Acm^-2K^-1") //initializing value of effective richardson constant

+Is = A*R*(T^2)*(exp(-(phi_b)/(kBT)))

+disp("The reverse saturation current is ,Is = A*R*(T^2)*(exp(-(phi_b/kbT))) = "+string(Is)+"A")//calculation

+disp("using relation I= Is*(exp((e*V)/(nkBT))-1) and neglecting 1")

+I = Is*(exp((Vf)/(kBT)))

+disp("The diode current is ,I = Is*(exp((Vf)/(kBT))) = "+string(I)+"A")//calculation

+disp("        for Si p+ -n junction diode          ")

+Na = 10^19

+disp("Na = "+string(Na)+"cm^-3") //initializing value of p+ doping

+Db = 10.5

+disp("Db= "+string(Db)+"cm^2/s")//initializing value of diffusion coefficient in the base

+Tb = 10^-6

+disp("Tb= "+string(Tb)+"s")//inializing value of electron lifetime

+Lb = sqrt(Db*Tb)

+disp("The electron carrier diffusion length is,Lb = sqrt(Db*Tb)= "+string(Lb)+"cm")//calculatio

+pn = 2.2*10^4

+disp("pn = "+string(pn)+"cm^-3") //initializing value of hole electron density 

+Io = A*e*pn*(Db/Lb)

+disp("The saturation current current is Io = A*e*pn*(Db/Lb) = "+string(Io)+"A")//calculation

+I1 = Io*(exp((Vf)/(kBT)))

+disp("The diode current for HBT is ,I = I0*(exp((Vf)/(kBT))) = "+string(I1)+"A")//calculation

+disp("Since diode current for HBT is almost 6 orders of magnitude smaller than the value in the Schottky diode ")

+disp("hence for the p-n diode to have the same current that the schottky dode has at .3 V , the voltage required is .71V")

diff --git a/2792/CH6/EX6.4/Ex6_4.sce b/2792/CH6/EX6.4/Ex6_4.sce
new file mode 100755
index 000000000..957b0a35d
--- /dev/null
+++ b/2792/CH6/EX6.4/Ex6_4.sce
@@ -0,0 +1,19 @@
+clc

+kBT=0.026

+disp("kBT = "+string(kBT)+"eV") //initializing value of multiplication of boltzmann constant and 300K temperature

+mo = 9.1*10^-31

+disp("mo = "+string(mo)+"kg") //initializing value of mass of electron

+m=0.08*mo

+disp("m = "+string(m)+"kg") //initializing value of mass of electron in InAlAs

+T = 300

+disp("T= "+string(T)+"K")//initializing value of temperature

+phi_b1 = 0.7

+disp("schottky barrier heights(in volts) = phi_b1= "+string(phi_b1)+"eV")//initializing value of schottky barrier heights(in volts)

+phi_b2 = 0.6

+disp("schottky barrier heights(in volts) = phi_b2= "+string(phi_b2)+"eV")//initializing value of schottky barrier heights(in volts)

+R = 120*(m/mo)

+disp("The effective richardson constant is ,R* = 120*(m/mo) = "+string(R)+" A cm^-2 k^-2")//calculation

+Js1 = R*(T^2)*(exp(-(phi_b1)/(kBT)))

+disp("The saturation current density is ,Js(phi_b=0.7) = R*(T^2)*(exp(-(phi_b)/(kBT))) = "+string(Js1)+"A/cm^2")//calculation

+Js2 = R*(T^2)*(exp(-(phi_b2)/(kBT)))

+disp("The saturation current density is ,Js(phi_b=0.6) = R*(T^2)*(exp(-(phi_b)/(kBT))) = "+string(Js2)+"A/cm^2")//calculation

diff --git a/2792/CH6/EX6.5/Ex6_5.sce b/2792/CH6/EX6.5/Ex6_5.sce
new file mode 100755
index 000000000..e13093d33
--- /dev/null
+++ b/2792/CH6/EX6.5/Ex6_5.sce
@@ -0,0 +1,48 @@
+clc

+apsilen = 11.9*8.85*10^-12

+disp("apsilen = "+string(apsilen)+"F/m") //initializing value of relative permitivity

+Nd = 10^16

+disp("Nd = "+string(Nd)+"cm^-3") //initializing value of diode doping

+Nc = 2.8*10^19

+disp("Nc = "+string(Nd)+"cm^-3") //initializing value of channel doping

+kBT = 0.026

+disp("kBT = "+string(kBT)+"eV") //initializing value of multiplication of boltzmann constant and 300K temperature

+I=10*10^-3

+disp("I = "+string(I)+"A") //initializing value of forward bias current

+e = 1.6*10^-19

+disp("e= "+string(e)+"C")//initializing value of charge of electron

+A= 10^-3

+disp("A= "+string(A)+"cm^2") //initializing value of area 

+disp("        for W-n type Si schottky barrier          ")

+T = 300

+disp("T= "+string(T)+"K")//initializing value of temperature

+phi_b = 0.67

+disp("schottky barrier heights(in volts) =phi_b= "+string(phi_b)+"eV")//initializing value of schottky barrier heights(in volts)

+R = 110

+disp("R* = "+string(R)+"Acm^-2K^-1") //initializing value of effective richardson constant

+Is = A*R*(T^2)*(exp(-(phi_b)/(kBT)))

+disp("The reverse saturation current is ,Is = A*R*(T^2)*(exp(-(Qb/kbT))) = "+string(Is)+"A")//calculation

+V = kBT*(log(I/Is))

+disp("The applied bias for schottky diode corresponding to 10mA forward current is,V = kBT*(log(I/Is))= "+string(V)+"V")//calculation

+E = kBT*log(Nc/Nd)

+disp("The fermi level positionin the neutral semiconductor(Efs) with respect to the conduction band is,Ec-Efs= E = kBT*log(Nc/Nd)= "+string(E)+" eV")//calculation

+Vbi= phi_b-(E)

+disp("The built in voltage is ,Vbi= phi_b-((1/e)*E)= "+string(Vbi)+"V")//calculation

+Cd = A*sqrt((e*Nd*apsilen)/(2*(Vbi-V)))

+disp("The diode capacitance is ,Cd = A*sqrt((e*Nd*apsilen)/(2*(Vbi-V))) = "+string(Cd)+"F")//calculation

+R = kBT/I

+disp("The resistance is ,R = kBT/I = "+string(R)+"ohm")//calculation

+RC = R*Cd

+disp("The RC time constant is ,RC(schottky) = R*Cd = "+string(RC)+"s")//calculation

+disp("        for Si p+ -n junction diode          ")

+Tb = 10^-6

+disp("Tb= "+string(Tb)+"s")//inializing value of electron lifetime

+disp("In the p-n diode the junction capacitance and the small signal resistance will be same as those in the schottky diode")

+Cdiff = ((I*Tb)/(kBT))

+disp("The diffusion capacitance is ,Cdiff = (I*Tb)/(kBT) = "+string(Cdiff)+"F")//calculation

+RC1 = R*Cdiff

+disp("The RC time constant is ,RC(p-n) = R*Cdiff = "+string(RC1)+"s")//calculation

+disp("From the above RC time constant value it can be concluded that p-n diode is almost 1000 times slower")

+// Note: due to approximation, the value of diode capicitance and diffusion capacitance are differ from that of the textbook

+

+

diff --git a/2792/CH6/EX6.6/Ex6_6.sce b/2792/CH6/EX6.6/Ex6_6.sce
new file mode 100755
index 000000000..381e1dfcf
--- /dev/null
+++ b/2792/CH6/EX6.6/Ex6_6.sce
@@ -0,0 +1,38 @@
+clc

+apsilen = 11.9*8.85*10^-14

+disp("apsilen = "+string(apsilen)+"F/m") //initializing value of relative permitivity

+phi_b = 0.66

+disp("schottky barrier heights(in volts) = phi_b= "+string(phi_b)+"eV")//initializing value of schottky barrier heights(in volts)

+mo = 9.1*10^-31

+disp("mo = "+string(mo)+"kg") //initializing value of mass of electron

+m=0.34*mo

+disp("m* = "+string(m)+"kg") //initializing value of density of state mass

+e = 1.6*10^-19

+disp("e= "+string(e)+"C")//initializing value of charge of electron

+h = 1.05*10^-34

+disp("h= "+string(h)+"C")//initializing value of h_cut 

+n1 = 10^18

+disp("n= "+string(n1)+"cm^-3") //initializing value of silicon doping

+n2 = 10^20

+disp("n= "+string(n2)+"cm^-3") //initializing value of silicon doping

+disp("Assume that the built in potential Vbi is same as barrier potential becouse of highly doped semiconductor")

+W1 = (sqrt((2*apsilen*phi_b)/(e*n1)))/10^-8

+disp("The depletion width is ,W(n=10^18) = sqrt((2*apsilen*Vbi)/(e*n)) = "+string(W1)+" Angstrom")//calculation

+W2 = (sqrt((2*apsilen*phi_b)/(e*n2)))/10^-8

+disp("The depletion width is ,W(n=10^20) = sqrt((2*apsilen*Vbi)/(e*n)) = "+string(W2)+" Angstrom")//calculation

+F1 = phi_b/(W1*10^-8)

+disp("The average field in depletion region for(n=10^18), F1 = phi_b/(W1/10^-8)=   "+string(F1)+"V/cm")

+F2 = phi_b/(W2*10^-8)

+disp("The average field in depletion region for(n=10^18), F2 = phi_b/(W2/10^-8)=   "+string(F2)+"V/cm")

+F1 = F1/10^-2

+F2 = F2/10^-2

+T = exp(-(4*(2*m)^.5*(e*phi_b)^(3/2))/(3*e*F1*h))

+disp("The tunneling current for(n=10^18),T = exp(-(4*(2*m)^.5*(e*phi_b)^(3/2))/(3*e*F1*h))="+string(T)+"V/cm")

+T1 = exp(-(4*(2*m)^.5*(e*phi_b)^(3/2))/(3*e*F2*h))

+disp("The tunneling current for(n=10^20), T1 = exp(-(4*(2*m)^.5*(e*phi_b)^(3/2))/(3*e*F2*h))="+string(T1)+"V/cm")

+

+// in the textbook author has used approximate value for depletion width and hence it affect the value of all other answer

+// NOTE: In the textbook author has used approximate answer for tunneling current

+

+

+

diff --git a/2792/CH6/EX6.7/Ex6_7.sce b/2792/CH6/EX6.7/Ex6_7.sce
new file mode 100755
index 000000000..6d837f2c7
--- /dev/null
+++ b/2792/CH6/EX6.7/Ex6_7.sce
@@ -0,0 +1,20 @@
+clc

+n = 10^18

+disp("n= "+string(n)+"cm^-3") //initializing value of doping

+W = 25*10^-4

+disp("W= "+string(W)+"cm") //initializing value of width of the resistor

+R = 100*10^3

+disp("R = "+string(R)+"ohm") //initializing value of resistance

+e = 1.6*10^-19

+disp("e= "+string(e)+"C")//initializing value of charge of electron

+D= 5000*10^-8

+disp("D= "+string(D)+"cm") //initializing value of thickness of film 

+mu_=100

+disp("mu_= "+string(mu_)+"cm^2(Vs)^-1") //initializing value of mobility

+Ro = 1/(n*e*mu_*D)

+disp("The sheet resistance of the film is ,Ro = 1/(n*e*mu_*D) = "+string(Ro)+" ohm/square")//calculation

+L = (R*W)/Ro

+disp("The length of the desired resistor is ,L = (R*W)/Ro = "+string(L)+" cm")//calculation

+

+

+