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author | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
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committer | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
commit | 7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch) | |
tree | dbb9e3ddb5fc829e7c5c7e6be99b2c4ba356132c /2702/CH2/EX2.3 | |
parent | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff) | |
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Diffstat (limited to '2702/CH2/EX2.3')
-rw-r--r-- | 2702/CH2/EX2.3/Ex_2_3.sce | 23 |
1 files changed, 23 insertions, 0 deletions
diff --git a/2702/CH2/EX2.3/Ex_2_3.sce b/2702/CH2/EX2.3/Ex_2_3.sce new file mode 100644 index 000000000..2e39ca48a --- /dev/null +++ b/2702/CH2/EX2.3/Ex_2_3.sce @@ -0,0 +1,23 @@ +// Exa 2.3
+clc;
+clear;
+close;
+// Given data
+Vt= 0.7;// in V
+I_D= 100;// in µA
+I_D=I_D*10^-6;// in A
+// When
+V_GS= 1.2;// in V
+V_DS= V_GS;// in V
+// At this condition, device is in saturation region, so I_D= unCox*W/(2*L)*(V_GS-VT)^2
+unCoxWby2L= I_D/(V_GS-Vt)^2;
+// For
+V_DS= 3;// in V
+V_GS= 1.5;// in V
+// In this condition, device is in saturation region, so
+I_D= unCoxWby2L*(V_GS-Vt)^2;// in A
+disp(I_D*10^6,"For V_DS= 3V and V_GS= 1.5 V, The value of I_D in µA is : ")
+// For
+V_GS= 3.2;// in V
+r_DS= 1/(2*unCoxWby2L*(V_GS-Vt));// in Ω
+disp(r_DS,"For V_GS = 3.2 V, Drain to source resistance in Ω is : ")
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