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+// Exa 1.7

+clc;

+clear;

+close;

+format('v',6)

+// Given data

+miu_n = 3800;// cm^2/V-s

+miu_p = 1800;//  cm^2/V-s

+n_i = 2.5*10^13;// in /cm^3

+Nge = 4.41*10^22;// in /cm^3

+q = 1.602*10^-19;// in C

+impurity = 10^8;

+// The number of donor atoms,

+N_D = Nge/impurity;//in /cm^3

+// The number of holes

+p = (n_i^2)/N_D;// in /cm^3

+// Conductivity of an N-type Ge,

+sigma = q*N_D*miu_n;// in (ohm-cm)^-1

+// The resistivity of the Ge

+rho = 1/sigma;// in ohm-cm

+disp(rho,"The resistivity of a dopped Ge in ohm-cm is");