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authorpriyanka2015-06-24 15:03:17 +0530
committerpriyanka2015-06-24 15:03:17 +0530
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+//To calculate the resistance
+ni = 2.5*10^19; //intrinsic carrier density, per m^3
+mew_e = 0.39; //electron mobility, m^2/Vs
+mew_h = 0.19; //hole mobility, m^2/Vs
+e = 1.6*10^-19;
+sigma_i = ni*e*(mew_e+mew_h); //conductivity, ohm-1 m-1
+w = 1; //width, mm
+w = w*10^-3; //width, m
+t = 1; //thickness, mm
+t = t*10^-3; //thickness, m
+A = w*t; //area, m^2
+l = 1; //length, cm
+l = l*10^-2; //length, m
+R = l/(sigma_i*A); //resistivity, ohm m
+printf("resistance of intrinsic Ge rod is %5.1f ohm",R);