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authorpriyanka2015-06-24 15:03:17 +0530
committerpriyanka2015-06-24 15:03:17 +0530
commitb1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch)
treeab291cffc65280e58ac82470ba63fbcca7805165 /2375/CH5
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initial commit / add all books
Diffstat (limited to '2375/CH5')
-rwxr-xr-x2375/CH5/EX5.1/ex5_1.sce35
-rwxr-xr-x2375/CH5/EX5.2/ex5_2.sce46
-rwxr-xr-x2375/CH5/EX5.3/ex5_3.sce25
-rwxr-xr-x2375/CH5/EX5.4/ex5_4.sce28
-rwxr-xr-x2375/CH5/EX5.5/ex5_5.sce12
-rwxr-xr-x2375/CH5/EX5.6/ex5_6.sce20
6 files changed, 166 insertions, 0 deletions
diff --git a/2375/CH5/EX5.1/ex5_1.sce b/2375/CH5/EX5.1/ex5_1.sce
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@@ -0,0 +1,35 @@
+// Exa 5.1
+clc;
+clear;
+close;
+format('v',6)
+// Given data
+I_C = 2;// in mA
+I_C =I_C * 10^-3;// in A
+V_CEQ = 20;// in V
+h_fe = 100;
+I_BQ = 20;// in µA
+I_BQ = I_BQ * 10^-6;// in A
+Beta = 100;
+f_T = 50;// in MHz
+f_T = f_T * 10^6;// in Hz
+Cob = 3;// in pF
+Cob = Cob * 10^-12;// in F
+h_ie = 1400;// in ohm
+T = 300;// in K
+// (i) Transconductance
+g_m = 11600*(I_C/T);// in S
+g_m=g_m*10^6;// in µS
+disp(g_m,"The transconductance in µS is");
+// (ii) Input resistance
+g_m=g_m*10^-6;// in S
+r_be = h_fe/g_m; //in ohm
+disp(r_be,"The input resistance in ohm is");
+// (iii) Capacitance
+Cbc = Cob ;// in F
+Cbe = g_m/(2*%pi*f_T)-Cbc;// in F
+Cbe= round(Cbe*10^12);// in pF
+disp(Cbe,"The capacitance in pF is");
+// (iv) Base Spreading Resistance
+r_bb = round(h_ie - r_be);// in ohm
+disp(r_bb,"The base spreading resistance in ohm is");
diff --git a/2375/CH5/EX5.2/ex5_2.sce b/2375/CH5/EX5.2/ex5_2.sce
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+// Exa 5.2
+clc;
+clear;
+close;
+format('v',6)
+// Given data
+I_C = 10;// in mA
+I_C =I_C * 10^-3;// in A
+V_CE = 10;// in V
+V_T= 26*10^-3;// in V
+h_ie = 500;// in ohm
+h_oe = 4*10^-5;// in S
+h_fe = 100;
+g_be = 1/260;
+h_re = 10^-4;
+f_T = 50;// in MHz
+f_T = f_T * 10^6;// in Hz
+T = 300;// in K
+Cob =3;// in pF
+Cob = Cob * 10^-12;// in F
+// (i) Transconductance
+g_m = I_C/V_T;// in A/V
+g_m= round(g_m*10^3);// in mA/V
+disp(g_m,"The Transconductance in mA/V is");
+// (ii) Input resistance
+g_m= g_m*10^-3;// in A/V
+r_be = round(h_fe/g_m);// in ohm
+disp(r_be,"The input resistance in ohm is");
+// (iii) Base spreading resistance
+r_bb = h_ie - r_be;// in ohm
+disp(r_bb,"The base spreading resistance in ohm is");
+// (iv) The feedback conductance
+format('e',8)
+g_bc = h_re*g_be;
+disp(g_bc,"The feedback conductance is");
+// (v) The output conductance
+g_ce = h_oe - (1+h_fe)*g_bc
+disp(g_ce,"The output conductance is : ")
+// (vi) Capacitance
+format('v',6)
+Cbe= g_m/(2*%pi*f_T);// in F
+Cbe= Cbe*10^12;// in pF
+disp(Cbe,"The value of C_b''e in pF is : ")
+Cc= Cob;// in F
+Cc= Cc*10^12
+disp(Cc,"The value of Cc in pF is : ")
diff --git a/2375/CH5/EX5.3/ex5_3.sce b/2375/CH5/EX5.3/ex5_3.sce
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+// Exa 5.3
+clc;
+clear;
+close;
+format('v',5)
+// Given data
+W = 10^-6;// in m
+I_E =2;// in mA
+I_E = I_E * 10^-3;// in A
+V_T = 26;// in mV
+V_T = V_T * 10^-3;// in V
+D_B = 47*10^-4;
+//g_m = abs(I_C)/V_T = abs(I_E)/V_T;
+// The emitter diffusion capacitance, Cbe = g_m*((W^2)/(2*D_B));
+Cbe = I_E/V_T*W^2/(2*D_B);// F
+Cbe= Cbe*10^12;// in pF
+disp(Cbe,"The emitter diffusion capacitance in pF is");
+Cbe= Cbe*10^-12;// in F
+g_m = abs(I_E)/V_T;
+// The transition frequency
+f_T = g_m/(2*%pi*Cbe);// in Hz
+f_T = f_T * 10^-6;// in MHz
+disp(f_T,"The transition frequency in MHz is");
+
+// Note: The answer in the book is not accurate.
diff --git a/2375/CH5/EX5.4/ex5_4.sce b/2375/CH5/EX5.4/ex5_4.sce
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index 000000000..148dea91b
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+// Exa 5.4
+clc;
+clear;
+close;
+// Given data
+I_CQ = 5;// in mA
+I_CQ = I_CQ * 10^-3;// in A
+V_VEQ = 10;// in V
+h_ie = 600;// in ohm
+h_fe = 100;
+C_C = 3;// in pF
+C_C = C_C * 10^-12;// in F
+Ai = 10;// Ai(f)
+f = 10;// in MHz
+// Ai = h_fe/( sqrt( 1 + ((f/f_Beta)^2) ) );
+f_Beta = f/(sqrt( ((h_fe/Ai)^2) - 1 ));// in MHz
+disp(f_Beta,"The Beta cut off frequency in MHz is");
+f_T = h_fe*f_Beta;// in MHz
+disp(f_T,"The gain bandwidth product in MHz is");
+g_m = 0.1923;
+Ce = g_m/(2*%pi*f_T*10^6);// in F
+disp(Ce,"The value of Ce in F is");
+Cbe= Ce;// in F
+disp(Cbe*10^12,"The value of C_b''e in pF is : ")
+r_be = h_fe/g_m;// in ohm
+disp(r_be,"The value of r_b''e in ohm is");
+r_bb = h_ie - r_be;// in ohm
+disp(r_bb,"The value of r_bb'' in ohm is");
diff --git a/2375/CH5/EX5.5/ex5_5.sce b/2375/CH5/EX5.5/ex5_5.sce
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index 000000000..d109aebe0
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+// Exa 5.5
+clc;
+clear;
+close;
+// Given data
+f_T = 400;// in MHz
+D_Beta = 13;// in cm^2/sec
+//Ce = (g_m*(W^2))/(2*D_B), so
+//f_T = (g_m/(2*%pi))*( (2*D_B)/(g_m*(W^2)) ) = D_B/(%pi*(W^2));
+W = sqrt( D_Beta/(%pi*f_T*10^6) );// in cm
+W = W * 10^4;// in µm
+disp(W,"The base width of silicon transistor in µm is");
diff --git a/2375/CH5/EX5.6/ex5_6.sce b/2375/CH5/EX5.6/ex5_6.sce
new file mode 100755
index 000000000..0ba2a84ee
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@@ -0,0 +1,20 @@
+// Exa 5.6
+clc;
+clear;
+close;
+format('v',5)
+// Given data
+D_B = 47;// in cm^2/sec
+I_C = 2;// in mA
+I_C = I_C * 10^-3;// in A
+V_CEQ = 15;// in V
+W = 1;// in µm
+W = W * 10^-4;// in cm
+V_T = 0.026;// in V
+g_m =I_C/(abs(V_T));// in ohm
+Ce = (g_m*(W^2))/(2*D_B);// in F
+Ce = Ce * 10^12;// in pF
+disp(Ce,"The value of Ce in pF is");
+f_T = g_m/(2*%pi*Ce*10^-12);// in Hz
+f_T = f_T * 10^-6;// in MHz
+disp(f_T,"The value of f_T in MHz is");