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authorpriyanka2015-06-24 15:03:17 +0530
committerpriyanka2015-06-24 15:03:17 +0530
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+// EXa 3.10.1
+clc;
+clear;
+close;
+// Given data
+t = 4.4 * 10^22;// total number of Ge atoms/cm^3
+n = 1 * 10^8;// number of impurity atoms
+N_A = t/n;// in atoms/cm^3
+N_A = N_A * 10^6;// in atoms/m^3
+N_D = N_A * 10^3;// in atoms/m^3
+n_i = 2.5 * 10^13;// in atoms/cm^3
+n_i = n_i * 10^6;// in atoms/m^3
+V_T = 26;//in mV
+V_T= V_T*10^-3;// in V
+V_J = V_T * log((N_A * N_D)/(n_i)^2);// in V
+disp(V_J,"The contact potential in V is");
+// Part (b)
+t = 5* 10^22;// total number of Si atoms/cm^3
+N_A = t/n;// in atoms/cm^3
+N_A = N_A * 10^6;// in atoms/m^3
+N_D = N_A * 10^3;// in atoms/m^3
+n_i = 1.5 * 10^10;// in atoms/cm^3
+n_i = n_i * 10^6;// in atoms/m^3
+V_T = 26;//in mV
+V_T= V_T*10^-3;// in V
+V_J = V_T * log((N_A * N_D)/(n_i)^2);// in V
+disp(V_J,"The contact potential in V is");