initial commit / add all books

14 files changed, 212 insertions, 0 deletions

diff --git a/1931/CH10/EX10.1/1.sce b/1931/CH10/EX10.1/1.sce
new file mode 100755
index 000000000..1ecac4b1d
--- /dev/null
+++ b/1931/CH10/EX10.1/1.sce
@@ -0,0 +1,13 @@
+clc

+clear

+//INPUT DATA

+ec=4*10^-4//electrical conductivity of intrinsic silicon at room temperature in ohm^-1 m^-1

+me=0.14//The electron mobility in m^2 V^-1 s^-1

+mh=0.04//The hole mobility in m^2 V^-1 s^-1

+e=1.6*10^-19//charge of electron in coulombs

+

+//CALCULATION

+ni=(ec/(e*(me+mh)))/10^16//The intrinsic carrier concentration at room temperature in m^-3 *10^16

+

+//OUTPUT

+printf('The intrinsic carrier concentration at room temperature is %3.3f *10^16.m^-3 \n Since ne=nh=ni from law of mass action the electron and hole concentrations are 1.33*10^16.m^-3',ni)

diff --git a/1931/CH10/EX10.10/10.sce b/1931/CH10/EX10.10/10.sce
new file mode 100755
index 000000000..af53d1aaf
--- /dev/null
+++ b/1931/CH10/EX10.10/10.sce
@@ -0,0 +1,15 @@
+clc

+clear

+//INPUT DATA

+Eg=0.72*1.6*10^-19//The band gap of Ge in J

+T1=293//Temperature in K

+T2=313//Temperature in K

+x1=2//The conductivity of Ge at T1 in ohm^-1 m^-1

+e=1.6*10^-19//charge of electron in coulombs

+kb=1.38*10^-23//Boltzmann's constant m^2 Kg s^-2 k^-1

+

+//CALCULATION

+x2=x1*(exp((Eg/(2*kb))*((1/T1)-(1/T2))))//The ratio of conductiveness

+

+//OUTPUT

+printf('The conductivity of Ge at T2 is %3.4f ohm^-1 m^-1',x2)

diff --git a/1931/CH10/EX10.11/11.sce b/1931/CH10/EX10.11/11.sce
new file mode 100755
index 000000000..2f7194aa4
--- /dev/null
+++ b/1931/CH10/EX10.11/11.sce
@@ -0,0 +1,15 @@
+clc

+clear

+//INPUT DATA

+Eg1=0.36//The energy gap of intrinsic semiconductor A in eV

+Eg2=0.72//The energy gap of intrinsic semiconductor B in eV

+T1=300//Temperature of semiconductor A in K

+T2=300//Temperature of semiconductor B in K

+m=9.11*10^-31//mass of an electron in Kg

+KT=0.026//kt in eV

+

+//CALCULATION

+x=(exp((Eg2-Eg1)/(2*KT)))//The intrinsic carrier density of A to B

+

+//OUTPUT

+printf('The intrinsic carrier density of A to B is %i',x)

diff --git a/1931/CH10/EX10.12/12.sce b/1931/CH10/EX10.12/12.sce
new file mode 100755
index 000000000..13fb0be9b
--- /dev/null
+++ b/1931/CH10/EX10.12/12.sce
@@ -0,0 +1,15 @@
+clc

+clear

+//INPUT DATA

+T1=293//Temperature in K

+T2=373//Temperature in K

+x1=250//The conductivity of semiconductor at T1 in ohm^-1 m^-1

+x2=1100//The conductivity of semiconductor at T2 in ohm^-1 m^-1

+e=1.6*10^-19//charge of electron in coulombs

+kb=1.38*10^-23//Boltzmann's constant m^2 Kg s^-2 k^-1

+

+//CALCULATION

+Eg=(2*kb*log(x2/x1)*((T1*T2)/(T2-T1)))/10^-20//The band gap of semiconductor in J*10^-20

+

+//OUTPUT

+printf('The band gap of semiconductor is %3.4f*10^-20 J',Eg)

diff --git a/1931/CH10/EX10.13/13.sce b/1931/CH10/EX10.13/13.sce
new file mode 100755
index 000000000..781af8571
--- /dev/null
+++ b/1931/CH10/EX10.13/13.sce
@@ -0,0 +1,12 @@
+clc

+clear

+//INPUT DATA

+me=50//The electron mobility of pure semi conductor in m^2 V^-1 s^-1

+t1=4.2//temp of pure semi conductor in k

+t2=300//temp in k

+

+//CALCULATION

+m=me*((t2^(-3/2))/(t1^(-3/2)))//mobility of pure semi conductor in m^2 V^-1 s^-1

+

+//OUTPUT

+printf('mobility of pure semi conductor is %3.6f m^2 V^-1 s^-1',m)

diff --git a/1931/CH10/EX10.14/14.sce b/1931/CH10/EX10.14/14.sce
new file mode 100755
index 000000000..9f791cbd1
--- /dev/null
+++ b/1931/CH10/EX10.14/14.sce
@@ -0,0 +1,14 @@
+clc

+clear

+//INPUT DATA

+ec1=19.96//The electrical conductivity of an intrinsic semi conductor in ohm^-1 m^-1

+ec2=79.44//The increasing electrical conductivity of an intrinsic semi conductor in ohm^-1 m^-1

+t1=333//temperature of an intrinsic semi conductor in k

+t2=373//increasing temperature of an intrinsic semi conductor in k

+kb=1.38*10^-23//Boltzmann's constant in m^2 Kg s^-2 k^-1

+

+//CALCULATION

+Eg=(2*kb*(log(ec2/ec1))*((t1*t2)/(t2-t1)))/10^-19//The band gap of an intrinsic semi conductor in J*10^-19

+

+//OUTPUT

+printf('The band gap of an intrinsic semi conductor is %3.6f*10^-19 J',Eg)

diff --git a/1931/CH10/EX10.2/2.sce b/1931/CH10/EX10.2/2.sce
new file mode 100755
index 000000000..93a407361
--- /dev/null
+++ b/1931/CH10/EX10.2/2.sce
@@ -0,0 +1,13 @@
+clc

+clear

+//INPUT DATA

+d=2.37*10^19//The intrinsic carrier density at room temperature in m^-3

+me=0.38//The electron mobility in m^2 V^-1 s^-1

+mh=0.18//The hole mobility in m^2 V^-1 s^-1

+e=1.6*10^-19//charge of electron in coulombs

+

+//CALCULATION

+r=(1/(d*e*(me+mh)))//The resistivity of intrinsic carrier in ohm m

+

+//OUTPUT

+printf('The resistivity of intrinsic carrier is %3.4f ohm m',r)

diff --git a/1931/CH10/EX10.3/3.sce b/1931/CH10/EX10.3/3.sce
new file mode 100755
index 000000000..0a0a7ddf2
--- /dev/null
+++ b/1931/CH10/EX10.3/3.sce
@@ -0,0 +1,13 @@
+clc

+clear

+//INPUT DATA

+r=2*10^-4//the resistivity of In-Sb in ohm m

+me=6//The electron mobility in m^2 V^-1 s^-1

+mh=0.2//The hole mobility in m^2 V^-1 s^-1

+e=1.6*10^-19//charge of electron in coulombs

+

+//CALCULATION

+d=(1/(r*e*(me+mh)))/10^21//The intrinsic carrier density at room tepmerature in m^-3 *10^21

+

+//OUTPUT

+printf('The intrinsic carrier density at room tepmerature is %3.3f *10^21 m^-3',d)

diff --git a/1931/CH10/EX10.4/4.sce b/1931/CH10/EX10.4/4.sce
new file mode 100755
index 000000000..372deb7aa
--- /dev/null
+++ b/1931/CH10/EX10.4/4.sce
@@ -0,0 +1,18 @@
+clc

+clear

+//INPUT DATA

+Eg=1.1*1.6*10^-19//The energy gap of silicon in J

+me=0.48//The electron mobility in m^2 V^-1 s^-1

+mh=0.13//The hole mobility in m^2 V^-1 s^-1

+h=6.625*10^-34//Planck's constant in m^2 Kg /sec

+e=1.6*10^-19//charge of electron in coulombs

+m=9.11*10^-31//mass of an electron

+kb=1.38*10^-23//Boltzmann's constant m^2 Kg s^-2 k^-1

+t=300//temperature in k

+

+//CALCULATION

+ni=2*((2*3.14*m*kb*t)/h^2)^(3/2)*exp(-Eg/(2*kb*t))//intrinsic carrier concentration in m^-3

+ec=(ni*e*(me+mh))/10^-3//The electrical conductivity at room temperature in ohm^-1 m^-1 *10^-3

+

+//OUTPUT

+printf('The electrical conductivity at room temperature is %3.4f *10^-3 ohm^-1 m^-1',ec)

diff --git a/1931/CH10/EX10.5/5.sce b/1931/CH10/EX10.5/5.sce
new file mode 100755
index 000000000..1359ff5a7
--- /dev/null
+++ b/1931/CH10/EX10.5/5.sce
@@ -0,0 +1,20 @@
+clc

+clear

+//INPUT DATA

+Eg=1.43*1.6*10^-19//The energy gap of intrinsic GaAs in J

+xe=0.85//The electron mobility in m^2 V^-1 s^-1

+xh=0.04//The hole mobility in m^2 V^-1 s^-1

+me=0.068*9.11*10^-31//effective mass of electron in m

+mh=0.5*9.11*10^-31//effective mass of hole in m

+h=6.625*10^-34//Planck's constant in m^2 Kg /sec

+e=1.6*10^-19//charge of electron in coulombs

+m=9.11*10^-31//mass of an electron in Kg

+kb=1.38*10^-23//Boltzmann's constant m^2 Kg s^-2 k^-1

+t=300//temperature in k

+

+//CALCULATION

+ni=(2*((2*3.14*kb*t)/h^2)^(3/2)*(me*mh)^(3/4)*exp(-Eg/(2*kb*t)))/10^12//intrinsic carrier concentration in m^-3*10^12

+ec=(ni*10^12*e*(xe+xh))/10^-7//The electrical conductivity at room temperature in ohm^-1 m^-1 *10^-7

+

+//OUTPUT

+printf('The intrinsic carrier concentration is %3.4f*10^12 m^-3 \n The electrical conductivity at room temperature is %3.4f *10^-7 ohm^-1 m^-1',ni,ec)

diff --git a/1931/CH10/EX10.6/6.sce b/1931/CH10/EX10.6/6.sce
new file mode 100755
index 000000000..3687c3044
--- /dev/null
+++ b/1931/CH10/EX10.6/6.sce
@@ -0,0 +1,16 @@
+clc

+clear

+//INPUT DATA

+Eg=1.12*1.6*10^-19//Energy gap of Si semi conductor in J

+me=0.12*9.11*10^-31//The electron mobility in m^2 V^-1 s^-1

+mh=0.28*9.11*10^-31//The hole mobility in m^2 V^-1 s^-1

+t=300//temperature of fermi level in k

+kb=1.38*10^-23//Boltzmann's constant m^2 Kg s^-2 k^-1

+m=9.11*10^-31//mass of an electron in Kg

+

+//CALCULATION

+Ef=((Eg/2)+(((3*kb*t)/4)*log(mh/me)))/10^-20//position of the fermi level in J *10^-20

+

+//OUTPUT

+printf('The position of the fermi level is %3.5f*10^-20 J',Ef)

+

diff --git a/1931/CH10/EX10.7/7.sce b/1931/CH10/EX10.7/7.sce
new file mode 100755
index 000000000..0418f185a
--- /dev/null
+++ b/1931/CH10/EX10.7/7.sce
@@ -0,0 +1,15 @@
+clc

+clear

+//INPUT DATA

+Eg=1*1.6*10^-19//Energy gap in J

+E=0.1*1.6*10^-19//Fermi level is shifted by 10% in J

+me=1*9.11*10^-31//The electron mobility in m^2 V^-1 s^-1

+mh=4*9.11*10^-31//Effective mass of holes is 4 times that of electrons that is the hole mobility in m^2 V^-1 s^-1

+m=9.11*10^-31//mass of an electron in Kg

+kb=1.38*10^-23//Boltzmann's constant m^2 Kg s^-2 k^-1

+

+//CALCULATION

+T=(4*E)/(3*kb*log(4))//The Temperature of the fermi level shifted by 10% from the middle of the forbidden energy gap in K

+

+//OUTPUT

+printf('The Temperature of the fermi level shifted by 10percentage from the middle of the forbidden energy gap is %3.2f K',T)

diff --git a/1931/CH10/EX10.8/8.sce b/1931/CH10/EX10.8/8.sce
new file mode 100755
index 000000000..91b5cc970
--- /dev/null
+++ b/1931/CH10/EX10.8/8.sce
@@ -0,0 +1,19 @@
+clc

+clear

+//INPUT DATA

+l=1*10^-2//length of the intrinsic Ge rod in m

+b=1*10^-3//breadth of the intrinsic Ge rod in m

+t=1*10^-3//thickness of the intrinsic Ge rod in m

+T=300//temperature of the intrinsic Ge rod in K

+me=0.39//The electron mobility in m^2 V^-1 s^-1

+mh=0.19//The hole mobility in m^2 V^-1 s^-1

+ni=2.5*10^19//intrinsic carrier conduction in m^3

+e=1.6*10^-19//charge of electron in coulombs

+

+//CALCULATION

+ec=(ni*e*(me+mh))//The electrical conductivity at room temperature in ohm^-1 m^-1

+A=(b*t)//area in m^2

+R=(l/(ec*A))//The resistance of an intrinsic Ge rod in ohm

+

+//OUTPUT

+printf('The resistance of an intrinsic Ge rod is %i ohm',R)

diff --git a/1931/CH10/EX10.9/9.sce b/1931/CH10/EX10.9/9.sce
new file mode 100755
index 000000000..b5fe1d0d5
--- /dev/null
+++ b/1931/CH10/EX10.9/9.sce
@@ -0,0 +1,14 @@
+clc

+clear

+//INPUT DATA

+Eg=1.2*1.6*10^-19//The energy gap of intrinsic semiconductor in J

+T1=600//Temperature in K

+T2=300//Temperature in K

+e=1.6*10^-19//charge of electron in coulombs

+kb=1.38*10^-23//Boltzmann's constant m^2 Kg s^-2 k^-1

+

+//CALCULATION

+x=exp((-Eg/(2*kb))*((1/T1)-(1/T2)))/10^5//The ratio of conductiveness*10^5

+

+//OUTPUT

+printf('The ratio of conductiveness is %3.2f*10^5',x)