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authorpriyanka2015-06-24 15:03:17 +0530
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+// Example 10.8, page no-272
+clear
+clc
+
+T=300//K
+rho=2.12//ohm-m
+mue=0.36//m^2/V-s
+muh=0.17
+e=1.6*10^-19//C
+m=9.1*10^-31//kg
+h=6.626*10^-34
+sig=1/rho
+ni=sig/(e*(muh+mue))
+printf("\nConductivity = %.6f per Ohm-m\nIntrinsic carrier concentration, ni=%.5f*10^18",sig,ni*10^-18)
+
+k=1.38*10^-23
+Nc=2*(2*%pi*k*T/h^(2))^(1.5)
+Nc=Nc*(0.5*m)^(1.5)
+Nv=2*(2*%pi*k*T/h^(2))^(1.5)
+Nv=Nv*(0.37*m)^(1.5)
+printf("\nNc=%.3f*10^24\nNv=%.3f*10^24",Nc*10^-24,Nv*10^-24)
+eg=2*k*T*log(sqrt(Nc*Nv)/ni)
+eg=eg/e
+printf("\nThe band gap of Ge is %.3f eV",eg)