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author | priyanka | 2015-06-24 15:03:17 +0530 |
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committer | priyanka | 2015-06-24 15:03:17 +0530 |
commit | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch) | |
tree | ab291cffc65280e58ac82470ba63fbcca7805165 /1736/CH6/EX6.10/Ch06Ex10.sce | |
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Diffstat (limited to '1736/CH6/EX6.10/Ch06Ex10.sce')
-rwxr-xr-x | 1736/CH6/EX6.10/Ch06Ex10.sce | 8 |
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diff --git a/1736/CH6/EX6.10/Ch06Ex10.sce b/1736/CH6/EX6.10/Ch06Ex10.sce new file mode 100755 index 000000000..81e66ac83 --- /dev/null +++ b/1736/CH6/EX6.10/Ch06Ex10.sce @@ -0,0 +1,8 @@ +// Scilab Code Ex6.10: Page-200 (2006)
+clc; clear;
+x = 0.38; // Al concentration in host GaAs
+E_g = 1.424 + 1.266*x + 0.266*x^2; // Band gap of GaAs as a function of x, eV
+printf("\nThe energy band gap of 38 percent Al doped in GaAs = %5.3f eV", E_g);
+
+// Result
+// The energy band gap of 38 percent Al doped in GaAs = 1.943 eV
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