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+//Exa3.4

+clc;

+clear;

+close;

+// given data

+SiliconAtom=5*10^22;// unit less (Number of silicon atom)

+DonorImpurity=1/10^6;

+n_i=1.45*10^10;// in cm^-3

+e=1.602*10^-19;// in C

+miu_e=1300;// taking miu_e for Si as 1300 cm^2/V-s

+// (i) Donor atom concentraion

+// Formula N_D= Number of silicon atoms/cm^3 * donor impurity

+N_D=SiliconAtom*DonorImpurity;

+disp("(i) Donor atom concentration is : "+string(N_D)+" per cm^3");

+

+// (ii) Mobile electron concentration

+n=N_D; // (approx.)

+disp("(ii) Mobile electron concentration is : "+string(n)+" per cm^3");

+

+// (iii) Hole concentration

+p=n_i^2/N_D;

+disp("(iii) Hole concentration is : "+string(p)+" /cm^3");

+

+//(iv) conductivity of doped silicon sample

+sigma=n*e*miu_e;

+disp("(iv) conductivity of doped silicon sample is : "+string(sigma)+" S/cm");

+

+rho=1/sigma;

+//(v) resistance of given semiconductor

+l=0.5;// in cm

+a=(50*10^-4)^2

+R=rho*l/a;

+disp("Resistance of give semiconductor is : "+string(R)+" ohm");

+