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authorpriyanka2015-06-24 15:03:17 +0530
committerpriyanka2015-06-24 15:03:17 +0530
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-rwxr-xr-x1514/CH7/EX7.1/ch7_1.sce18
-rwxr-xr-x1514/CH7/EX7.2/ch7_2.sce16
-rwxr-xr-x1514/CH7/EX7.3/ch7_3.sce18
-rwxr-xr-x1514/CH7/EX7.4/ch7_4.sce12
-rwxr-xr-x1514/CH7/EX7.5/ch7_5.sce12
-rwxr-xr-x1514/CH7/EX7.6/ch7_6.sce31
-rwxr-xr-x1514/CH7/EX7.7/ch7_7.sce19
-rwxr-xr-x1514/CH7/EX7.8/ch7_8.sce34
8 files changed, 160 insertions, 0 deletions
diff --git a/1514/CH7/EX7.1/ch7_1.sce b/1514/CH7/EX7.1/ch7_1.sce
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+//chapter 7
+//example 7.1
+//page 196
+clear;
+clc ;
+//given
+Vce=20; //collector to emitter voltage in volts
+T=125 ; //temperature in degreeC
+excessT=T-25;
+D=2.81*excessT; //derating in power of device in mW
+
+//maximum power dissipation in mW
+PD=310-D; //from datasheet of 2N3904
+
+//max collector current in mA
+Ic=PD/Vce;
+
+printf('maximum Ic that can be used is %.2f mA',Ic);
diff --git a/1514/CH7/EX7.2/ch7_2.sce b/1514/CH7/EX7.2/ch7_2.sce
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+//chapter 7
+//example 7.2
+//page 198
+clear;
+clc ;
+//given
+T=78;//temperature in degreeC
+PD1=115; //maximum power dissipation in W at 25 degreeC
+excessT=T-25;
+D=0.66*excessT; //derating in power of device in W
+PD=round(PD1-D); //maximum power dissipation in W at 78 degreeC
+
+Vce=[60 40 20 10]; //collector to emitter voltage in volts
+Ic=(PD./Vce);
+plot(Vce,Ic)
+xtitle('maximum PD curve','collector to emitter voltage in volts (Vce)','collector current (Ic)');
diff --git a/1514/CH7/EX7.3/ch7_3.sce b/1514/CH7/EX7.3/ch7_3.sce
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index 000000000..e1bf99a8a
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+++ b/1514/CH7/EX7.3/ch7_3.sce
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+//chapter 7
+//example 7.3
+//page 201
+clear;
+clc ;
+//given
+thetaJC=1; //junction to case thermal impedance in degreeC/W
+Tj=90; //junction temperature
+Ta=25; // ambient temperature
+
+Vce=25;//collector to emitter voltage in volts
+Ic=1;//collector current in A
+Q=Vce*Ic; //transistor power dissipation in W
+
+thetaCA=(Tj-Ta)/Q-thetaJC; //case to air thermal impedance (thetaCS+thetaCA)
+
+printf('thetaCA=%.1f degreeC/W',thetaCA)
+disp("Choose small and least expensive heat sink i.e. NC-421")
diff --git a/1514/CH7/EX7.4/ch7_4.sce b/1514/CH7/EX7.4/ch7_4.sce
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+//chapter 7
+//example 7.4
+//page 203
+clear all;
+clc ;
+//given
+P1=50; //output power when signal frequency is 5khz in mW
+P2=25; //output power when signal frequency is 25khz in mW
+
+//change in output power in decibel
+P=10* log10(P2/P1)
+printf('change in output power in decibel=%d dB',P);
diff --git a/1514/CH7/EX7.5/ch7_5.sce b/1514/CH7/EX7.5/ch7_5.sce
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index 000000000..ccd79141e
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+//chapter 7
+//example 7.5
+//page 203
+clear all;
+clc ;
+//given
+V1=1; //output voltage when signal frequency is 5khz in V
+V2=0.707; //output voltage when signal frequency is 20khz in V
+
+//change in output voltage in decibel
+P=20* log10(V2/V1)
+printf('change in output power in decibel=%d dB',P);
diff --git a/1514/CH7/EX7.6/ch7_6.sce b/1514/CH7/EX7.6/ch7_6.sce
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index 000000000..04682be41
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+++ b/1514/CH7/EX7.6/ch7_6.sce
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+//chapter 7
+//example 7.6
+//page 206
+clear;
+clc ;
+//given
+fab=5; //common base cutoff frequency in MHz
+hfe=50; //common emitter current gain
+Cs=100; //load capacitor in pF
+Rc1=10;
+Rc2=100; //collector capacitor in Kohm
+
+//case 1
+fae=fab/hfe*10^3; //common emitter cutoff frequency in KHz
+//signal frequency
+fs1=(1/(2*%pi*Cs*Rc1)*10^6);
+if fae<fs1 then
+f2=fae;
+else
+ f2=fs1;
+end
+printf('\nupper 3dB point for Rc1 is %d kHz',f2);
+
+//case 2
+fs2=(1/(2*%pi*Cs*Rc2)*10^6);
+if fae<fs2 then
+ f2=fae;
+else
+ f2=fs2;
+end
+printf('\nupper 3dB point for Rc2 is %.1f kHz',f2);
diff --git a/1514/CH7/EX7.7/ch7_7.sce b/1514/CH7/EX7.7/ch7_7.sce
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index 000000000..9219c6624
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+//chapter 7
+//example 7.7
+//page 208
+clear;
+clc ;
+//given
+hfe=75;//forward current gain
+hie=2;// input resistance in kohm
+Rc=5;//collector resistance in kohm
+Ccb=4; //capacitance between collector and base
+Cbe=10;//capacitance between base and emitter
+
+//gain
+Av=ceil(hfe*Rc/hie);
+
+//input capacitance
+Cin=Cbe+(1+Av)*Ccb; //in pF
+
+printf('input capacitance is %d pF',Cin);
diff --git a/1514/CH7/EX7.8/ch7_8.sce b/1514/CH7/EX7.8/ch7_8.sce
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+//chapter 7
+//example 7.1
+//page 196
+clear;
+clc ;
+//given
+Vce=5;//collector to emitter voltage in volts
+Ic=5;//collector current in microA
+Rg=50;//total noise generating resistance in ohm
+Ri=25;//i/p resistance in kohm
+NF=1; //noise figure in dB
+//noise factor
+F=10^(NF/10);
+Av=30;//gain
+//rms noise voltage
+K=1.37*10^-23;//boltzman's constant J/K
+T=298;//absolute temperature in kelvin
+B=9;//circuit bandwidth in Hz
+
+en=sqrt(4*K*T*B*Rg*10^6)*10^6//in microV
+
+//i/p noise
+eni=en*Ri/(Ri+Rg)
+
+//output noise
+eno=round(Av*eni);
+
+//total rms noise output voltage
+Vn=sqrt(F*eno^2);
+
+printf('total rms noise output voltage is %.1f microV',Vn);
+
+
+