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authorpriyanka2015-06-24 15:03:17 +0530
committerpriyanka2015-06-24 15:03:17 +0530
commitb1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (patch)
treeab291cffc65280e58ac82470ba63fbcca7805165 /135/CH7
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Diffstat (limited to '135/CH7')
-rwxr-xr-x135/CH7/EX7.1/7_1.JPGbin0 -> 24381 bytes
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-rwxr-xr-x135/CH7/EX7.2/EX2.sce19
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diff --git a/135/CH7/EX7.1/7_1.JPG b/135/CH7/EX7.1/7_1.JPG
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diff --git a/135/CH7/EX7.1/EX1.sce b/135/CH7/EX7.1/EX1.sce
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+// Example 7.1: Transfer curve
+clc, clear
+IDSS=12; // in mili-amperes
+VP=-5; // in volts
+// Plotting transfer curve
+VGS=[0:-0.01:VP]; // Gate source voltage in volts
+// Using Shockley's equation
+ID=IDSS*(1-VGS/VP)^2; // Drain current in mili-amperes
+plot(VGS,ID);
+xtitle("Transfer Curve","VGS (V)","ID (mA)"); \ No newline at end of file
diff --git a/135/CH7/EX7.2/EX2.sce b/135/CH7/EX7.2/EX2.sce
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+// Example 7.2: (a) Region of operation
+// (b) Region of operation
+// (c) Region of operation
+clc, clear
+VT=2; // in volts
+VGS=3; // in volts
+disp(VGS-VT,"VGS - VT (V)");
+
+disp("Part (a)");
+disp(0.5,"VDS (V) =");
+disp("Since VDS < VGS - VT, therefore transistor is in ohmic region.");
+
+disp("Part (b)");
+disp(1,"VDS (V) =");
+disp("Since VDS = VGS - VT, therefore transistor is in saturation region.");
+
+disp("Part (c)");
+disp(5,"VDS (V) =");
+disp("Since VDS > VGS - VT, therefore transistor is in saturation region."); \ No newline at end of file
diff --git a/135/CH7/EX7.3/EX3.sce b/135/CH7/EX7.3/EX3.sce
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+// Example 7.3: IDQ, VDSQ
+clc, clear
+IDSS=12; // in mili-amperes
+VP=-4; // in volts
+// From Fig. 7.28
+VDD=12; // in volts
+RD=1.2; // in kilo-ohms
+// Since IG=0
+VGS=-1.5; // in volts
+// Using Shockley's equation
+ID=IDSS*(1-VGS/VP)^2; // Drain current in mili-amperes
+VDS=VDD-ID*RD; // in volts
+disp(ID,"IDQ (mA) =");
+disp(VDS,"VDSQ (V) ="); \ No newline at end of file
diff --git a/135/CH7/EX7.4/7_4.JPG b/135/CH7/EX7.4/7_4.JPG
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diff --git a/135/CH7/EX7.4/EX4.sce b/135/CH7/EX7.4/EX4.sce
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+// Example 7.4: VDSQ, IDSQ, VD, VS
+clc, clear
+IDSS=6e-3; // in amperes
+VP=-6; // in volts
+// From Fig. 7.31
+VDD=12; // in volts
+RD=2.2e3; // in ohms
+RS=1.6e3; // in ohms
+// Plotting transfer characteristics
+VGS=[0:-0.01:VP]; // Gate source voltage in volts
+// Using Shockley's equation
+ID=IDSS*(1-VGS/VP)^2; // Drain current in amperes
+ID=ID*1e3; // Drain current in mili-amperes
+plot(VGS,ID);
+xtitle("Transfer Characteristics","VGS (V)","ID (mA)");
+// Plotting bias line
+// From gate source circuit
+ID=-VGS/RS; // Source current in amperes
+ID=ID*1e3; // Source current in mili-amperes
+plot(VGS,ID,"RED");
+// Intersection of transfer characteristics with the bias curve
+// Putting VGS = -ID*RS in Shockley's equation and solving, we get ID^2*RS^2 + (2*RS*VP - VP^2/IDSS)*ID + VP^2
+// Solving the equation
+p_eq = poly([VP^2 (2*RS*VP-VP^2/IDSS) RS^2],"x","coeff");
+p_roots= roots(p_eq);
+IDQ=p_roots(1); // in amperes
+// Writing the KVL for the output loop
+VDSQ=VDD-IDQ*(RD+RS); // in volts
+VS=IDQ*RS; // in volts
+VD=VDSQ+VS; // in volts
+IDQ=IDQ*1e3; // in mili-amperes
+disp(VDSQ,"VDSQ (V) =");
+disp(IDQ,"IDQ (mA) =");
+disp(VD,"VD (V) =");
+disp(VS,"VS (V) ="); \ No newline at end of file
diff --git a/135/CH7/EX7.5/7_5.JPG b/135/CH7/EX7.5/7_5.JPG
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diff --git a/135/CH7/EX7.5/EX5.sce b/135/CH7/EX7.5/EX5.sce
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+// Example 7.5: Operating point
+clc, clear
+VP=-5; // in volts
+IDSS=12e-3; // in amperes
+// From Fig. 7.34(a)
+VDD=18; // in volts
+R1=400; // in kilo-ohms
+R2=90; // in kilo-ohms
+RD=2e3; // in ohms
+RS=2e3; // in ohms
+// Applying Thevnin's theorem to obtain simplified circuit in Fig. 7.34(b)
+VGG=VDD*R2/(R1+R2); // in volts
+// Plotting transfer characteristics
+VGS=[VGG:-0.01:VP]; // Gate source voltage in volts
+// Using Shockley's equation
+ID=IDSS*(1-VGS/VP)^2; // Drain current in amperes
+ID=ID*1e3; // Drain current in mili-amperes
+plot2d(VGS,ID,rect=[-5,0,3,12]);
+xtitle("Transfer Characteristics","VGS (V)","ID (mA)");
+// Plotting bias line
+// From the KVL for the gate-loop
+ID=(-VGS+VGG)/RS; // Source current in amperes
+ID=ID*1e3; // Source current in mili-amperes
+plot(VGS,ID,"RED");
+// Intersection of transfer curve with the bias curve
+// Putting VGS = VGG-ID*RS in Shockley's equation and solving, we get
+// ID^2*RS^2 + (2*RS*VP - 2*VGG*RS - VP^2/IDSS)*ID + (VGG-VP)^2
+// Solving the equation
+p_eq = poly([(VGG-VP)^2 (2*RS*VP-2*VGG*RS-VP^2/IDSS) RS^2],"x","coeff");
+p_roots= roots(p_eq);
+IDQ=p_roots(1); // in amperes
+// Writing the KVL for the drain source loop
+VDSQ=VDD-IDQ*(RD+RS); // in volts
+IDQ=IDQ*1e3; // in mili-amperes
+disp(VDSQ,"VDSQ (V) =");
+disp(IDQ,"IDQ (mA) ="); \ No newline at end of file
diff --git a/135/CH7/EX7.6/7_6.JPG b/135/CH7/EX7.6/7_6.JPG
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+// Example 7.6: VDSQ, IDQ
+clc, clear
+ID=6e-3; // in amperes
+VGS=8; // in volts
+VT=3; // in volts
+// From Fig. 7.37(a)
+VDD=12; // in volts
+RD=2e3; // in ohms
+// Plotting transfer curve
+k=ID/(VGS-VT)^2; // in amperes per volt square
+VGS=[3:0.01:VDD]; // Gate source voltage in volts
+ID=k*(VGS-VT)^2; // Drain current in amperes ............ (i)
+ID=ID*1e3; // Drain current in mili-amperes
+plot(VGS,ID);
+xtitle("Transfer Curve","VGS (V)","ID (mA)");
+// Plotting bias line
+// From the simplified dc equivalent circuit in Fig. 7.37(b)
+VGS=[0:0.01:VDD]; // Gate source voltage in volts
+ID=(VDD-VGS)/RD; // Source current in amperes
+ID=ID*1e3; // Source current in mili-amperes
+plot(VGS,ID,"RED");
+// Intersection of transfer curve with the bias curve
+// Putting VGS = VDD-ID*RD in equation (i) and solving, we get ID^2*RD^2 + (2*RD*VT - 2*VDD*RD - 1/k)*ID + (VDD-VT)^2
+// Solving the equation
+p_eq = poly([(VDD-VT)^2 (2*RD*VT-2*VDD*RD-1/k) RD^2],"x","coeff");
+p_roots= roots(p_eq);
+IDQ=p_roots(1); // in amperes
+VGSQ=VDD-IDQ*RD; // in volts
+IDQ=IDQ*1e3; // in mili-amperes
+disp(VGSQ,"VDSQ (V) =");
+disp(IDQ,"IDQ (mA) ="); \ No newline at end of file
diff --git a/135/CH7/EX7.7/7_7.JPG b/135/CH7/EX7.7/7_7.JPG
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diff --git a/135/CH7/EX7.7/EX7.sce b/135/CH7/EX7.7/EX7.sce
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+// Example 7.7: IDQ, VDSQ, VGSQ
+clc, clear
+ID=5e-3; // in amperes
+VGS=6; // in volts
+VT=3; // in volts
+// From Fig. 7.39(a)
+VDD=24; // in volts
+R1=10; // in mega-ohms
+R2=6.8; // in mega-ohms
+RD=2.2e3; // in ohms
+RS=0.75e3; // in ohms
+// Applying Thevnin's theorem to obtain simplified circuit in Fig. 7.39(b)
+VGG=VDD*R2/(R1+R2); // in volts
+// Plotting transfer characteristics
+k=ID/(VGS-VT)^2; // in amperes per volt square
+VGS=[3:0.01:VGG]; // Gate source voltage in volts
+ID=k*(VGS-VT)^2; // Drain current in amperes ............ (i)
+ID=ID*1e3; // Drain current in mili-amperes
+plot(VGS,ID);
+xtitle("Transfer Characteristics","VGS (V)","ID (mA)");
+// Plotting bias line
+VGS=[0:0.01:VGG]; // Gate source voltage in volts
+// Writing KVL for the gate-source loop
+ID=(VGG-VGS)/RS; // Source current in amperes
+ID=ID*1e3; // Source current in mili-amperes
+plot(VGS,ID,"RED");
+// Intersection of transfer curve with the bias curve
+// Putting VGS = VGG-ID*RD in equation (i) and solving, we get ID^2*RS^2 + (2*RS*VT - 2*VGG*RS - 1/k)*ID + (VGG-VT)^2
+// Solving the equation
+p_eq = poly([(VGG-VT)^2 (2*RS*VT-2*VGG*RS-1/k) RS^2],"x","coeff");
+p_roots= roots(p_eq);
+IDQ=p_roots(1); // in amperes
+VGSQ=VGG-IDQ*RS; // in volts
+// From the output circuit
+VDSQ=VDD-IDQ*(RD+RS); // in volts
+IDQ=IDQ*1e3; // in mili-amperes
+disp(IDQ,"IDQ (mA) =");
+disp(VDSQ,"VDSQ (V) =");
+disp(VGSQ,"VGSQ (V) ="); \ No newline at end of file