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{
"metadata": {
"name": "",
"signature": "sha256:2422fd711b2fd56d40e4219a033361f9b209ac35916fbe15f9fd192288113f4c"
},
"nbformat": 3,
"nbformat_minor": 0,
"worksheets": [
{
"cells": [
{
"cell_type": "heading",
"level": 1,
"metadata": {},
"source": [
"Chapter 9:Integrated Circuit Fabrication"
]
},
{
"cell_type": "heading",
"level": 2,
"metadata": {},
"source": [
"Example 9.2,Page number 470"
]
},
{
"cell_type": "code",
"collapsed": false,
"input": [
"#Variable declaration\n",
"t=1 #thickness(mil) \n",
"e=1.6*10**-19 #charge on electron(C)\n",
"Pp=10**17 #concentration of phosphorous(atoms/cm^3)\n",
"Bn=5*10**16 #boron concentration(atoms/cm^3)\n",
"un=.135 #mobility(m^2/Vs)\n",
"\n",
"#Calculations\n",
"n=(Pp-Bn)*10**6 #net concentration(atoms/cm^3)\n",
"g=e*un*n #conductivity()\n",
"rho=10**6/(g*25) #resistivity(ohm mil)\n",
"Rs=rho/t #sheet resistance(ohm mil^2)\n",
"\n",
"#Results\n",
"print\"Sheet resistance is\",round(Rs),\"ohm(mil**2)\""
],
"language": "python",
"metadata": {},
"outputs": [
{
"output_type": "stream",
"stream": "stdout",
"text": [
"Sheet resistance is 37.0 ohm(mil**2)\n"
]
}
],
"prompt_number": 9
},
{
"cell_type": "heading",
"level": 2,
"metadata": {},
"source": [
"Example 9.3,Page number 471"
]
},
{
"cell_type": "code",
"collapsed": false,
"input": [
"#Variable declaration\n",
"R=20*10**3 #resistance of resistor(ohms)\n",
"w=25 #width(um)\n",
"Rs=200 #sheet resistance(ohm/square)\n",
"R1=5*10**3 #resistance(ohms)\n",
"\n",
"#Calculations\n",
"#Part a\n",
"l=(R*w)/Rs #length required to fabricate 20 kohms(um)\n",
"\n",
"#Part b\n",
"L=25 #length of resistor of 5 k ohms(um)\n",
"w1=(Rs*L)/R1 #width required to fabricate 5 kohms(um)\n",
"#Results\n",
"print\"length required to fabricate 20 kohms resistor is\",l,\"um\"\n",
"print\"width required to fabricate 5 kohms resistor is\",w1,\"um\""
],
"language": "python",
"metadata": {},
"outputs": [
{
"output_type": "stream",
"stream": "stdout",
"text": [
"length required to fabricate 20 kohms resistor is 2500 um\n",
"width required to fabricate 5 kohms resistor is 1 um\n"
]
}
],
"prompt_number": 2
},
{
"cell_type": "heading",
"level": 2,
"metadata": {},
"source": [
"Example 9.4,Page number 471"
]
},
{
"cell_type": "code",
"collapsed": false,
"input": [
"#Variable declaration\n",
"C=0.4*10**-12 #capacitance(pF/um^2)\n",
"A=10**-12 #area of film(m^2)\n",
"d=400*10**-10 #thickness of SiO2(amstrong)\n",
"Eo=8.849*10**-12 #absolute electrical permitivity of free space\n",
"\n",
"#Calculations\n",
"Er=(C*d)/(Eo*A) #relative dielectric constant\n",
"\n",
"#Results\n",
"print\"relative dielectric constant of SiO2 is\",round(Er),\"(Solution given in the textbook is incorrect)\""
],
"language": "python",
"metadata": {},
"outputs": [
{
"output_type": "stream",
"stream": "stdout",
"text": [
"relative dielectric constant of SiO2 is 1808.0 (Solution given in the textbook is incorrect)\n"
]
}
],
"prompt_number": 2
},
{
"cell_type": "heading",
"level": 2,
"metadata": {},
"source": [
"Example 9.5,Page number 471"
]
},
{
"cell_type": "code",
"collapsed": false,
"input": [
"#Variable declaration\n",
"C=250*10**-12 #capacitance(pF)\n",
"d=500*10**-10 #thickness of SiO2 layer(amstrong)\n",
"Eo=8.849*10**-12 #absolute electrical permitivity of free space\n",
"Er=3.5 #relative dielectric constant\n",
"\n",
"#Calculations\n",
"A=(C*d)/(Eo*Er) #chip area(um^2)\n",
"\n",
"#Results\n",
"print\"chip area needed for a 250 pF MOS capacitor\",round(A/1e-7,2),\"(um)^2(Solution given in the textbook is incorrect)\""
],
"language": "python",
"metadata": {},
"outputs": [
{
"output_type": "stream",
"stream": "stdout",
"text": [
"chip area needed for a 250 pF MOS capacitor 4.04 (um)^2(Solution given in the textbook is incorrect)\n"
]
}
],
"prompt_number": 8
}
],
"metadata": {}
}
]
}
|
