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diff --git a/Semiconductor_Devices_Basic_Principle_by_J._Singh/chapter8.ipynb b/Semiconductor_Devices_Basic_Principle_by_J._Singh/chapter8.ipynb deleted file mode 100755 index dab318d1..00000000 --- a/Semiconductor_Devices_Basic_Principle_by_J._Singh/chapter8.ipynb +++ /dev/null @@ -1,473 +0,0 @@ -{
- "metadata": {
- "name": "",
- "signature": "sha256:6e318f0f515b2df1396cf49fa3f9877662336f268be595bba389bbb595cdcca4"
- },
- "nbformat": 3,
- "nbformat_minor": 0,
- "worksheets": [
- {
- "cells": [
- {
- "cell_type": "heading",
- "level": 1,
- "metadata": {},
- "source": [
- "Chapter8:FIELD EFFECT TRANSISTORS:JFET/MESFET"
- ]
- },
- {
- "cell_type": "heading",
- "level": 2,
- "metadata": {},
- "source": [
- "Ex8.1:pg-342"
- ]
- },
- {
- "cell_type": "code",
- "collapsed": false,
- "input": [
- "ni = 1.5*10**10\n",
- "Na = 10**18\n",
- "Nd = 10**17\n",
- "kBT=0.026\n",
- "e = 1.6*10**-19\n",
- "Vbi= (kBT)*((log((Na*Nd)/ni**2)))\n",
- "print\"The built in voltage of a p+n diode is ,Vbi=\",\"{:.2e}\".format(Vbi),\"V\"\n",
- "h=.25*10**-4\n",
- "apsilen = 11.9*8.85*10**-14\n",
- "Vp= (e*(h**2)*Nd)/(2*apsilen)\n",
- "print\"The total volage drop required to pinch the channel is ,Vp= \",\"{:.2e}\".format(Vp),\"V\"\n",
- "VG= Vbi-Vp\n",
- "print\"The pinch off at gate bias is ,VG= \",\"{:.2e}\".format(VG),\"V\"\n",
- "# Note : due to different precisions taken by me and the author ... my answer differ \n",
- "\n"
- ],
- "language": "python",
- "metadata": {},
- "outputs": [
- {
- "output_type": "stream",
- "stream": "stdout",
- "text": [
- "The built in voltage of a p+n diode is ,Vbi= 8.77e-01 V\n",
- "The total volage drop required to pinch the channel is ,Vp= 4.75e+00 V\n",
- "The pinch off at gate bias is ,VG= -3.87e+00 V\n"
- ]
- }
- ],
- "prompt_number": 1
- },
- {
- "cell_type": "heading",
- "level": 2,
- "metadata": {},
- "source": [
- "\n",
- "Ex8.2:pg-342"
- ]
- },
- {
- "cell_type": "code",
- "collapsed": false,
- "input": [
- "phi_b=0.8\n",
- "T=300.0\n",
- "kBT=0.026\n",
- "R_star=8.0\n",
- "Dp=20.0\n",
- "pn = 3.38*10**-5\n",
- "e = 1.6*10**-19\n",
- "Lp=1*10**-4\n",
- "# for Schottky case Js = R_star*T**2*(exp(-(phi_b)/(kBT)))\n",
- "Js = R_star*T**2*(exp(-(phi_b)/(kBT)))\n",
- "print\"The gate current density is ,Js =\",\"{:.2e}\".format(Js),\"A/cm**2\"\n",
- "# from p-n diode theory Jo = (e*Dp*pn)/(Lp)\n",
- "Jo = (e*Dp*pn)/(Lp)\n",
- "print\"The gate current density is ,Jo =\",\"{:.2e}\".format(Jo),\"A/cm**2\"\n"
- ],
- "language": "python",
- "metadata": {},
- "outputs": [
- {
- "output_type": "stream",
- "stream": "stdout",
- "text": [
- "The gate current density is ,Js = 3.12e-08 A/cm**2\n",
- "The gate current density is ,Jo = 1.08e-18 A/cm**2\n"
- ]
- }
- ],
- "prompt_number": 3
- },
- {
- "cell_type": "heading",
- "level": 2,
- "metadata": {},
- "source": [
- "Ex8.3:pg-349"
- ]
- },
- {
- "cell_type": "code",
- "collapsed": false,
- "input": [
- "ni = 1.5*10**10\n",
- "Nc = 4.45*10**17\n",
- "Nd = 10**17\n",
- "kBT=0.026\n",
- "e = 1.6*10**-19\n",
- "h=0.25*10**-4\n",
- "apsilen = 13.2*8.85*10**-14\n",
- "Vh = 0.8\n",
- "Vp= (e*(h**2)*Nd)/(2*apsilen)\n",
- "print\"The total volage drop required to pinch the channel is ,Vp= \",round(Vp,1),\"V\"\n",
- "Ecf= -(kBT)*(log(Nd/Nc))\n",
- "print\"The difference between the conduction band and fermi level is ,Ecf=\",\"{:.2e}\".format(Vbi),\"V\"\n",
- "Vbi= Vh-Ecf\n",
- "print\"The built in potential is ,Vbi= \",\"{:.2e}\".format(Vbi),\"V\"\n",
- "VGS= Vbi-Vp\n",
- "print\"The pinch off at gate bias is ,VT=\",round(VGS,1),\"V\"\n",
- "\n"
- ],
- "language": "python",
- "metadata": {},
- "outputs": [
- {
- "output_type": "stream",
- "stream": "stdout",
- "text": [
- "The total volage drop required to pinch the channel is ,Vp= 4.3 V\n",
- "The difference between the conduction band and fermi level is ,Ecf= 7.61e-01 V\n",
- "The built in potential is ,Vbi= 7.61e-01 V\n",
- "The pinch off at gate bias is ,VT= -3.5 V\n"
- ]
- }
- ],
- "prompt_number": 6
- },
- {
- "cell_type": "heading",
- "level": 2,
- "metadata": {},
- "source": [
- "Ex8.4:pg-350"
- ]
- },
- {
- "cell_type": "code",
- "collapsed": false,
- "input": [
- "Nd = 10**17\n",
- "e = 1.6*10**-19\n",
- "apsilen = 13.1*8.85*10**-14\n",
- "Vbi = 0.76\n",
- "h= sqrt((2*apsilen*Vbi)/(e*Nd))\n",
- "print\"The thickness at which the value of Vp is same at Vbi is ,h=\",\"{:.1e}\".format(h),\"cm\""
- ],
- "language": "python",
- "metadata": {},
- "outputs": [
- {
- "output_type": "stream",
- "stream": "stdout",
- "text": [
- "The thickness at which the value of Vp is same at Vbi is ,h= 1.0e-05 cm\n"
- ]
- }
- ],
- "prompt_number": 8
- },
- {
- "cell_type": "heading",
- "level": 2,
- "metadata": {},
- "source": [
- "\n",
- "Ex8.5:pg-350"
- ]
- },
- {
- "cell_type": "code",
- "collapsed": false,
- "input": [
- "Nc = 4.45*10**17\n",
- "Nd = 10**17\n",
- "kBT=0.026\n",
- "e = 1.6*10**-19\n",
- "h=0.06*10**-4\n",
- "apsilen = 13.2*8.85*10**-14\n",
- "Vh = 0.8\n",
- "Vp= (e*(h**2)*Nd)/(2*apsilen)\n",
- "print\"The total volage drop required to pinch the channel is ,Vp=\",\"{:.1e}\".format(Vp),\"V\"\n",
- "Ecf= -(kBT)*(log(Nd/Nc))\n",
- "print\"The difference between the conduction band and fermi level is ,Ecf=\",\"{:.2e}\".format(Ecf),\"V\"\n",
- "Vbi= Vh-Ecf\n",
- "print\"The built in potential is ,Vbi=\",\"{:.2e}\".format(Vbi),\"V\"\n",
- "VG= Vbi-Vp\n",
- "print\"The pinch off at gate bias is ,VG=\",\"{:.2e}\".format(VG),\"V\""
- ],
- "language": "python",
- "metadata": {},
- "outputs": [
- {
- "output_type": "stream",
- "stream": "stdout",
- "text": [
- "The total volage drop required to pinch the channel is ,Vp= 2.5e-01 V\n",
- "The difference between the conduction band and fermi level is ,Ecf= 3.88e-02 V\n",
- "The built in potential is ,Vbi= 7.61e-01 V\n",
- "The pinch off at gate bias is ,VG= 5.15e-01 V\n"
- ]
- }
- ],
- "prompt_number": 10
- },
- {
- "cell_type": "heading",
- "level": 2,
- "metadata": {},
- "source": [
- "Ex8.6:pg-351"
- ]
- },
- {
- "cell_type": "code",
- "collapsed": false,
- "input": [
- "mu_n=6000\n",
- "phi_b=0.8\n",
- "kBT=0.026\n",
- "e = 1.6*10**-19\n",
- "h=0.25*10**-4\n",
- "Nd = 5*10**16\n",
- "Nc = 4.45*10**17\n",
- "L = 2*10**-4\n",
- "Z = 25*10**-4\n",
- "apsilen = 13.2*8.85*10**-14\n",
- "VGS1 = 0\n",
- "VGS2 = -1\n",
- "Vbi = (phi_b-(kBT*(log(Nc/Nd))))\n",
- "print\"The built-in voltage is ,Vbi =\",\"{:.2e}\".format(Vbi),\"V\"\n",
- "Vp= (e*(h**2)*Nd)/(2*apsilen)\n",
- "print\"The internal pinch off potential is ,Vp=\",round(Vp,2),\"V\"\n",
- "go=(e*mu_n*Nd*Z*h)/(L)\n",
- "print\"The value of go of the channel is ,go=\",\"{:.2e}\".format(go),\"ohm**-1\"\n",
- "ID_sat = go*((Vp/3)-Vbi+((2*(Vbi**1.5))/(3*(Vp**.5))))\n",
- "print\"The value of saturation voltage is ,ID_sat =\",\"{:.2e}\".format(ID_sat),\"V\"\n",
- "ID1 = go*((Vp/3)-Vbi+VGS2+((2*((Vbi+abs(VGS2))**1.5))/(3*(Vp**.5))))\n",
- "print\"The value of saturation current at VGS1 is ,ID(sat) =\",\"{:.2e}\".format(ID1),\"A\"\n",
- "gm_sat= go*(1-((Vbi/Vp)**.5))\n",
- "print\"The value of saturation conductance at VGS1 is ,gm_sat=\",\"{:.1e}\".format(gm_sat),\"S\"\n",
- "gm_sat= go*(1-((((Vbi+abs(VGS2))/Vp)**.5)))\n",
- "print\"The value of saturation conductance at VGS2 is ,gm_sat=\",\"{:.2e}\".format(gm_sat),\"S\"\n",
- "# Note : due to different precisions taken by me and the author ... my answer differ \n"
- ],
- "language": "python",
- "metadata": {},
- "outputs": [
- {
- "output_type": "stream",
- "stream": "stdout",
- "text": [
- "The built-in voltage is ,Vbi = 7.43e-01 V\n",
- "The internal pinch off potential is ,Vp= 2.14 V\n",
- "The value of go of the channel is ,go= 1.50e-02 ohm**-1\n",
- "The value of saturation voltage is ,ID_sat = 3.93e-03 V\n",
- "The value of saturation current at VGS1 is ,ID(sat) = 2.85e-04 A\n",
- "The value of saturation conductance at VGS1 is ,gm_sat= 6.2e-03 S\n",
- "The value of saturation conductance at VGS2 is ,gm_sat= 1.46e-03 S\n"
- ]
- }
- ],
- "prompt_number": 8
- },
- {
- "cell_type": "heading",
- "level": 2,
- "metadata": {},
- "source": [
- "\n",
- "Ex8.7:pg-354"
- ]
- },
- {
- "cell_type": "code",
- "collapsed": false,
- "input": [
- "Nd = 5*10**16\n",
- "L = 2*10**-4\n",
- "apsilen = 13.2*8.85*10**-14\n",
- "VDS1 = 1.0\n",
- "VDS2 = 1.5\n",
- "VGS1 = 0\n",
- "ID=4.03\n",
- "dL1 = sqrt((2*apsilen*VDS1)/(e*Nd))\n",
- "print\"The change in channel length is ,dL (VDS(sat)+1 V) =\",\"{:.2e}\".format(dL1),\"cm\"\n",
- "dL2 = sqrt((2*apsilen*VDS2)/(e*Nd))\n",
- "print\"The change in channel length is ,dL (VDS(sat)+1.5 V) =\",\"{:.1e}\".format(dL2),\"cm\"\n",
- "ID1 = ID*(1+(dL1/(2*L)))\n",
- "print\"The current at the bias is ,ID1(VDS(sat)+1 V) =\",round(ID1,2),\"mA\"\n",
- "ID2 = ID*(1+(dL2/(2*L)))\n",
- "print\"The current at the bias is ,ID2(VDS(sat)+1.5 V) =\",round(ID2,2),\"mA\"\n",
- "rDS = (VDS2-VDS1)/((ID2-ID1)*10**-3)\n",
- "print\"The output resistance of source drain channel is ,rDS =\",\"{:.2e}\".format(rDS),\"ohm\"\n",
- "# Note : due to different precisions taken by me and the author ... my answer differ "
- ],
- "language": "python",
- "metadata": {},
- "outputs": [
- {
- "output_type": "stream",
- "stream": "stdout",
- "text": [
- "The change in channel length is ,dL (VDS(sat)+1 V) = 1.71e-05 cm\n",
- "The change in channel length is ,dL (VDS(sat)+1.5 V) = 2.1e-05 cm\n",
- "The current at the bias is ,ID1(VDS(sat)+1 V) = 4.2 mA\n",
- "The current at the bias is ,ID2(VDS(sat)+1.5 V) = 4.24 mA\n",
- "The output resistance of source drain channel is ,rDS = 1.29e+04 ohm\n"
- ]
- }
- ],
- "prompt_number": 7
- },
- {
- "cell_type": "heading",
- "level": 2,
- "metadata": {},
- "source": [
- "Ex8.8:pg-361"
- ]
- },
- {
- "cell_type": "code",
- "collapsed": false,
- "input": [
- "mu_n=1000\n",
- "e = 1.6*10**-19\n",
- "h=0.5*10**-4\n",
- "Nd = 10**16\n",
- "L = 2*10**-4\n",
- "apsilen = 11.9*8.85*10**-14\n",
- "Vs = 10**7\n",
- "fT = (e*mu_n*Nd*(h**2))/(2*math.pi*apsilen*(L**2))\n",
- "print\"The maximum cutoff frequency of the device in the constant mobility model is ,fT =\",\"{:.2e}\".format(fT),\"Hz\"\n",
- "fT = Vs/(2*math.pi*L)\n",
- "print\"The maximum cutoff frequency of the device in the saturation velocity model is fT =\",\"{:.2e}\".format(fT),\"Hz\"\n"
- ],
- "language": "python",
- "metadata": {},
- "outputs": [
- {
- "output_type": "stream",
- "stream": "stdout",
- "text": [
- "The maximum cutoff frequency of the device in the constant mobility model is ,fT = 1.51e+10 Hz\n",
- "The maximum cutoff frequency of the device in the saturation velocity model is fT = 7.96e+09 Hz\n"
- ]
- }
- ],
- "prompt_number": 11
- },
- {
- "cell_type": "heading",
- "level": 2,
- "metadata": {},
- "source": [
- "Ex8.9:pg-361"
- ]
- },
- {
- "cell_type": "code",
- "collapsed": false,
- "input": [
- "VDS =0.5\n",
- "h=1*10**-4\n",
- "ID=4.03\n",
- "F = VDS/h\n",
- "print\"The electric field in channel is ,F =\",\"{:.2e}\".format(F),\"V/cm\"\n",
- "Vsi = 5*10**6\n",
- "VGaAs = 10**7\n",
- "Ttr1 = h/Vsi \n",
- "print\"The transit time of electrons in silicon is ,Ttr(si) = \",\"{:.2e}\".format(Ttr1),\"s\"\n",
- "Ttr2 = h/VGaAs \n",
- "print\"The transit time of electrons in GaAs is ,Ttr(GaAs) =\",\"{:.2e}\".format(Ttr2),\"s\"\n",
- "fT1 = 1.0/(2*math.pi*Ttr1)\n",
- "print\"The corresponding frequency of silicon is ,fT(Si) =\",\"{:.2e}\".format(fT1),\"Hz\"\n",
- "fT2 = 1.0/(2*math.pi*Ttr2)\n",
- "print\"The corresponding frequency of GaAs is ,fT(GaAs) =\",\"{:.2e}\".format(fT2),\"Hz\"\n",
- "\n"
- ],
- "language": "python",
- "metadata": {},
- "outputs": [
- {
- "output_type": "stream",
- "stream": "stdout",
- "text": [
- "The electric field in channel is ,F = 5.00e+03 V/cm\n",
- "The transit time of electrons in silicon is ,Ttr(si) = 2.00e-11 s\n",
- "The transit time of electrons in GaAs is ,Ttr(GaAs) = 1.00e-11 s\n",
- "The corresponding frequency of silicon is ,fT(Si) = 7.96e+09 Hz\n",
- "The corresponding frequency of GaAs is ,fT(GaAs) = 1.59e+10 Hz\n"
- ]
- }
- ],
- "prompt_number": 13
- },
- {
- "cell_type": "heading",
- "level": 2,
- "metadata": {},
- "source": [
- "Ex8.10:pg-361"
- ]
- },
- {
- "cell_type": "code",
- "collapsed": false,
- "input": [
- "VB = 100.0\n",
- "FSi=3*10**5\n",
- "FGaAs=4*10**5\n",
- "FSiC=3*10**6\n",
- "Vsi = 10**7\n",
- "VGaAs = 10**7\n",
- "VSiC = 2*10**7\n",
- "LBSi = VB/FSi\n",
- "print\"The minimum channel length at which Si material will breakdown is ,LBSi = \",\"{:.2e}\".format(LBSi),\"cm\"\n",
- "LBGaAs = VB/FGaAs\n",
- "print\"The minimum channel length at which GaAs material will breakdown is ,LBGaAs =\",\"{:.2e}\".format(LBGaAs),\"cm\"\n",
- "LBSiC = VB/FSiC\n",
- "print\"The minimum channel length at which SiC material will breakdown is ,LBSiC =\",\"{:.2e}\".format(LBSiC),\"cm\"\n",
- "fT1 = Vsi/(2*math.pi*LBSi)\n",
- "print\"The corresponding cutoff frequency of silicon is ,fT(Si) = \",\"{:.1e}\".format(fT1),\"Hz\"\n",
- "fT2 = VGaAs/(2*math.pi*LBGaAs)\n",
- "print\"The corresponding frequency of GaAs is ,fT(GaAs) =\",\"{:.1e}\".format(fT2),\"Hz\"\n",
- "fT3 = VSiC/(2*math.pi*LBSiC)\n",
- "print\"The corresponding cutoff frequency of SiC is ,fT(SiC) =\",\"{:.2e}\".format(fT3),\"Hz\"\n"
- ],
- "language": "python",
- "metadata": {},
- "outputs": [
- {
- "output_type": "stream",
- "stream": "stdout",
- "text": [
- "The minimum channel length at which Si material will breakdown is ,LBSi = 3.33e-04 cm\n",
- "The minimum channel length at which GaAs material will breakdown is ,LBGaAs = 2.50e-04 cm\n",
- "The minimum channel length at which SiC material will breakdown is ,LBSiC = 3.33e-05 cm\n",
- "The corresponding cutoff frequency of silicon is ,fT(Si) = 4.8e+09 Hz\n",
- "The corresponding frequency of GaAs is ,fT(GaAs) = 6.4e+09 Hz\n",
- "The corresponding cutoff frequency of SiC is ,fT(SiC) = 9.55e+10 Hz\n"
- ]
- }
- ],
- "prompt_number": 17
- }
- ],
- "metadata": {}
- }
- ]
-}
\ No newline at end of file |