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diff --git a/Materials_science_and_engineering_an_introduction/CH18.ipynb b/Materials_science_and_engineering_an_introduction/CH18.ipynb new file mode 100644 index 00000000..016bfd26 --- /dev/null +++ b/Materials_science_and_engineering_an_introduction/CH18.ipynb @@ -0,0 +1,308 @@ +{
+ "metadata": {
+ "name": "CH18"
+ },
+ "nbformat": 3,
+ "nbformat_minor": 0,
+ "worksheets": [
+ {
+ "cells": [
+ {
+ "cell_type": "heading",
+ "level": 1,
+ "metadata": {},
+ "source": [
+ "Chapter 18 : Electrical Properties"
+ ]
+ },
+ {
+ "cell_type": "heading",
+ "level": 3,
+ "metadata": {},
+ "source": [
+ "Example 18.1 Page No 682"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#Computation of the Room-Temperature Intrinsic Carrier Concentration for Gallium Arsenide\n",
+ "\n",
+ "#Given\n",
+ "sigma=10**-6 # (Ohm-m)**-1 Electrical Conductivity\n",
+ "e=1.6*10**-19 #Coulomb Charge on electron\n",
+ "m_e=0.85 # m**2/V-s Mobility of electron\n",
+ "m_h=0.04 # m**2/V-s Mobility of holes\n",
+ "\n",
+ "#Calculation\n",
+ "#ni is Intrinsic carrier concentration\n",
+ "ni=sigma/(e*(m_e+m_h))\n",
+ "\n",
+ "print\"Intrinsic Carrier Concentration is\",round(ni,-11),\"m**-3\"\n",
+ "\n"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "Intrinsic Carrier Concentration is 7e+12 m**-3\n"
+ ]
+ }
+ ],
+ "prompt_number": 4
+ },
+ {
+ "cell_type": "heading",
+ "level": 3,
+ "metadata": {},
+ "source": [
+ "Example 18.2 Page No 689"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#Electrical Conductivity Determination for Intrinsic Silicon at 150\u00b0C\n",
+ "\n",
+ "#Given\n",
+ "e=1.6*10**-19 #Coulomb Charge on electron\n",
+ "ni=4*10**19 #For Si at 423 K (m**-3)\n",
+ "#Values of m_e and m_h are deduced from graphs at page No.689\n",
+ "m_e=0.06 #m**2/V-s Mobility of electron\n",
+ "m_h=0.022 #m**2/V-s Mobility of holes\n",
+ "\n",
+ "#calculation\n",
+ "#sigma is electrical conductivity\n",
+ "sigma=ni*e*(m_e+m_h)\n",
+ "\n",
+ "#result\n",
+ "print\"Electrical Conductivity is \",round(sigma,2),\"(ohm-m)**-1\"\n",
+ "\n"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "Electrical Conductivity is 0.52 (ohm-m)**-1\n"
+ ]
+ }
+ ],
+ "prompt_number": 8
+ },
+ {
+ "cell_type": "heading",
+ "level": 3,
+ "metadata": {},
+ "source": [
+ "Example 18.3 Page No 690"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#Room-Temperature for Extrinsic Silicon\n",
+ "\n",
+ "#Given (b)\n",
+ "n=10**23 #m**-3 Carrier Concentration\n",
+ "e=1.6*10**-19 #Coulomb Charge on electron\n",
+ "#From graph 18.18 m_e is calculated corresponding to n=10**23\n",
+ "m_e=0.07 #m**2/V-s Mobility of electron\n",
+ "\n",
+ "#Calculation\n",
+ "#For extrinsic n-type, the formula used is:\n",
+ "sigma=n*e*m_e\n",
+ "\n",
+ "\n",
+ "#(c)Elevated-Temperature Electrical Conductivity Calculations for Extrinsic Silicon\n",
+ "#From graph 18.19a m_e2 is calculated corresponding to 373 K\n",
+ "m_e2=0.04 #m**2/V-s Mobility of electron\n",
+ "sigma2=n*e*m_e2\n",
+ "\n",
+ "#Result\n",
+ "print\"Conductivity at n=10**23 is \",sigma,\"(Ohm-m)**-1\"\n",
+ "print\"Conductivity at T=373 K becomes \",sigma2,\"(Ohm-m)**-1\"\n",
+ "\n"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "Conductivity at n=10**23 is 1120.0 (Ohm-m)**-1\n",
+ "Conductivity at T=373 K becomes 640.0 (Ohm-m)**-1\n"
+ ]
+ }
+ ],
+ "prompt_number": 9
+ },
+ {
+ "cell_type": "heading",
+ "level": 3,
+ "metadata": {},
+ "source": [
+ "Design Example 18.1, Page No: 691"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#Specify an impurity acceptor type\n",
+ "\n",
+ "#Given\n",
+ "c=50 #ohm**-1, room temprature conductivity\n",
+ "Na1=10**22 #m**-3, assumed impurity content value\n",
+ "mu1=0.04 #m**2/Vs, assumed electrical mobility\n",
+ "e=1.6*10**-19 #Electronic charge\n",
+ "NA=6.023*10**23 #Avagadro no\n",
+ "\n",
+ "#Calculation\n",
+ "C=Na1*e*mu1 #Conductivity\n",
+ "#Decreasing an impurity content\n",
+ "Na2=10**21 #m**-3, \n",
+ "mu2=0.045 #m**2/Vs,\n",
+ "C=Na2*e*mu2\n",
+ "#So we get conductivity = 50 at\n",
+ "Na=8*10**21 \n",
+ "#For Silicon\n",
+ "rho=2.33 # g/cm**3\n",
+ "Asi=28.09 # g/mole\n",
+ "Nsi=(NA*rho*10**6)/(Asi)\n",
+ "Ca=(Na/(Na+Nsi))*100\n",
+ "\n",
+ "#Result\n",
+ "print\"The concentration of acceptor impurities is\",round(Ca,7)\n",
+ "print\"Thus a Silicon material having conductivity 50 ohm**-1 \\nmust contain\",round(Ca,7),\"% boron,aluminium,Gallium or indium .\"\n"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "The concentration of acceptor impurities is 1.6e-05\n",
+ "Thus a Silicon material having conductivity 50 ohm**-1 \n",
+ "must contain 1.6e-05 % boron,aluminium,Gallium or indium \n"
+ ]
+ }
+ ],
+ "prompt_number": 8
+ },
+ {
+ "cell_type": "heading",
+ "level": 3,
+ "metadata": {},
+ "source": [
+ "Example 18.4 Page No 693"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#Hall Voltage Computation\n",
+ "\n",
+ "#Given\n",
+ "sigma=3.8*10**7 #(Ohm-m)**-1 Electrical Conductivity\n",
+ "m_e=0.0012 #m**2/V-s Mobility of electron\n",
+ "Rh=-m_e/sigma #Hall coefficient\n",
+ "Ix=25 #Ampere(A) Current\n",
+ "d=15*10**-3 #m Thickness\n",
+ "Bz=0.6 #Tesla Magnetic field\n",
+ "\n",
+ "#Calculation\n",
+ "Vh=Rh*Ix*Bz/d\n",
+ "\n",
+ "#Result\n",
+ "print\"Hall coefficient is \",round(Rh,13),\"V-m/A-Tesla\"\n",
+ "print\"Hall Voltage is \",round(Vh,10),\"V\"\n",
+ "\n"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "Hall coefficient is -3.16e-11 V-m/A-Tesla\n",
+ "Hall Voltage is -3.16e-08 V\n"
+ ]
+ }
+ ],
+ "prompt_number": 13
+ },
+ {
+ "cell_type": "heading",
+ "level": 3,
+ "metadata": {},
+ "source": [
+ "Example 18.5 Page No 707"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#find the Capacitance \n",
+ "\n",
+ "#Given\n",
+ "A=6.45*10**-4 #m**2, area\n",
+ "d=2*10**-3 #m. Plate separation\n",
+ "V=10 #V Potential\n",
+ "Er=6 #Dielectric constant\n",
+ "Eo=8.85*10**-12 #F/m Constant dielectric constant\n",
+ "#Calculation\n",
+ "E=Er*Eo\n",
+ "C=E*A/d\n",
+ "Q=C*V\n",
+ "D=E*V/d\n",
+ "P=D-Eo*V/d\n",
+ "\n",
+ "#Result\n",
+ "print\"The Capacitance is\",round(C,13),\"F\"\n",
+ "print\"The magnitude of charge stored is \",round(Q,12),\"C\"\n",
+ "print\"The Dielectric displacement is is\",round(D,9),\"C/m**2\"\n",
+ "print\"The Polarization is\",round(P,9),\"C/m**2\"\n"
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "The Capacitance is 1.71e-11 F\n",
+ "The magnitude of charge stored is 1.71e-10 C\n",
+ "The Dielectric displacement is is 2.65e-07 C/m**2\n",
+ "The Polarization is 2.21e-07 C/m**2\n"
+ ]
+ }
+ ],
+ "prompt_number": 15
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [],
+ "language": "python",
+ "metadata": {},
+ "outputs": []
+ }
+ ],
+ "metadata": {}
+ }
+ ]
+}
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