diff options
Diffstat (limited to 'Applied_Physics_for_Engineers/Chapter_14.ipynb')
| -rwxr-xr-x | Applied_Physics_for_Engineers/Chapter_14.ipynb | 652 |
1 files changed, 652 insertions, 0 deletions
diff --git a/Applied_Physics_for_Engineers/Chapter_14.ipynb b/Applied_Physics_for_Engineers/Chapter_14.ipynb new file mode 100755 index 00000000..c52df589 --- /dev/null +++ b/Applied_Physics_for_Engineers/Chapter_14.ipynb @@ -0,0 +1,652 @@ +{ + "metadata": { + "name": "" + }, + "nbformat": 3, + "nbformat_minor": 0, + "worksheets": [ + { + "cells": [ + { + "cell_type": "heading", + "level": 1, + "metadata": {}, + "source": [ + "Chapter 14: Solid State Electronics" + ] + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.1, Page 718" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "#Variable declaration\n", + "e = 1.6e-019; # Charge on an electron, C\n", + "mu_h = 0.048; # Mobility of holes, metre square/volt-s\n", + "mu_e = 0.135; # Mobility of electrons, metre square/volt-s \n", + "\n", + "#Calculations\n", + "# For P-type semiconductor\n", + "rho_p = 1e-01; # Resistivity of P type silicon, omh-m\n", + "# As rho_p = 1/(e*N_a*mu_h), solving for N_a\n", + "N_a = 1/(e*rho_p*mu_h); # Density of acceptor atoms, per metre cube\n", + "# For N-type semiconductor\n", + "rho_n = 1e-01; # Resistivity of N type silicon, omh-m\n", + "# As rho_n = 1/(e*N_d*mu_h), solving for N_d\n", + "N_d = 1/(e*rho_n*mu_e); # Density of donor atoms, per metre cube\n", + "\n", + "#Results\n", + "print \"Density of acceptor atoms = %4.2e per metre cube\"%N_a\n", + "print \"Density of donor atoms = %4.2e per metre cube\"%N_d #incorrect answer in textbook\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "Density of acceptor atoms = 1.30e+21 per metre cube\n", + "Density of donor atoms = 4.63e+20 per metre cube\n" + ] + } + ], + "prompt_number": 1 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.2, Page 718" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "#Variable declaration\n", + "e = 1.6e-019; # Charge on an electron, C\n", + "mu_e = 0.36; # Mobility of an electron, metre square/V-s\n", + "mu_h = 0.17; # Mobility of a hole, metre square/V-s\n", + "n_i = 2.5e+018; # Intrinsic concentration of Ge sample, per metre cube\n", + "\n", + "#Calculations\n", + "sigma = e*n_i*(mu_h+mu_e); # Electrical conductivity of Ge sample, mho per metre\n", + "rho = 1/sigma; # Electrical resistivity of Ge, ohm-m\n", + "\n", + "#Results\n", + "print \"The electrical conductivity of intrinsic germanium sample = %5.3f mho/m\"%sigma\n", + "print \"The electrical resistivity of intrinsic germanium sample = %3.1f ohm-m\"%rho\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The electrical conductivity of intrinsic germanium sample = 0.212 mho/m\n", + "The electrical resistivity of intrinsic germanium sample = 4.7 ohm-m\n" + ] + } + ], + "prompt_number": 2 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.3, Page 719" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "#Variable declaration\n", + "e = 1.6e-019; # Charge on an electron, C\n", + "mu_e = 0.13; # Mobility of an electron, metre square/V-s\n", + "mu_h = 0.05; # Mobility of a hole, metre square/V-s\n", + "n_i = 1.5e+016; # Intrinsic concentration of Si, per metre cube\n", + "\n", + "#Calculations\n", + "# Pure Si\n", + "sigma = e*n_i*(mu_h+mu_e); # Electrical conductivity of Si, mho per metre\n", + "# Pure Si doped with donor impurity\n", + "n_e = 5e+028/1e+09; # Concentration of electrons, per metre cube\n", + "sigma_n = e*n_e*mu_e; # Electrical conductivity of Si doped with donor impurity, mho per metre\n", + "# Pure Si doped with acceptor impurity\n", + "n_h = 5e+028/1e+09; # Concentration of holes, per metre cube\n", + "sigma_p = e*n_h*mu_h; # Electrical conductivity of Si doped with acceptor impurity, mho per metre\n", + "\n", + "#Results\n", + "print \"The electrical conductivity of pure Si = %4.2e mho/m\"%sigma\n", + "print \"The electrical conductivity of Si doped with donor impurity = %4.2f mho/m\"%sigma_n\n", + "print \"The electrical conductivity of Si doped with acceptor impurity= %4.2f mho/m\"%sigma_p\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The electrical conductivity of pure Si = 4.32e-04 mho/m\n", + "The electrical conductivity of Si doped with donor impurity = 1.04 mho/m\n", + "The electrical conductivity of Si doped with acceptor impurity= 0.40 mho/m\n" + ] + } + ], + "prompt_number": 3 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.4, Page 720" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "from math import *\n", + "\n", + "#Variable declaration\n", + "Nd = 1; # For simplicity assume donor concentration to be unity, per metre cube\n", + "Nd_prime = 3*Nd; # Thrice the donor concentration, per metre cube\n", + "dE_CF1 = 0.5; # Energy difference between normal Fermi level and conduction level, eV\n", + "k_BT = 0.03; # Thermal energy at room temperature, eV\n", + "\n", + "#Calculations\n", + "# As Nd_prime/Nd = exp((dE_CF1 - dE_CF2))/k_BT, solving for dE_CF2\n", + "dE_CF2 = dE_CF1-k_BT*log(Nd_prime/Nd); # Energy difference between new postion of Fermi level and conduction level, eV\n", + "\n", + "#Result\n", + "print \"The new postion of Fermi level when donor concentration is trebled = %5.3f eV\"%dE_CF2\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The new postion of Fermi level when donor concentration is trebled = 0.467 eV\n" + ] + } + ], + "prompt_number": 5 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.5, Page 721" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "from math import *\n", + "\n", + "#Variable declaration\n", + "e = 1.6e-019; # Charge on an electron, C\n", + "T = 300; # Room temperature, K\n", + "J0 = 300e-03; # Saturation current density of the pn junction diode, A/metre square\n", + "J = 1e+05; # Forward current density of pn junction diode, A/metre square\n", + "k_B = 1.38e-023; # Boltzmann constant, J/K\n", + "eta = 1; # Ideality factor for Ge diode\n", + "\n", + "#Calculations\n", + "# As J = J0*exp(e*V/(eta*k_B*T)), solving for V\n", + "V = eta*k_B*T/e*log(J/J0); # Voltage required to cause a forward current density in pn junction diode, volt\n", + "\n", + "#Results\n", + "print \"The voltage required to cause a forward current density in pn junction diode = %5.3f V\"%V\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The voltage required to cause a forward current density in pn junction diode = 0.329 V\n" + ] + } + ], + "prompt_number": 6 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.6, Page 721" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "from math import *\n", + "\n", + "#Variable declaration\n", + "e = 1.6e-019; # Charge on an electron, C\n", + "T = 300; # Room temperature, K\n", + "J0 = 200e-03; # Saturation current density of the pn junction diode, A/metre square\n", + "J = 5e+04; # Forward current density of pn junction diode, A/metre square\n", + "k_B = 1.38e-023; # Boltzmann constant, J/K\n", + "eta = 1; # Ideality factor for Ge diode\n", + "\n", + "#Calculations\n", + "# As J = J0*exp(e*V/(eta*k_B*T)), solving for V\n", + "V = eta*k_B*T/e*log(J/J0); # Voltage required to cause a forward current density in pn junction diode, volt\n", + "\n", + "#Result\n", + "print \"The voltage required to cause a forward current density in pn junction diode = %5.3f V\"%V\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The voltage required to cause a forward current density in pn junction diode = 0.322 V\n" + ] + } + ], + "prompt_number": 7 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.7, Page 722" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "from math import *\n", + "\n", + "#Variable declaration\n", + "e = 1.6e-019; # Charge on an electron, C\n", + "T = 300; # Room temperature, K\n", + "J0 = 300e-03; # Saturation current density of the pn junction diode, A/metre square\n", + "J = 1e+05; # Forward current density of pn junction diode, A/metre square\n", + "k_B = 1.38e-023; # Boltzmann constant, J/K\n", + "eta = 2; # Ideality factor for Ge diode\n", + "\n", + "#Calculations\n", + "# As J = J0*exp(e*V/(eta*k_B*T)), solving for V\n", + "V = eta*k_B*T/e*log(J/J0); # Voltage required to cause a forward current density in pn junction diode, volt\n", + "\n", + "#Result\n", + "print \"The voltage required to cause a forward current density in Si iode = %5.3f V\"%V\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The voltage required to cause a forward current density in Si iode = 0.658 V\n" + ] + } + ], + "prompt_number": 8 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.8, Page 723" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "#Variable declaration\n", + "I = 55e-03; # Forward current through Si diode, A\n", + "V = 3; # Forward bias across Si diode, V\n", + "eta = 2; # Ideality factor for Si diode\n", + "\n", + "#Calculations\n", + "R_dc = V/I; # Static diode resistance, ohm\n", + "R_ac = 0.026*eta/I; # Dynamic diode resistance, ohm\n", + "\n", + "#Results\n", + "print \"The static diode resistance = %4.1f ohm\"%R_dc\n", + "print \"The dynamic diode resistance = %5.3f ohm\"%R_ac\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The static diode resistance = 54.5 ohm\n", + "The dynamic diode resistance = 0.945 ohm\n" + ] + } + ], + "prompt_number": 9 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.9, Page 723" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "from math import *\n", + "\n", + "#Variable declaration\n", + "R_L = 1000; # Load resistance across HWR, ohm\n", + "V_rms = 200; # Rms value of voltage supply, V\n", + "\n", + "#Calculations\n", + "V0 = sqrt(2)*V_rms; # Peak value of voltage, V\n", + "I0 = V0/(R_L*1e-03); # Peak value of current, mA\n", + "I_dc = I0/pi; # Average value of current, mA\n", + "I_rms = I0/2; # Rms value of current, mA\n", + "V_dc = I_dc*R_L/1e+03; # Dc output voltage, V\n", + "PIV = V0; # Peak inverse voltage, V\n", + "\n", + "#Results\n", + "print \"The average value of current = %2d mA\"%I_dc\n", + "print \"The rms value of current = %5.1f mA\"%I_rms\n", + "print \"The dc output voltage = %2d V\"%(V_dc/1)\n", + "print \"PIV = %5.1f V\"%PIV\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The average value of current = 90 mA\n", + "The rms value of current = 141.4 mA\n", + "The dc output voltage = 90 V\n", + "PIV = 282.8 V\n" + ] + } + ], + "prompt_number": 10 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.10, Page 724" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "from math import *\n", + "\n", + "#Variable declaration\n", + "R_L = 980; # Load resistance across FWR, ohm\n", + "R_F = 20.; # Internal resistance of two crystal diodes in FWR, ohm\n", + "V_rms = 50; # Rms value of voltage supply, V\n", + "\n", + "#Calculations\n", + "V0 = sqrt(2)*V_rms; # Peak value of voltage, V\n", + "I0 = V0/((R_L+R_F)*1e-03); # Peak value of current, mA\n", + "I_dc = 2*I0/pi; # Average value of current, mA\n", + "I_rms = I0/sqrt(2); # Rms value of current, mA\n", + "V_dc = I_dc*R_L/1e+03; # Dc output voltage, V\n", + "eta = 81.2/(1+R_F/R_L); # Rectification efficiency\n", + "PIV = 2*V0; # Peak inverse voltage, V\n", + "\n", + "#Results\n", + "print \"The average value of current = %2d mA\"%I_dc\n", + "print \"The rms value of current = %2d mA\"%I_rms\n", + "print \"The dc output voltage = %4.1f V\"%(V_dc/1)\n", + "print \"The rectification efficiency = %4.1f percent\"%eta\n", + "print \"PIV = %5.1f V\"%PIV\n", + "\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The average value of current = 45 mA\n", + "The rms value of current = 50 mA\n", + "The dc output voltage = 44.1 V\n", + "The rectification efficiency = 79.6 percent\n", + "PIV = 141.4 V\n" + ] + } + ], + "prompt_number": 17 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.11, Page 725" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "#Variable declaration\n", + "delta_IC = 1e-03; # Change in collector current, A\n", + "delta_IB = 50e-06; # Change in base current, A\n", + "\n", + "#Calculations\n", + "bta = delta_IC/delta_IB; # Base current amplification factor\n", + "alpha = bta/(1+bta); # Emitter current amplification factor\n", + "\n", + "#Results\n", + "print \"Alpha of BJT = %4.2f\"%alpha\n", + "print \"Beta of BJT = %2d\"%bta\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "Alpha of BJT = 0.95\n", + "Beta of BJT = 20\n" + ] + } + ], + "prompt_number": 12 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.12, Page 725" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "#Variable declaration\n", + "I_E = 2; # Emitter current, mA\n", + "alpha = 0.88; # Emitter current amplification factor\n", + "\n", + "#Calculations\n", + "I_C = alpha*I_E; # Collector current, mA\n", + "I_B = I_E - I_C; # Base current of BJT in CB mode, mA\n", + "\n", + "#Result\n", + "print \"The base current of BJT in CB mode = %4.2f mA\"%I_B\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The base current of BJT in CB mode = 0.24 mA\n" + ] + } + ], + "prompt_number": 13 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.13, Page 725" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "#Variable declaration\n", + "I_CBO = 12.5e-03; # Reverse saturation current, mA\n", + "I_E = 2; # Emitter current, mA\n", + "I_C = 1.97; # Collector current, mA\n", + "\n", + "#Calculations\n", + "# As I_C = alpha*I_E+I_CBO, solving for alpha\n", + "alpha = (I_C - I_CBO)/I_E; # Emitter current gain\n", + "I_B = I_E - I_C; # Base current, mA\n", + "\n", + "#Results\n", + "print \"The emitter current gain = %5.3f\"%alpha\n", + "print \"The base current = %4.2f mA\"%I_B\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The emitter current gain = 0.979\n", + "The base current = 0.03 mA\n" + ] + } + ], + "prompt_number": 14 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.14, Page 726" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "#Variable declaration\n", + "alpha = 0.98; # Emitter current amplification factor\n", + "I_CBO = 5e-06; # Reverse saturation current, A\n", + "\n", + "#Calculations\n", + "bta = alpha/(1-alpha); # Emitter current amplification factor\n", + "I_CEO = 1/(1-alpha)*I_CBO; # Leakage current of BJT in CE mode, mA\n", + "\n", + "#Results\n", + "print \"The base current gain = %2g\"%bta\n", + "print \"The leakage current of BJT in CE mode = %4.2f mA\"%(I_CEO/1e-03)\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The base current gain = 49\n", + "The leakage current of BJT in CE mode = 0.25 mA\n" + ] + } + ], + "prompt_number": 15 + }, + { + "cell_type": "heading", + "level": 2, + "metadata": {}, + "source": [ + "Example 14.15, Page 726" + ] + }, + { + "cell_type": "code", + "collapsed": false, + "input": [ + "#Variable declaration\n", + "R_i = 50; # Dynamic input resistance of PNP transistor, ohm\n", + "R_L = 5e+03; # Load resistance in collector circuit, ohm\n", + "alpha = 0.96; # Emitter current amplification factor\n", + "\n", + "#Calculations\n", + "A_v = alpha*R_L/R_i; # Voltage gain\n", + "A_p = alpha*A_v; # Power gain\n", + "\n", + "#Results\n", + "print \"The voltage gain = %2g\"%A_v\n", + "print \"The power gain = %2d\"%A_p\n" + ], + "language": "python", + "metadata": {}, + "outputs": [ + { + "output_type": "stream", + "stream": "stdout", + "text": [ + "The voltage gain = 96\n", + "The power gain = 92\n" + ] + } + ], + "prompt_number": 16 + } + ], + "metadata": {} + } + ] +}
\ No newline at end of file |