diff options
| author | root | 2014-07-08 14:19:49 +0530 |
|---|---|---|
| committer | root | 2014-07-08 14:19:49 +0530 |
| commit | 80751050da776de062000a7d2a5b4e045bfbc9f8 (patch) | |
| tree | 50c3d69d219cfd1376e4b7a818ec7ce14a653812 /Electronic_devices_and_circuits/chapter9.ipynb | |
| parent | 64874ad005ac7fea242828c5094fc827e7736851 (diff) | |
| download | Python-Textbook-Companions-80751050da776de062000a7d2a5b4e045bfbc9f8.tar.gz Python-Textbook-Companions-80751050da776de062000a7d2a5b4e045bfbc9f8.tar.bz2 Python-Textbook-Companions-80751050da776de062000a7d2a5b4e045bfbc9f8.zip | |
adding book
Diffstat (limited to 'Electronic_devices_and_circuits/chapter9.ipynb')
| -rwxr-xr-x | Electronic_devices_and_circuits/chapter9.ipynb | 181 |
1 files changed, 181 insertions, 0 deletions
diff --git a/Electronic_devices_and_circuits/chapter9.ipynb b/Electronic_devices_and_circuits/chapter9.ipynb new file mode 100755 index 00000000..d1e5d34b --- /dev/null +++ b/Electronic_devices_and_circuits/chapter9.ipynb @@ -0,0 +1,181 @@ +{
+ "metadata": {
+ "name": "",
+ "signature": "sha256:2422fd711b2fd56d40e4219a033361f9b209ac35916fbe15f9fd192288113f4c"
+ },
+ "nbformat": 3,
+ "nbformat_minor": 0,
+ "worksheets": [
+ {
+ "cells": [
+ {
+ "cell_type": "heading",
+ "level": 1,
+ "metadata": {},
+ "source": [
+ "Chapter 9:Integrated Circuit Fabrication"
+ ]
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 9.2,Page number 470"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#Variable declaration\n",
+ "t=1 #thickness(mil) \n",
+ "e=1.6*10**-19 #charge on electron(C)\n",
+ "Pp=10**17 #concentration of phosphorous(atoms/cm^3)\n",
+ "Bn=5*10**16 #boron concentration(atoms/cm^3)\n",
+ "un=.135 #mobility(m^2/Vs)\n",
+ "\n",
+ "#Calculations\n",
+ "n=(Pp-Bn)*10**6 #net concentration(atoms/cm^3)\n",
+ "g=e*un*n #conductivity()\n",
+ "rho=10**6/(g*25) #resistivity(ohm mil)\n",
+ "Rs=rho/t #sheet resistance(ohm mil^2)\n",
+ "\n",
+ "#Results\n",
+ "print\"Sheet resistance is\",round(Rs),\"ohm(mil**2)\""
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "Sheet resistance is 37.0 ohm(mil**2)\n"
+ ]
+ }
+ ],
+ "prompt_number": 9
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 9.3,Page number 471"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#Variable declaration\n",
+ "R=20*10**3 #resistance of resistor(ohms)\n",
+ "w=25 #width(um)\n",
+ "Rs=200 #sheet resistance(ohm/square)\n",
+ "R1=5*10**3 #resistance(ohms)\n",
+ "\n",
+ "#Calculations\n",
+ "#Part a\n",
+ "l=(R*w)/Rs #length required to fabricate 20 kohms(um)\n",
+ "\n",
+ "#Part b\n",
+ "L=25 #length of resistor of 5 k ohms(um)\n",
+ "w1=(Rs*L)/R1 #width required to fabricate 5 kohms(um)\n",
+ "#Results\n",
+ "print\"length required to fabricate 20 kohms resistor is\",l,\"um\"\n",
+ "print\"width required to fabricate 5 kohms resistor is\",w1,\"um\""
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "length required to fabricate 20 kohms resistor is 2500 um\n",
+ "width required to fabricate 5 kohms resistor is 1 um\n"
+ ]
+ }
+ ],
+ "prompt_number": 2
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 9.4,Page number 471"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#Variable declaration\n",
+ "C=0.4*10**-12 #capacitance(pF/um^2)\n",
+ "A=10**-12 #area of film(m^2)\n",
+ "d=400*10**-10 #thickness of SiO2(amstrong)\n",
+ "Eo=8.849*10**-12 #absolute electrical permitivity of free space\n",
+ "\n",
+ "#Calculations\n",
+ "Er=(C*d)/(Eo*A) #relative dielectric constant\n",
+ "\n",
+ "#Results\n",
+ "print\"relative dielectric constant of SiO2 is\",round(Er),\"(Solution given in the textbook is incorrect)\""
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "relative dielectric constant of SiO2 is 1808.0 (Solution given in the textbook is incorrect)\n"
+ ]
+ }
+ ],
+ "prompt_number": 2
+ },
+ {
+ "cell_type": "heading",
+ "level": 2,
+ "metadata": {},
+ "source": [
+ "Example 9.5,Page number 471"
+ ]
+ },
+ {
+ "cell_type": "code",
+ "collapsed": false,
+ "input": [
+ "#Variable declaration\n",
+ "C=250*10**-12 #capacitance(pF)\n",
+ "d=500*10**-10 #thickness of SiO2 layer(amstrong)\n",
+ "Eo=8.849*10**-12 #absolute electrical permitivity of free space\n",
+ "Er=3.5 #relative dielectric constant\n",
+ "\n",
+ "#Calculations\n",
+ "A=(C*d)/(Eo*Er) #chip area(um^2)\n",
+ "\n",
+ "#Results\n",
+ "print\"chip area needed for a 250 pF MOS capacitor\",round(A/1e-7,2),\"(um)^2(Solution given in the textbook is incorrect)\""
+ ],
+ "language": "python",
+ "metadata": {},
+ "outputs": [
+ {
+ "output_type": "stream",
+ "stream": "stdout",
+ "text": [
+ "chip area needed for a 250 pF MOS capacitor 4.04 (um)^2(Solution given in the textbook is incorrect)\n"
+ ]
+ }
+ ],
+ "prompt_number": 8
+ }
+ ],
+ "metadata": {}
+ }
+ ]
+}
\ No newline at end of file |